Trajectory Planning of a Novel 2-DoF High-Speed Planar Parallel Manipulator

Junfeng Hu,Xianmin Zhang,Jinqing Zhan

DOI: https://doi.org/10.1007/978-3-540-88513-9_22

2008-10-15

Abstract:

What problem does this paper attempt to address?

Titanium Carbide MXene Hole Contacts for CdTe Photovoltaics

B. Edward Sartor,Jason A. Röhr,Jason Lipton,Joel N. Duenow,Adam Goad,Juan Meng,Matthew O. Reese,André D. Taylor

DOI: https://doi.org/10.1002/solr.202200366

IF: 9.1726

2022-08-16

Solar RRL

Abstract:CdTe is a high‐efficiency thin‐film photovoltaic technology that has seen tremendous commercial success over the past decade. Yet despite the improvement of other device characteristics, the fabrication of an ohmic hole back contact layer has remained a challenge due to the high ionization potential of CdTe which limits the external potential that can be feasibly reached even as other characteristics of the device improve. MXenes, a family of 2D materials with rapidly growing scientific and commercial interest, offer a promising route to forming low‐cost, low‐barrier contacts due to their demonstrated high work function, metallic conductivity, and facile solution processing from benign solvents. Here we show that Ti3C2T x MXene films processed from an aqueous colloidal dispersion can perform as a highly efficient hole contact material for CdTe solar cells, resulting in high power‐conversion efficiencies. The role of the Schottky barrier formation in Ti3C2T x ‐contacted CdTe devices is probed, and we elucidate potential pathways for the future development of this potent combination of materials. The modularity of the expansive MXene family of materials presents a promising strategy for developing next‐generation hole contacts for CdTe solar cells. This article is protected by copyright. All rights reserved.

energy & fuels,materials science, multidisciplinary
Microstructural Passivation of Patterned Al2O3 Back Contacts on CdS/CdTe Solar Cells

Etee Kawna Roy,Ashraful Mamun,Chungho Lee,Gang Xiong,Heayoung P. Yoon

DOI: https://doi.org/10.1002/admi.202400501

IF: 5.4

2024-09-27

Advanced Materials Interfaces

Abstract:Patterned alumina back contact on cadmium telluride (CdTe) solar cells can effectively mitigate the loss of the majority carriers while retaining the passivation benefits for minority carriers. This study investigates the impact of the point‐contact geometry on cell performance. The findings imply complex local carrier dynamics in the patterned back‐contact region, closely tied to the microstructural properties of CdTe‐based solar cells. Patterned aluminum oxide (Al2O3) back contact on cadmium telluride (CdTe) solar cells can effectively mitigate the loss of the majority carriers while retaining the passivation benefits for minority carriers. This study investigates the impact of the point‐contact geometry on cell performance, where the spacing of the microholes is systematically varied at a constant microhole diameter (≈16 μm). Microhole arrays are created on an evaporated Al2O3 layer (≈30 nm) on CdTe using laser‐beam lithography and selective wet etching processes. Comparative analysis indicates a significant decrease in fill factor (FF) and short‐circuit current (ISC) when the contact fraction falls below 30%, likely due to the Al2O3 barrier impeding majority carriers. Above this fraction, FF and ISC are comparable to those of baseline CdTe cells without Al2O3. Open‐circuit voltage (VOC) shows a gradual decrease as Al2O3 coverage is reduced but exhibits a slight increase (<15 mV) when the contact fraction exceeds 30%. Cathodoluminescence (CL) characterization reveals that significantly improved radiative recombination occurs within the CdTe grain bulk with Al2O3, whereas this effect on grain boundaries is minimal. The findings imply complex local carrier dynamics in the patterned back‐contact region, closely tied to the microstructural properties of CdTe‐based solar cells.

materials science, multidisciplinary,chemistry
CdTe thin film solar cells with a SnTe buffer layer in back contact

Zeping Weng,Songsong Ma,He Zhu,Zhenyu Ye,Tianyu Shu,Jie Zhou,Xuanzhi Wu,Huizhen Wu

