Abstract:Emerging macro- and flexible electronic applications such as foldable displays, artificial skins, and smart textiles grow rapidly into the market. Solution-processed thin-film transistors (TFTs) based on single-walled carbon nanotubes (SWCNTs) as the semiconductor channel can offer high performance, low cost and versatility for macro- and flexible electronics. Major challenges to the development of SWCNT-based TFTs include: (i) hysteresis in their transfer characteristics (TCs), (ii) difficulties in simultaneous achievements of high on-state current Ion and large on/off current ratio Ion/Ioff, and (iii) poor uniformity and scalability resulting from the poor solution processability. This thesis aims at developing reliable and simple process techniques for fabrication of the SWCNT-based TFTs that possess the afore-stated characteristics. It presents a systematic investigation to not only explore the fundamental device physics, but also develop novel fabrication methods for enhancement of device performance.First, issues related to the measurement of gate capacitance (Cg), the determination of current scalability, and the hysteresis in randomly networked SWCNTs are properly addressed. This leads to the establishment of a comprehensive methodology for extraction of carrier mobility (μ) for the SWCNT-based TFTs. In detail, the large hysteresis is effectively suppressed by adopting a pulsed drain current-gate voltage (Id-Vg) method in which the polarity of the gate pulse was alternating during the measurement. Different from most reported methods in the literature, Cg is accurately determined in our case by performing direct capacitance-voltage measurement on the TFTs.Second, with the employment of functional composites comprising SWCNTs embedded in a semiconducting polymer, poly-9,9 dioctyl-fluorene-cobithiophene (F8T2), as the semiconducting channel via facile solution processes under ambient conditions, the fabricated TFTs exhibit outstanding electrical performance with: (i) negligible hysteresis, (ii) high μ, (iii) high Ion and large Ion/Ioff, (iv) excellent uniformity and dimensional scalability, and (v) good stability. These highly desired performance parameters are achieved owing to an ideal composite structure with metallic SWCNTs being selectively removed and the remaining semiconducting SWCNTs being well wrapped by the polymer matrix.Finally, the developed TFTs basing on the SWCNT/F8T2 composite are used as the building block to construct some logic circuits. The resultant inverters, NANDs, and NORs are found to retain the small-hysteresis characteristics, with a cut-off frequency reaching 100 kHz. The results presented in this thesis advance the state-of-art SWCNT-based macroelectronics.

Low-temperature wafer-scale fabrication of carbon nanotube network TFT: Geometry effect and transport mechanism

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Investigation on self-heating effect in carbon nanotube field-effect transistors

Wafer Scale Fabrication Of Carbon Nanotube Thin Film Transistors With High Yield

Tuning Threshold Voltage of Carbon Nanotube Thin Film Transistors by Channel Length Engineering

Lowering Interface State Density in Carbon Nanotube Thin Film Transistors Through Using Stacked Y2O3/HfO2 Gate Dielectric

Improving Subthreshold Swing to Thermionic Emission Limit in Carbon Nanotube Network Film-Based Field-Effect

Carbon Nanotube Thin Film Transistors Fabricated by an Etching Based Manufacturing Compatible Process

A novel thin-film transistor using carbon nanotubes as both channel and electrodes

Short Channel Carbon Nanotube Thin Film Transistors with High On/off Ratio Fabricated by Two-Step Fringing Field Dielectrophoresis

Long‐Channel Effects in Randomly Oriented Carbon Nanotube Thin Film Transistors

Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits.

The Effect of Low-Temperature Annealing on the Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors

Low-voltage High-Performance Flexible Digital and Analog Circuits Based on Ultrahigh-Purity Semiconducting Carbon Nanotubes

Exploring the Performance Limit of Carbon Nanotube Network Film Field‐Effect Transistors for Digital Integrated Circuit Applications

Carbon Nanotubes for Thin Film Transistor: Fabrication, Properties, and Applications

Integration and Characterization of Transparent Thin Film Transistors with Carbon Nanotubes As Aligned Channel and Electrodes

Exploration of Vertical Scaling Limit in Carbon Nanotube Transistors

An Etching-Free Method for Patterning Carbon Nanotube Films Enabled by Universal Wettability Modulation

Metal contact effect on the performance and scaling behavior of carbon nanotube thin film transistors.

Thin-Film Field-Effect Transistors Based on Composites of Semiconducting Polymer and Carbon Nanotubes