Abstract:We report a comprehensive micro-Raman scattering study of electrochemically-gated graphene field-effect transistors. The geometrical capacitance of the electrochemical top-gates is accurately determined from dual-gated Raman measurements, allowing a quantitative analysis of the frequency, linewidth and integrated intensity of the main Raman features of graphene. The anomalous behavior observed for the G-mode phonon is in very good agreement with theoretical predictions and provides a measurement of the electron-phonon coupling constant for zone-center ($\Gamma$ point) optical phonons. In addition, the decrease of the integrated intensity of the 2D-mode feature with increasing doping, makes it possible to determine the electron-phonon coupling constant for near zone-edge (K and K' points) optical phonons. We find that the electron-phonon coupling strength at $\Gamma$ is five times weaker than at K (K'), in very good agreement with a direct measurement of the ratio of the integrated intensities of the resonant intra- (2D') and inter-valley (2D) Raman features. We also show that electrochemical reactions, occurring at large gate biases, can be harnessed to efficiently create defects in graphene, with concentrations up to approximately $1.4\times 10^{12}~\rm cm^{-2}$. At such defect concentrations, we estimate that the electron-defect scattering rate remains much smaller than the electron-phonon scattering rate. The evolution of the G- and 2D-mode features upon doping remain unaffected by the presence of defects and the doping dependence of the D mode closely follows that of its two-phonon (2D mode) overtone. Finally, the linewidth and frequency of the G-mode phonon as well as the frequencies of the G- and 2D-mode phonons in doped graphene follow sample-independent correlations that can be utilized for accurate estimations of the charge carrier density.

Fermi resonance in the Raman spectrum of graphene

Raman spectroscopy of magneto-phonon resonances in graphene and graphite

Effect of graphene Fermi level on the Raman scattering intensity of molecules on graphene.

Infrared resonance Raman of bilayer graphene: signatures of massive fermions and band structure on the 2D peak

Probing Enhanced Electron-Phonon Coupling in Graphene by Infrared Resonance Raman Spectroscopy

Antiresonances in the Mid-Infrared Vibrational Spectrum of Functionalized Graphene

Edge Phonon State of Mono- and Few-Layer Graphene Nanoribbons Observed by Surface and Interference Co-Enhanced Raman Spectroscopy

Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene

Raman Spectroscopy of Electrochemically-Gated Graphene Transistors: Geometrical Capacitance, Electron-Phonon, Electron-Electron, and Electron-Defect Scattering

An Easy Approach to Reveal the Metallic Nature of Graphene by Breit–Wigner–Fano Lineshapes Using Raman Spectroscopy

Electron-mediated anharmonicity and its role in the Raman spectrum of graphene

Second-order overtone and combination Raman modes of graphene layers in the range of 1690-2150 cm(-1).

Strong Magnetophonon Resonance Induced Triple G-Mode Splitting In Graphene On Graphite Probed By Micromagneto Raman Spectroscopy

Second-order Overtone and Combinational Raman Modes of Graphene Layers in the Range of 1690 Cm-1 to 2150 Cm-1

Second-Order Overtone and Combination Raman Modes of Graphene Layers in the Range of 1690−2150 cm<sup>−1</sup>

Beyond double-resonant Raman scattering: UV Raman spectroscopy on graphene, graphite and carbon nanotubes

Resonant Raman scattering on graphene: SERS and gap-mode TERS

Electrical Switch to the Resonant Magneto-Phonon Effect in Graphene

Abnormal Raman Characteristics of Graphene Originating from Contact Interface Inhomogeneity

Resonant Raman Spectroscopy of Graphene Grown on Copper Substrates