DOI: https://doi.org/10.1016/j.solmat.2017.12.018

IF: 6.9

2018-01-01

Solar Energy Materials and Solar Cells

Abstract:In recent years CdTe thin film solar cells (SCs) have demonstrated promising market application foreground. However, a relatively large gap between the achieved SCs efficiencies and the theoretically predicted maximum efficiency still exists. In particular, the open circuit voltage (Voc) of the CdTe thin film SCs could be further increased, which is limited by high-work-function of CdTe. In this work, p-type narrow-gap SnTe thin films are proposed as a buffer layer in the back contact of CdTe SCs. The band alignment at SnTe/CdTe interface renders a small valance band offset, which expedites hole transport from the CdTe absorber to the hole electrode and improves the Ohmic contact for CdTe. With the insertion of a SnTe single buffer layer at the back contact, a Cu-free CdTe SC has been developed, which displays the same cell efficiency as the traditional cells using CuxTe as the back contact. The Voc of cells with ZnTe: Cu/SnTe double-layer at back contact is notably higher than the CdTe SCs fabricated with CuxTe or ZnTe: Cu single-layer at the back contact. Furthermore, accretion of hole concentration is also demonstrated by the diffusion of Sn in the CdTe absorber layer. This work shows the potential to improve CdTe SCs by using a narrow-gap IV-VI compound semiconductor.
A silicon carbide-based highly transparent passivating contact for crystalline silicon solar cells approaching efficiencies of 24%

Malte Köhler,Manuel Pomaska,Paul Procel,Rudi Santbergen,Alexandr Zamchiy,Bart Macco,Andreas Lambertz,Weiyuan Duan,Pengfei Cao,Benjamin Klingebiel,Shenghao Li,Alexander Eberst,Martina Luysberg,Kaifu Qiu,Olindo Isabella,Friedhelm Finger,Thomas Kirchartz,Uwe Rau,Kaining Ding

DOI: https://doi.org/10.1038/s41560-021-00806-9

IF: 56.7

2021-04-15

Nature Energy

Abstract:Abstract A highly transparent passivating contact (TPC) as front contact for crystalline silicon (c-Si) solar cells could in principle combine high conductivity, excellent surface passivation and high optical transparency. However, the simultaneous optimization of these features remains challenging. Here, we present a TPC consisting of a silicon-oxide tunnel layer followed by two layers of hydrogenated nanocrystalline silicon carbide (nc-SiC:H(n)) deposited at different temperatures and a sputtered indium tin oxide (ITO) layer (c-Si(n)/SiO 2 /nc-SiC:H(n)/ITO). While the wide band gap of nc-SiC:H(n) ensures high optical transparency, the double layer design enables good passivation and high conductivity translating into an improved short-circuit current density (40.87 mA cm −2 ), fill factor (80.9%) and efficiency of 23.99 ± 0.29% (certified). Additionally, this contact avoids the need for additional hydrogenation or high-temperature postdeposition annealing steps. We investigate the passivation mechanism and working principle of the TPC and provide a loss analysis based on numerical simulations outlining pathways towards conversion efficiencies of 26%.

materials science, multidisciplinary,energy & fuels
Rectification and Tunneling Effects Enabled by Al2O3 Atomic Layer Deposited on Back Contact of CdTe Solar Cells

Jun Liang,Qinxian Lin,Hao Li,Yantao Su,Xiaoyang Yang,Zhongzhen Wu,Jiaxin Zheng,Xinwei Wang,Yuan Lin,Feng Pan

DOI: https://doi.org/10.1063/1.4926601

IF: 4

2015-01-01

Applied Physics Letters

Abstract:Atomic layer deposition (ALD) of Aluminum oxide (Al2O3) is employed to optimize the back contact of thin film CdTe solar cells. Al2O3 layers with a thickness of 0.5 nm to 5 nm are tested, and an improved efficiency, up to 12.1%, is found with the 1 nm Al2O3 deposition, compared with the efficiency of 10.7% without Al2O3 modification. The performance improvement stems from the surface modification that optimizes the rectification and tunneling of back contact. The current-voltage analysis indicates that the back contact with 1 nm Al2O3 maintains large tunneling leakage current and improves the filled factor of CdTe cells through the rectification effect. XPS and capacitance-voltage electrical measurement analysis show that the ALD-Al2O3 modification layer features a desired low-density of interface state of 8 × 1010 cm−2 by estimation.
Enriched Semiconducting Single Wall Nanotubes As Back Contact for CdTe Solar Cell.

