Layer‐Dependent Raman Spectroscopy and Electronic Applications of Wide‐Bandgap 2D Semiconductor β‐ZrNCl

Huiyu Nong,Qinke Wu,Junyang Tan,Yujie Sun,Rongxu Zheng,Rongjie Zhang,Shilong Zhao,Bilu Liu
DOI: https://doi.org/10.1002/smll.202107490
IF: 13.3
2022-02-20
Small
Abstract:In recent years, 2D layered semiconductors have received much attention for their potential in next-generation electronics and optoelectronics. Wide-bandgap 2D semiconductors are especially important in the blue and ultraviolet wavelength region, although there are very few 2D materials in this region. Here, monolayer β-type zirconium nitride chloride (β-ZrNCl) is isolated for the first time, which is an air-stable layered material with a bandgap of ≈3.0 eV in bulk. Systematical investigation of layer-dependent Raman scattering of ZrNCl from monolayer, bilayer, to bulk reveals a blueshift of its out-of-plane A<sub>1g</sub> peak at ≈189 cm<sup>-1</sup> . Importantly, this A<sub>1g</sub> peak is absent in the monolayer, suggesting that it is a fingerprint to quickly identify the monolayer and for the thickness determination of 2D ZrNCl. The back gate field-effect transistor based on few-layer ZrNCl shows a high on/off ratio of 10<sup>8</sup> . These results suggest the potential of 2D β-ZrNCl for electronic applications.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
What problem does this paper attempt to address?