Abstract:Thermoelectric materials carry significant promise for self-powering future generations of unattended microdevices and wearable devices. The current increased interest in such devices highlights the need for research to provide understanding of the basic material properties of thermoelectric materials, specifically in thin-film form, deposited on flexible polymer substrates. In this study, the surface topography, crystalline structure, and electrical properties of sputtered thin films of two of the most common thermoelectric materials, i.e., antimony telluride (Sb2Te3) and bismuth telluride (Bi2Te3), supported on silicon and polymer substrates were investigated. The study focuses on determining the effect of the sputtering power and underlying substrate on the crystal structure formation as well as grain size of the resulting thin film. Radiofrequency (RF) magnetron sputtering with power levels from 50 W to 200 W was used to deposit these layers on several test structures. The results demonstrate that increasing the RF sputtering power resulted in (i) an increase in the crystalline size (from 0.48 nm to 29.66 nm for Sb2Te3 and from 10.60 nm to 20.29 nm for Bi2Te3), (ii) a significant increase in the content of tellurium (Te) in the Sb2Te3 and Bi2Te3 thin films, (iii) an order-of-magnitude increase in the electrical conductivity of the Bi2Te3 thin film fabricated on silicon wafer, and (iv) a 150% increase in the Seebeck coefficient for both Bi2Te3 and Sb2Te3 samples. Furthermore, surface roughness analysis showed that deposition on polyimide substrate modestly increased the surface roughness (Ra), from 6.59 nm to 9.91 nm for Bi2Te3 and from 12.46 nm to 15.41 nm for Sb2Te3. The electrical resistivity of Bi2Te3 thin films on polyimide was found to be 2.72 × 10−3 Ω m, compared with 1.58 × 10−3 Ω m on silicon substrate, while for Sb2Te3,, the electrical resistivity on polyimide substrate increased to 580 × 10−3 Ω m as compared with 145 × 10−3 Ω m on silicon substrate. Taken together, the results of this work demonstrate that the use of high deposition power during RF sputtering of Sb2Te3 and Bi2Te3 thin films results in significant improvements in their crystallinity, conductivity, and Seebeck coefficient, which are key material properties of great importance for thermoelectric materials.

Fabrication of Bi2Te3 and Sb2Te3 Thermoelectric Thin Films using Radio Frequency Magnetron Sputtering Technique

Effects of RF Magnetron Sputtering Deposition Power on Crystallinity and Thermoelectric Properties of Antimony Telluride and Bismuth Telluride Thin Films on Flexible Substrates

Characterization of Magnetron Sputtered BiTe-Based Thermoelectric Thin Films

Optimizing the thermoelectric properties of flexible Bi[math]Sb[math]Te[math] thin films via modulating magnetron sputtering power

Deposition and Fabrication of Sputtered Bismuth Telluride and Antimony Telluride for Microscale Thermoelectric Energy Harvesters

High thermoelectric performance achieved in Bi0.4Sb1.6Te3 films with high (00l) orientation via magnetron sputtering

Research on Fabrication and Properties of Bi/Bi2O3 Lattice Compound Thermoelectric Thin Films

Fabrication of Microstructured Thermoelectric Bi2te3 Thin Films by Seed Layer Assisted Electrodeposition

In Situ Synthesis of High Thermoelectric Performance Bi2Te3 Flexible Thin Films through Thermal Diffusion Engineering

Thermoelectric Characteristics of Electrochemically Deposited Bi2te3 and Sb2te3 Thin Films of Relevance to Multilayer Preparation

Carrier concentration and orientation optimization for high performance (Sb,Bi) 2 Te 3 thermoelectric films via magnetron co-sputtering

Effects of Annealing on Thermoelectric Properties of Sb2te3 Thin Films Prepared by Radio Frequency Magnetron Sputtering

Recent advances of electrodeposition of Bi2Te3 and its thermoelectric applications in miniaturized power generation and cooling

Development of MEMS Process Compatible (Bi,Sb)2(Se,Te)3-Based Thin Films for Scalable Fabrication of Planar Micro-Thermoelectric Generators

Ultrahigh Power Factor of Sputtered Nanocrystalline N-Type Bi2Te3 Thin Film via Vacancy Defect Modulation and Ti Additives

Fabrication, micro-structure characteristics and transport properties of co-evaporated thin films of Bi2Te3 on AlN coated stainless steel foils

Synergistic Texturing and Bi/Sb‐Te Antisite Doping Secure High Thermoelectric Performance in Bi 0.5 Sb 1.5 Te 3 ‐Based Thin Films

Influence of Sputtering Power Density on the Thermoelectric and Mechanical Properties of Flexible Thermoelectric Antimony Telluride Films Deposited by DC Magnetron Sputtering

Thermoelectric Properties of Pb-doped Bismuth Telluride Thin Films Deposited by Magnetron Sputtering

Exceptional Performance of Room Temperature Sputtered Flexible Thermoelectric Thin Film Using High Target Utilisation Sputtering Technique

Recent Progress in Electrodeposition of Thermoelectric Thin Films and Nanostructures