Bin Li,Hang Zhou,Hui Li,Xiangxin Liu

DOI: https://doi.org/10.1109/nems.2016.7758210

2016-01-01

Abstract:For CdS/CdTe solar cells with conventional Cu doped CdTe at the back contact, the diffusion of copper into CdS window layer is detrimental to the solar cell performance. In order to obviate this problem, single wall carbon nanotube thin films with enriched semiconducting ratio (95% S-SWNT) are applied to the CdS/CdTe device and their suitability as back contact materials are studied. We achieve solar cells with power conversion efficiency (PCE) of ~9.71% device using SWNT/Au back contact. Furthermore, the device with SWNT/Au electrode shows higher thermal stability when compared to devices with Cu/Au electrodes.
Design and Fabrication of PERC-Like CdTe Solar Cells Using Micropatterned Al2O3 Layer

Etee Kawna Roy,Kaden Powell,Chungho Lee,Gang Xiong,Heayoung Yoon

DOI: https://doi.org/10.48550/arXiv.2301.09787

2023-01-24

Materials Science

Abstract:Recent studies have investigated novel strategies to further improve the limited Voc of CdTe solar cells via increased carrier lifetime and doping density of CdTe thin films. Among various metal oxides, aluminum oxide (Al2O3) is a promising passivation candidate, where the negatively charged Al2O3 layer repels the minority carrier in CdTe and Al2O3 provides a chemically passivating interface, increasing the carrier lifetime. Despite the continuing efforts, an optimized back-contact architecture to improve the Voc while maintaining high Jsc and FF is still under development. In this work, we report the design, fabrication, and characterization of PERC-like CdTe solar cells, where an Al2O3 passivation layer is patterned using laser-beam lithography. Our process enables reproducible patterning on a rough surface CdTe while maintaining the size of the array in the design. Analysis of CdTe PERC devices (As-doped) shows a notably different Voc trend compared to FF and Jsc, independent of the patterned array structures used in this study. The subsurface electronic structure of CdTe and the interplay between carrier selectivity and collection of the patterned Al2O3 could be responsible for the observed PV characteristics.
High-performance bifacial perovskite solar cells enabled by single-walled carbon nanotubes

Jing Zhang,Xian-Gang Hu,Kangyu Ji,Songru Zhao,Dongtao Liu,Bowei Li,Peng-Xiang Hou,Chang Liu,Lirong Liu,Samuel D. Stranks,Hui-Ming Cheng,S. Ravi P. Silva,Wei Zhang

DOI: https://doi.org/10.1038/s41467-024-46620-1

IF: 16.6

2024-03-12

Nature Communications

Abstract:Abstract Bifacial perovskite solar cells have shown great promise for increasing power output by capturing light from both sides. However, the suboptimal optical transmittance of back metal electrodes together with the complex fabrication process associated with front transparent conducting oxides have hindered the development of efficient bifacial PSCs. Here, we present a novel approach for bifacial perovskite devices using single-walled carbon nanotubes as both front and back electrodes. single-walled carbon nanotubes offer high transparency, conductivity, and stability, enabling bifacial PSCs with a bifaciality factor of over 98% and a power generation density of over 36%. We also fabricate flexible, all-carbon-electrode-based devices with a high power-per-weight value of 73.75 W g −1 and excellent mechanical durability. Furthermore, we show that our bifacial devices have a much lower material cost than conventional monofacial PSCs. Our work demonstrates the potential of SWCNT electrodes for efficient, stable, and low-cost bifacial perovskite photovoltaics.

multidisciplinary sciences
CIGS bifacial solar cells with novel rear architectures: Simulation point of view and the creation of a digital twin

