Abstract:Two-dimensional ferroelectrics (FEs) are promising in the miniaturization of memory devices with ultra-high-density data storage and low power consumption. However, many thiophosphate monolayers, i.e., analogs of CuInP2S6 and referred to as ABP2X6, lose ferroelectricity and instead exhibit an antiferroelectric (AFE) or paraelectric ordering. We propose to tune the AFE ABP2X6 monolayers into the FE ordering through interface engineering. The mechanism is that there are couplings between the charge polarizations of the ABP2X6 monolayers and the local dipoles as well as the induced electronic polarizations in the substrate which have a tendency to stabilize the FE ordering. We further perform first-principles calculations for CuInP2Se6 and CuCrP2S6 monolayers and their van der Waals heterostructures. We find that an AFE CuInP2Se6 monolayer becomes FE as interfaced with graphene, MoS2, and h-BN monolayers. In contrast, the CuCrP2S6 monolayer remains AFE since there is a large energy difference between the AFE and FE phases. Interfacing it with a MoTe2 monolayer induces a metal-insulator transition for the heterostructure, whereas interfacing with a polar surface MgO(111) can drive it into FE. The interfacing effect can also be used to manipulate the FE properties of ABP2X6 multilayers. We further find that the AFE-to-FE transition is electrically switchable in these systems. In particular, it is accompanied by an indirect-direct band-gap transition for the CuInP2Se6 monolayer. Our study offers an effective approach to tune the FE and electronic properties of ABP2X6 thin films for applications in electronics and optoelectronics.

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