A 10 kHz bandwidth low-power active negative feedback front-end amplifier based on unipolar IZO TFT technology
Mingjian Zhao,Yunfang Wang,Xinge Shi,Bin Li,Rongsheng Chen,Zhaohui Wu
DOI: https://doi.org/10.1016/j.mee.2024.112282
IF: 2.3
2024-11-03
Microelectronic Engineering
Abstract:In this paper, we present a wide-bandwidth low-power front-end amplifier based on thin-film transistors (TFTs). The amplifier with the active negative feedback structure in the form of the common source is proposed, which achieves wide bandwidth under the condition of low power consumption. In addition, the capacitor bootstrap load structure is used in the core operational transconductance amplifier (OTA) circuit, which improves the loop gain. The proposed amplifier adopts the 10 μm channel length unipolar n-type indium‐zinc-oxide (IZO) TFT technology, with an area of 2 mm 2 . The test results show a gain of 36.3 dB, a bandwidth of 10 kHz, and a power consumption of 0.04 mW at a supply voltage of 10 V. The proposed amplifier is advanced in bandwidth, power, and area, has successfully obtained and amplified real-time electrocardiogram (ECG) and electromyography (EMG) signals, and also has excellent noise efficiency factor (NEF) and power efficiency factor (PEF). Therefore, the design has potential in the field of flexible bioelectrical signal detection and other wearable electronic devices in the future.
engineering, electrical & electronic,nanoscience & nanotechnology,optics,physics, applied