A.F. Violas,A.J.N. Oliveira,P.A. Fernandes,P.M.P. Salomé,J.P. Teixeira

DOI: https://doi.org/10.1016/j.solmat.2024.112899

IF: 6.9

2024-05-10

Solar Energy Materials and Solar Cells

Abstract:The performance of bifacial Cu(In,Ga)Se 2 (CIGS) cells does not yet reach the one of monofacial cells, with standard Mo rear contacts. By exploring optoelectronic simulations, this study addresses the impact of a transparent conducting oxide layer used as rear contact in CIGS solar cells. These simulations, which aim to create a digital twin of bifacial CIGS solar cells, offer insight into the impact of novel rear contact architectures. It was observed that with an indium tin oxide (ITO) rear contact the CIGS cell performance lacks in comparison to a Mo one due to an electrical barrier, under rear side illumination these devices may only reach 3.9 % in conversion efficiency. The implementation of dielectric rear passivation schemes have great performance benefits in cells with Mo rear contacts. Therefore, the same passivation strategy in ITO contacts is discussed and additional novel architectures are proposed, from which a design of alternated lines between dielectric and 15 nm Mo layers on ITO showed promising results. Such rear architectures aim to achieve i) a highly transparent rear contact, ii) an ohmic-like behaviour with CIGS, and iii) a low defective interface with rear passivation. The selenization of the complete 15 nm Mo in the proposed novel architecture during the CIGS growth was considered, resulting in transmittance values above 70 % and, notably, reaching the transparency of bare ITO in the infrared range. Such rear architecture may provide for bifacial CIGS solar cells with conversion efficiency values surpassing 20 and 15 % for front and rear side illumination, respectively, allowing to fully exploit bifaciality.

materials science, multidisciplinary,physics, applied,energy & fuels
All-back-contact neutral-colored transparent crystalline silicon solar cells enabling seamless modularization

Jeonghwan Park,Kangmin Lee,Jungtaek Lee,Dawon Kim,Myounghyun Lee,Kwanyong Seo

DOI: https://doi.org/10.1073/pnas.2404684121

2024-08-13

Abstract:Transparent solar cells (TSCs) hold substantial potential as continuous energy generators, enabling their use in situations where conventional devices may not be feasible. However, research aimed at modularizing TSCs for the purpose of regulating the overall voltage and current they produce, a critical step toward practical application, is still in its nascent stages. In this study, we explored a custom-designed, all-back-contact (ABC) configuration, which situates all electrical contacts on the rear side, to create glass-like transparent crystalline silicon (c-Si) solar cells and seamless modules. The ABC design not only demonstrates high power conversion efficiency (PCE) in solar cells but also ensures unobstructed visibility through transparent solar modules. Notably, ABC-transparent c-Si solar cells achieved a peak PCE of 15.8% while maintaining an average visible transmittance of 20%. Through seamlessly interconnecting the unit cells, the output voltage and power were systematically tuned from 0.64 V and 15.8 mW (for a 1 cm2-sized unit cell) to 10.0 V and 235 mW (for a 16 cm2-sized module). Furthermore, we successfully demonstrated the photocharging of a smartphone using a transparent ABC solar module.
Highly transparent modulated surface textured front electrodes for high‐efficiency multijunction thin‐film silicon solar cells

hairen tan,etienne moulin,fai tong si,janwillem schuttauf,michael stuckelberger,olindo isabella,franzjosef haug,christophe ballif,miro zeman,a h m smets

