In Situ Growth of a Robust 1D Capping Layer for Stable and Efficient CsPbI3 Perovskite Solar Cells Without Hole Transporter
Hailiang Wang,Yongfa Song,Zedong Lin,Weiping Li,Huicong Liu,Xiaozhen Wei,Qixian Zhang,Chunyu Lv,Liqun Zhu,Kexiang Wang,Yisha Lan,Lan Wang,Changqing Lin,Penggang Yin,Tinglu Song,Yang Bai,Qi Chen,Shihe Yang,Haining Chen
DOI: https://doi.org/10.1002/aenm.202304038
IF: 27.8
2024-01-01
Advanced Energy Materials
Abstract:CsPbI3 perovskite is a promising light absorber in perovskite solar cells (PSCs) due to its suitable bandgap (E-g) and high chemical stability, but the perovskite phase is metastable in ambient atmosphere and prone to defect formation. To enhance phase stability and reduce defects, forming a low dimensional (LD) perovskite on CsPbI3 has proved effective. However, the energy levels for most of low-conductivity LD perovskites are not very compatible with those of CsPbI3, which will impair charge separation and device performance. Herein, a new 1D perovskite (5-Azaspiro[4.4]nonan-5-ium lead triiodide, ASNPbI(3)) with compatible energy levels and a large E-g is reported as a capping layer. The p-type ASNPbI(3) forms a p-n heterojunction with n-CsPbI3 with a staggered band alignment, considerably enhancing the carrier separation. Besides, by pre-forming a ASNPbI(3) at an intermediate stage, defects are suppressed in perovskite film. Consequently, the CsPbI3 PSCs based on carbon electrode without hole transporter (C-PSCs) achieves a PCE of 18.34%, which is among the highest-reported values for inorganic C-PSCs. Furthermore, the hydrophobic ASNPbI(3) capping layer has a high thermal stability that greatly enhances perovskite phase stability. Hence, the CsPbI3 C-PSCs maintains 68% of its initial PCE after 400 h aging at 85 degrees C in a N-2 glovebox.