Abstract:We report a comprehensive micro-Raman scattering study of electrochemically-gated graphene field-effect transistors. The geometrical capacitance of the electrochemical top-gates is accurately determined from dual-gated Raman measurements, allowing a quantitative analysis of the frequency, linewidth and integrated intensity of the main Raman features of graphene. The anomalous behavior observed for the G-mode phonon is in very good agreement with theoretical predictions and provides a measurement of the electron-phonon coupling constant for zone-center ($\Gamma$ point) optical phonons. In addition, the decrease of the integrated intensity of the 2D-mode feature with increasing doping, makes it possible to determine the electron-phonon coupling constant for near zone-edge (K and K' points) optical phonons. We find that the electron-phonon coupling strength at $\Gamma$ is five times weaker than at K (K'), in very good agreement with a direct measurement of the ratio of the integrated intensities of the resonant intra- (2D') and inter-valley (2D) Raman features. We also show that electrochemical reactions, occurring at large gate biases, can be harnessed to efficiently create defects in graphene, with concentrations up to approximately $1.4\times 10^{12}~\rm cm^{-2}$. At such defect concentrations, we estimate that the electron-defect scattering rate remains much smaller than the electron-phonon scattering rate. The evolution of the G- and 2D-mode features upon doping remain unaffected by the presence of defects and the doping dependence of the D mode closely follows that of its two-phonon (2D mode) overtone. Finally, the linewidth and frequency of the G-mode phonon as well as the frequencies of the G- and 2D-mode phonons in doped graphene follow sample-independent correlations that can be utilized for accurate estimations of the charge carrier density.

Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene

Resonance of Graphene Nanoribbons Doped with Nitrogen and Boron: a Molecular Dynamics Study

Raman spectra and electron-phonon coupling in disordered graphene with gate-tunable doping

The Dependence Of Graphene Raman D-Band On Carrier Density

Doping dependence of the Raman spectrum of defected graphene

Phonons in potassium doped graphene: the effects of electron-phonon interactions, dimensionality and ad-atom ordering

Electron-mediated anharmonicity and its role in the Raman spectrum of graphene

Raman Scattering and Tunable Electron–phonon Coupling in Single Layer Graphene

Raman Spectroscopy of Electrochemically-Gated Graphene Transistors: Geometrical Capacitance, Electron-Phonon, Electron-Electron, and Electron-Defect Scattering

Distinguishing Coulomb and electron-phonon interactions for massless Dirac fermions

Doped graphene as tunable electron-phonon coupling material

Influence of B doping and N doping on structure and electronic properties of graphene

Time-dependent Quantum Monte Carlo Simulation of Electron Devices with Two-Dimensional Dirac Materials: A Genuine Terahertz Signature for Graphene

Manifestation of nonlocal electron-electron interaction in graphene

Quantum Time-Dependent Monte Carlo Simulation of Electron Devices with 2D Linear-Band Materials: a Genuine TeraHertz Signature for Graphene

Probing Enhanced Electron-Phonon Coupling in Graphene by Infrared Resonance Raman Spectroscopy

Scanning Raman spectroscopy of graphene antidot lattices: Evidence for systematic p-type doping

Electron-Phonon Interactions in Bilayer Graphene: A First Principles Approach

Monitoring electrostatically-induced deflection, strain and doping in suspended graphene using Raman spectroscopy

Model study of the electron-phonon coupling in graphene; relative importance of intraband and interband scattering

Charge Effects and Electron Phonon Coupling in Potassium-Doped Graphene