DOI: https://doi.org/10.1002/pip.2639

2015-01-01

Abstract:To further increase the efficiency of multijunction thin-film silicon (TF-Si) solar cells, it is crucial for the front electrode to have a good transparency and conduction, to provide efficient light trapping for each subcell, and to ensure a suitable morphology for the growth of high-quality silicon layers. Here, we present the implementation of highly transparent modulated surface textured (MST) front electrodes as light-trapping structures in multijunction TF-Si solar cells. The MST substrates comprise a micro-textured glass, a thin layer of hydrogenated indium oxide (IOH), and a sub-micron nano-textured ZnO layer grown by low-pressure chemical vapor deposition (LPCVD ZnO). The bilayer IOH/LPCVD ZnO stack guarantees efficient light in-coupling and light trapping for the top amorphous silicon (a-Si:H) solar cell while minimizing the parasitic absorption losses. The crater-shaped micro-textured glass provides both efficient light trapping in the red and infrared wavelength range and a suitable morphology for the growth of high-quality nanocrystalline silicon (nc-Si:H) layers. Thanks to the efficient light trapping for the individual subcells and suitable morphology for the growth of high-quality silicon layers, multijunction solar cells deposited on MST substrates have a higher efficiency than those on single-textured state-of-the-art LPCVD ZnO substrates. Efficiencies of 14.8% (initial) and 12.5% (stable) have been achieved for a-Si:H/nc-Si:H tandem solar cells with the MST front electrode, surpassing efficiencies obtained on state-of-the-art LPCVD ZnO, thereby highlighting the high potential of MST front electrodes for high-efficiency multijunction solar cells. Copyright (c) 2015 John Wiley & Sons, Ltd.
Optimizing the Back Contact of Kesterites and Perovskites: Band Edge Design and Defect Engineering in Molybdenum Chalcogenides

Huiwen Xiang,Jinping Zhang,Hanzhen Liang,Rui Zhu,Chengyan Liu,Yu Jia

DOI: https://doi.org/10.1002/adsu.202100457

IF: 6.737

2022-01-01

Advanced Sustainable Systems

Abstract:Back contacts, as an important part of solar cell devices, play a critical role in efficient separation of carriers and reduction of interfacial recombination. Here, by analyzing interfacial band alignment, thickness and defect properties of back contacts, a design principle for back contacts is proposed to properly accommodate the interrelated factors of short‐circuit current (Jsc), open‐circuit voltage (Voc), series resistance (Rs), and nonradiative recombination centers (NRCs) at the same time. A preferred back contact should have (i) a high valance band maximum (VBM) and (ii) a low Fermi level relative to absorber to drive hole extraction and block electron leakage, (iii) a thin design under the premise of p+‐type characteristic to effectively reduce Rs, which also ensures a wide depletion region on the absorber side to promote hole collection, and (iv) no additional deep‐level defects as interfacial NRCs. Taking molybdenum chalcogenide as example, p+‐type MoSe2/MoS2 realized by group VB element doping satisfies the design principles and is promising as an excellent back contact for kesterite/perovskite solar cells. This study gives theoretical guidance for designing an ideal back contact and shows how to improve the photovoltaic performance of solar cells by interfacial optimization.
Bifacial Photovoltaic Performance of Semitransparent Ultrathin Cu(In,Ga)Se2 Solar Cells with Front and Rear Transparent Conducting Oxide Contacts

Min Jeong Shin,Sungeun Park,Ahreum Lee,Se Jun Park,Ara Cho,Kihwan Kim,Seung Kyu Ahn,Joo Hyung Park,Jinsu Yoo,Donghyeop Shin,Inyoung Jeong,Jae Ho Yun,Jihye Gwak,Jun-Sik Cho

DOI: https://doi.org/10.1016/j.apsusc.2020.147732

IF: 6.7

2020-01-01

Applied Surface Science

Abstract:We report the bifacial photovoltaic performance of semitransparent ultrathin Cu(In,Ga)Se-2 (CIGS) solar cells with Sn-doped In2O3 front and F-doped SnO2 rear contacts prepared using a single-stage co-evaporation process under front- and rear-illumination conditions. The power conversion efficiencies (PCEs) of the solar cells measured at 100 mW/cm(2) increased with increasing ultrathin CIGS absorber thickness (200-400 nm), from 6.89 to 9.75% when front illuminated, and from 4.91 to 6.46% when rear illuminated, while the corresponding average visible transmission values (420-720 nm) gradually decreased from 18.53% to 5.06%. The bifacial photovoltaic performance of semitransparent solar cells with 200-nm- and 300-nm-thick CIGS absorber layers was also investigated under low-light conditions (100-10 mW/cm(2)). The PCE of the solar cell with a 300-nm-thick CIGS absorber layer remained almost constant with decreasing light intensity (100-10 mW/cm(2)), at similar to 8% (front illumination) and similar to 6% (rear illumination), while that of the solar cell with 200-nm-thick layer decreased from 6.84% to 3.43% (front illumination) and from 4.91% to 2.41% (rear illumination). The enhanced bifacial performance of the solar cell with the 300-nm-thick CIGS absorber layer is attributed to high shunt resistance in the solar cell owing to the improved microstructural qualities.
Rear Interface Engineering in Solution‐Processed Submicron Cu(In,Ga)(S,Se)2 Solar Cells on Transparent Sn:In2O3 Back Contact

