Abstract:Electron–phonon coupling plays a key role in affecting the properties of the semiconducting nanostructures, such as providing the possibility for obtaining higher superconducting transition temperatures. Here, using Raman, temperature‐dependent and polarized Raman scattering measurements, ultra‐strong electron–phonon coupling in 1D CdS nanowires and 2D graphene heterostructures is demonstrated. The intensity ratio of 2LO/1LO mode in CdS nanowires provides a spectroscopy‐based method to quantify electron–phonon coupling, the strength of which is temperature and polarization dependent. The intensity ratio mode of 2LO/1LO in heterostructure reached up to 8.95 when the incident laser polarization is parallel to the c‐axis of the nanowire. It is ≈2.37 times higher than in an individual nanowire. In addition, in situ and time‐resolved photoluminescence spectra demonstrate the dynamics of the exciton recombinations, providing a comprehensive understanding of the enhancement of electron–phonon coupling in heterostructures. Via optical waveguiding characterization, the graphene layer is demonstrated to not only be an ultrafast carrier transfer channel but also a low Fermi level channel that induces the formation of the built in electrical field, elevating the electron–phonon coupling. Such new mixed dimensional heterostructures illustrate a straightforward approach to enhance the electron–phonon coupling, which may be applied to many integrated superconducting photonic and optoelectronic devices. Due to the formation of the built‐in electric field, the mixed dimensional 1D CdS nanowire/2D graphene van der Waals heterostructure shows strong electron–phonon coupling with the average intensity ratio of 2LO/1LO Raman mode is 1.2. Additionally, CdS nanowires are the typical polar semiconductor, the intensity of 2LO/1LO presents polarization dependence, and the maximum value can reach up to 8.95.

Probing Enhanced Electron-Phonon Coupling in Graphene by Infrared Resonance Raman Spectroscopy

Infrared resonance Raman of bilayer graphene: signatures of massive fermions and band structure on the 2D peak

Beyond double-resonant Raman scattering: UV Raman spectroscopy on graphene, graphite and carbon nanotubes

Theory of infrared double-resonance Raman spectrum in graphene: the role of the zone-boundary electron-phonon enhancement

Probing near Dirac point electron-phonon interaction in graphene

Raman Scattering and Tunable Electron–phonon Coupling in Single Layer Graphene

Electron-mediated anharmonicity and its role in the Raman spectrum of graphene

Probing Carbon Isotope Effects On The Raman Spectra Of Graphene With Different C-13 Concentrations

Nonequilibrium Phonon Tuning And Mapping In Few-Layer Graphene With Infrared Nanoscopy

Electric Field Effect Tuning of Electron-Phonon Coupling in Graphene

Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene

Probing Plasmons in Graphene by Resonance Energy Transfer

Coherent anti-Stokes Raman spectroscopy of single and multi-layer graphene

Probing Carbon Isotope Effects on the Raman Spectra of Graphene with Differentc13concentrations

Optoelectronic Properties of Graphene in the Presence of Optical Phonon Scattering

Ultraviolet Raman Spectra of Double-Resonant Modes of Graphene

Boosting Enhancement of the Electron–Phonon Coupling in Mixed Dimensional CdS/Graphene van der Waals Heterojunction

Raman spectroscopy of magneto-phonon resonances in graphene and graphite

Electrical Switch to the Resonant Magneto-Phonon Effect in Graphene

Snapshots of non-equilibrium Dirac carrier distributions in graphene