A silicon carbide-based highly transparent passivating contact for crystalline silicon solar cells approaching efficiencies of 24%
Malte Köhler,Manuel Pomaska,Paul Procel,Rudi Santbergen,Alexandr Zamchiy,Bart Macco,Andreas Lambertz,Weiyuan Duan,Pengfei Cao,Benjamin Klingebiel,Shenghao Li,Alexander Eberst,Martina Luysberg,Kaifu Qiu,Olindo Isabella,Friedhelm Finger,Thomas Kirchartz,Uwe Rau,Kaining Ding
DOI: https://doi.org/10.1038/s41560-021-00806-9
IF: 56.7
2021-04-15
Nature Energy
Abstract:Abstract A highly transparent passivating contact (TPC) as front contact for crystalline silicon (c-Si) solar cells could in principle combine high conductivity, excellent surface passivation and high optical transparency. However, the simultaneous optimization of these features remains challenging. Here, we present a TPC consisting of a silicon-oxide tunnel layer followed by two layers of hydrogenated nanocrystalline silicon carbide (nc-SiC:H(n)) deposited at different temperatures and a sputtered indium tin oxide (ITO) layer (c-Si(n)/SiO 2 /nc-SiC:H(n)/ITO). While the wide band gap of nc-SiC:H(n) ensures high optical transparency, the double layer design enables good passivation and high conductivity translating into an improved short-circuit current density (40.87 mA cm −2 ), fill factor (80.9%) and efficiency of 23.99 ± 0.29% (certified). Additionally, this contact avoids the need for additional hydrogenation or high-temperature postdeposition annealing steps. We investigate the passivation mechanism and working principle of the TPC and provide a loss analysis based on numerical simulations outlining pathways towards conversion efficiencies of 26%.
materials science, multidisciplinary,energy & fuels