Yao Gao,Guanchao Yin,Martina Schmid

DOI: https://doi.org/10.1002/admi.202300566

IF: 5.4

2023-09-02

Advanced Materials Interfaces

Abstract:Semi‐transparent CIGSSe solar cells present inferior performance due to the formation of a GaOx barrier layer at the CIGSSe/ITO interface leading to high rear interface recombination. Introducing a Cu‐In‐TU‐DMF interface modification layer before CIGSSe deposition can reduce the recombination at the rear interface of semi‐transparent CIGSSe solar cells. Such interface‐modified submicron CIGSSe absorber leads to an improvement of photovoltaic performance. The parasitic absorption in Cu(In,Ga)(S,Se)2 (CIGSSe) solar cells emerging from the Mo back contact can be significantly reduced by replacing it with tin‐doped indium oxide (ITO). Commonly, an undesirable GaOx layer forms at the CIGSSe/ITO interface during the high‐temperature fabrication process, which has a detrimental effect on photo‐carrier extraction. Here, a Cu‐In‐TU‐DMF (TU: thiourea, DMF: N, N‐Dimethylformamide) intermediate layer for modification of the CIGSSe/ITO interface, which improves the efficiency of submicron CIGSSe solar cells significantly, is reported about. The reference submicron CIGSSe solar cells exhibit inferior performance (2.4% efficiency) and a large open circuit voltage deficit (Voc,def = 815.9 mV) due to a high barrier at the CIGSSe/ITO interface. At the modified rear interface, the recombination is reduced and hence carrier transport and collection are obviously improved. The efficiency of submicron CIGSSe solar cells on ITO with rear interface modification achieves 7.9% with an open circuit voltage of 565.8 mV, a short circuit current density of 23.4 mA cm−2, and a fill factor of 59.5%, as well as a Voc,def of 589.2 mV.

materials science, multidisciplinary,chemistry
Band Alignment for Rectification and Tunneling Effects in Al2O3 Atomic-Layer-Deposited on Back Contact for CdTe Solar Cell.

Yantao Su,Chao Xin,Yancong Feng,Qinxian Lin,Xinwei Wang,Jun Liang,Jiaxin Zheng,Yuan Lin,Feng Pan

DOI: https://doi.org/10.1021/acsami.6b07421

IF: 9.5

2016-01-01

ACS Applied Materials & Interfaces

Abstract:The present work intends to explain why ultrathin Al2O3 atomic-layer-deposited (ALD) on the back contact with rectification and tunneling effects can significantly improve the performance of CdTe solar cells in our previous work [ Liang , J. ; et al. Appl. Phys. Lett. 2015 , 107 , 013907 ]. Herein, we further study the mechanism through establishing the interfacial energy band diagram configuration of the ALD Al2O3/CuxTe by experiment of X-ray photoelectron spectroscopy and first-principles calculations and conclude to find the band alignment with optimized layer thickness (about 1 nm ALD Al2O3) as the key factor for rectification and tunneling effects.
Highly reflective and passivated ohmic contacts in p-Ge by laser processing of aSiCx:H(i)/Al2O3/aSiC films for thermophotovoltaic applications

