Abstract:We report a comprehensive micro-Raman scattering study of electrochemically-gated graphene field-effect transistors. The geometrical capacitance of the electrochemical top-gates is accurately determined from dual-gated Raman measurements, allowing a quantitative analysis of the frequency, linewidth and integrated intensity of the main Raman features of graphene. The anomalous behavior observed for the G-mode phonon is in very good agreement with theoretical predictions and provides a measurement of the electron-phonon coupling constant for zone-center ($\Gamma$ point) optical phonons. In addition, the decrease of the integrated intensity of the 2D-mode feature with increasing doping, makes it possible to determine the electron-phonon coupling constant for near zone-edge (K and K' points) optical phonons. We find that the electron-phonon coupling strength at $\Gamma$ is five times weaker than at K (K'), in very good agreement with a direct measurement of the ratio of the integrated intensities of the resonant intra- (2D') and inter-valley (2D) Raman features. We also show that electrochemical reactions, occurring at large gate biases, can be harnessed to efficiently create defects in graphene, with concentrations up to approximately $1.4\times 10^{12}~\rm cm^{-2}$. At such defect concentrations, we estimate that the electron-defect scattering rate remains much smaller than the electron-phonon scattering rate. The evolution of the G- and 2D-mode features upon doping remain unaffected by the presence of defects and the doping dependence of the D mode closely follows that of its two-phonon (2D mode) overtone. Finally, the linewidth and frequency of the G-mode phonon as well as the frequencies of the G- and 2D-mode phonons in doped graphene follow sample-independent correlations that can be utilized for accurate estimations of the charge carrier density.

Probing Carbon Isotope Effects on the Raman Spectra of Graphene with Differentc13concentrations

Probing Carbon Isotope Effects On The Raman Spectra Of Graphene With Different C-13 Concentrations

Experimental Phonon Band Structure of Graphene using C$^{12} and C$^{13}$ Isotopes

Real-space Raman spectroscopy of graphene isotope superlattices

Probing Carbon Nanoparticles in Cnx Thin Films Using Raman Spectroscopy

Resonant Raman Spectroscopy of Graphene Grown on Copper Substrates

Probing Enhanced Electron-Phonon Coupling in Graphene by Infrared Resonance Raman Spectroscopy

Characterisation of carbon nano-onions using Raman spectroscopy

Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene

Coherent anti-Stokes Raman spectroscopy of single and multi-layer graphene

Multiple-excitation study of the double-resonance Raman bands in rhombohedral graphite

Direct Measurement of the Raman Enhancement Factor of Rhodamine 6G on Graphene under Resonant Excitation

Raman spectroscopic determination of the length, strength, compressibility, Debye temperature, elasticity, and force constant of the C-C bond in graphene.

Enhanced double resonance Raman scattering in multilayer graphene with broadband coherent anti-Stokes Raman spectroscopy

Direct Observation of Inner and Outer G' Band Double-resonance Raman Scattering in Free Standing Graphene

Probing the Intrinsic Properties of Exfoliated Graphene: Raman Spectroscopy of Free-Standing Monolayers

Raman Radiation Patterns of Graphene

Beyond double-resonant Raman scattering: UV Raman spectroscopy on graphene, graphite and carbon nanotubes

Raman Nanometrology of Graphene: Temperature and Substrate Effects

Raman Spectroscopy of Electrochemically-Gated Graphene Transistors: Geometrical Capacitance, Electron-Phonon, Electron-Electron, and Electron-Defect Scattering

Reliability of Raman Measurements of Thermal Conductivity of Single-Layer Graphene Due to Selective Electron-Phonon Coupling: A First-Principles Study