Abstract:Two-dimensional (2D) release layers are commonly used to realize flexible nitride films. Here, high-quality, large-area, and transferable nitride films can be precisely controlled grown on O<sub>2</sub>-plasma-assisted patterned graphene. The first-principles calculation indicates that the patterned graphene introduced by O<sub>2</sub> plasma changes the original wettability of sapphire and the growth behavior of Al atoms is related with layer number of graphene, which is consistent with experimental results. The as-fabricated violet GaN-based light-emitting diodes (LEDs) show high stability and high light output power (LOP). This work provides a general rule for the growth of high-quality and transferable III-nitride films on graphene from the atomic scale and provide actual demonstration in LED. The advantages of the proposed new growth method can supply new ways for electronic and optoelectronic flexible devices of group III nitride semiconductors.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c04659?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c04659</a>.Adsorption energy of Al atoms adsorbed on different sites of substrate. Schematic of the probability distribution of Al atoms on the graphene and sapphire. Adsorption energy of Al atoms adsorbed on different sites of graphene. Surface coverage of AlN for a different number of graphene layers. X-ray rocking curves of (002) AlN and (102) AlN grown on the patterned graphene and of (002) AlN grown on the patterned graphene and the intact graphene. XPS data of sapphire/patterned graphene/AlN. Raman spectra of graphene before and after AlN growth. Raman mapping of 2D peak of graphene on substrate after AlN growth. (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c04659/suppl_file/am1c04659_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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