M. Gamel,G. López,A.M. Medrano,A. Jiménez,A. Datas,M. Garín,I. Martín

DOI: https://doi.org/10.1016/j.solmat.2023.112622

IF: 6.9

2024-01-01

Solar Energy Materials and Solar Cells

Abstract:Crystalline germanium (c-Ge) has historically been regarded as a cost-effective alternative to III-V semiconductors for thermophotovoltaic (TPV) device fabrication. However, Ge-based devices have not yet reported high efficiencies, partially due to the lack of an efficient back-surface reflector that turns back to the heat source out-band (sub-bandgap) thermal radiation. The difficulty of implementing back surface reflectors in Ge TPV cells is related to the simultaneous requirement of good back surface passivation, low electrical resistivity, and high out-band optical reflectivity. In this study, we demonstrate a highly reflective ohmic contact to p-type c-Ge (doping concentration of 2 × 1015 cm−3) made of an aSiCx(1 nm)/Al2O3 (50 nm)/aSiC (45 nm) stack that is laser processed using Nd:YVO4 laser emitting at 355 nm to create punctual p+ contacts (locally diffused Al regions). This stack is finally caped with a thick (1000 nm) Al layer that behaves as a metallic mirror and back electrode. As the laser processed area increases from 0.1 to 3 %, which is the typical range in the final devices, the surface recombination velocity increase from 10.5 to 60.0 cm/s, while the effective contact resistance reduces from 0.462 to 0.036 Ω cm2. Moreover, a sub-bandgap reflectance of 90–98 % is achieved. Simulations assuming ideal device configuration indicate that implementing these back contacts could potentially enable TPV cell conversion efficiencies comparable to the reported high-efficiency c-Ge TPV cells operating at similar illumination temperature.

materials science, multidisciplinary,physics, applied,energy & fuels
Optimized Metallization for Interdigitated Back Contact Silicon Heterojunction Solar Cells

Johann-Christoph Stang,A. Merkle,M. Mews,T. Franssen,R. Peibst,L. Korte,B. Rech,J. Haschke

DOI: https://doi.org/10.1002/SOLR.201700021

2017-04-01

Abstract:We report on the design and manufacturing of interdigitated back contact cells based on the silicon heterojunction technology. The influence of geometry and overlap of the doped amorphous silicon layers forming the contact fingers on device performance have been investigated by simulation. Two contact formation concepts, with and without a TCO interlayer – an indium tin oxide/silver (ITO/Ag) stack, and a direct aluminum (Al) metallization – are experimentally evaluated. The former retains good passivation but leads to a too high contact resistivity, the latter shows the opposite behavior, but yields a slight benefit in terms of overall performance achieving more than 20% of efficiency. We show that in this case a contact system is formed whose properties can be tuned by annealing, enabling a trade-off between VOC and FF. Structure of the presented solar cell; a SiNX layer covers the front side, the rear side is passivated by overlapping layer stacks of intrinsic and doped amorphous silicon, the latter are contacted by aluminum.

Engineering,Physics,Materials Science
Efficient Nanocrystal Photovoltaics with PTAA as Hole Transport Layer

Ao Xu,Qichuan Huang,Kaiying Luo,Donghuan Qin,Wei Xu,Dan Wang,Lintao Hou

DOI: https://doi.org/10.3390/nano12173067

IF: 5.3

2022-09-03

Nanomaterials

Abstract:The power conversion efficiency (PCE) of solution-processed CdTe nanocrystals (NCs) solar cells has been significantly promoted in recent years due to the optimization of device design by advanced interface engineering techniques. However, further development of CdTe NC solar cells is still limited by the low open-circuit voltage (Voc) (mostly in range of 0.5–0.7 V), which is mainly attributed to the charge recombination at the CdTe/electrode interface. Herein, we demonstrate a high-efficiency CdTe NCs solar cell by using organic polymer poly[bis(4–phenyl)(2,4,6–trimethylphenyl)amine] (PTAA) as the hole transport layer (HTL) to decrease the interface recombination and enhance the Voc. The solar cell with the architecture of ITO/ZnO/CdS/CdSe/CdTe/PTAA/Au was fabricated via a layer-by-layer solution process. Experimental results show that PTAA offers better back contact for reducing interface resistance than the device without HTL. It is found that a dipole layer is produced between the CdTe NC thin film and the back contact electrode; thus the built–in electric field (Vbi) is reinforced, allowing more efficient carrier separation. By introducing the PTAA HTL in the device, the open–circuit voltage, short-circuit current density and the fill factor are simultaneously improved, leading to a high PCE of 6.95%, which is increased by 30% compared to that of the control device without HTL (5.3%). This work suggests that the widely used PTAA is preferred as the excellent HTL for achieving highly efficient CdTe NC solar cells.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Multi-layer transparent electrodes for high performance bifacial perovskite solar cells

Yong Zhan,Shuguang Cao,Maohua Huang,Yanqing Zhu,Yiqun Li,Xueqing Xu,Zhuoneng Bi,Yupeng Zheng,Liuwen Zhong,Gang Xu,Shengzhong （Frank） Liu,Kai Wang,Xiaoli Chen,Qiting Deng,Jieling Liu,Jie Xu,Thomas M. Brown

DOI: https://doi.org/10.1016/j.surfin.2023.103765

IF: 6.2

2023-12-26

Surfaces and Interfaces

Abstract:Bifacial perovskite solar cells have gained significant interest due to their high light-harvesting capabilities. In this study, a multilayer transparent conducting film (MLTCF) composed of indium tin oxide (ITO)/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP)/Ag/ITO is developed as a top electrode for bifacial perovskite solar cells (PSCs). By applying BCP at the bottom of the ITO layer as an adhesion promoter, the Volmer–Weber mechanism of island growth pattern for Ag under thickness threshold conditions is successfully suppressed. This results in ultra-thin (8 nm) and ultra-smooth Ag films with a relatively low sheet resistance of 5.5 Ω/sq and high transmittance of 85.8 % at a typical wavelength of 550 nm. Furthermore, a molybdenum oxide (MoO 3 ) overlayer is evaporated onto the soft organic charge transport layer as a protective buffer to prevent sputtering damage during the deposition of ITO and Ag films. Consequently, bifacial PSCs exhibit an optimized power conversion efficiency (PCE) of 20.3% for single-side illumination from the glass side, and equivalent PCEs of 23.6 %, 25.2 %, 26.8 % with albedo of 0.2, 0.3 and 0.4, respectively. This work paves the way for the development of highly efficient bifacial thin-film solar cells.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Achieving bifacial photovoltaic performance in PTB7-based organic solar cell by integrating transparent contact for emerging semi-transparent applications

Erman Çokduygulular,Çağlar Çetinkaya,Serkan Emik,Barış Kınacı

DOI: https://doi.org/10.1038/s41598-024-76366-1

IF: 4.6

2024-10-29

Scientific Reports

Abstract:In this study, the design, fabrication and detailed analysis of semi-transparent bifacial organic solar cells (ST-OSC) based on MoO 3 /Ag/WO 3 (10/d m /d od nm) dielectric/metal/dielectric (DMD) transparent contact system integrated with PTB7 polymer were investigated. The study emphasizes the importance of designing transparent contact systems to optimize the solar cells' transparency (average visible transmittance, AVT), color rendering (color rendering index, CRI), efficiency (power conversion efficiency, PCE), and bifaciality. The performance of three distinct configurations was examined in the AVT max (47.14% AVT, 3.93% PCE), (CRI ext ) max (23.82% AVT, 6.21% PCE), and Extreme Color (26.34% AVT, 5.81% PCE). The theoretically predicted AVTs for these configurations were 48.75%, 22.29%, and 25.15%, respectively. The strong agreement between theoretical and observed outcomes confirmed the accuracy of the Transfer Matrix Model (TMM). Furthermore, the assessment of bifaciality performance exhibited that the AVT max had a bifaciality factor of 0.94, with a PCE of 3.67% under top illumination and 3.93% under bottom illumination. The high bifaciality of the structure designed with TMM to maximize the AVT demonstrates the value of calculations prior to solar cell structure fabricating and the possibility of constructing high bifaciality structures using this technique.

multidisciplinary sciences

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