Oxide TFT Frontend Amplifiers for Flexible Sensing Systems
Yuming Xu,Zhaohui Wu,Bin Li,Sunbin Deng,Wei Zhong,Guijun Li,Dongxiang Luo,Fion Sze Yan Yeung,Hoi Sing Kwok,Rongsheng Chen
DOI: https://doi.org/10.1109/ted.2021.3120023
IF: 3.1
2021-12-01
IEEE Transactions on Electron Devices
Abstract:This article presents a frontend amplifier based on the 50-$\mu \text{m}$ channel length n-type only indium–tin-oxide (ITO)-stabilized ZnO thin-film transistors (TFTs) on glass substrate. The amplifier has an external-bias ac-coupled, open-loop capacitor bootstrap structure. The area and power consumption are 41 mm2 and 0.1 mW (8-V supply), respectively. Electrical measurement results show a gain of 20 dB, a bandwidth of 3 Hz–6 kHz, a common-mode rejection ratio (CMRR) up to 42 dB, an input impedance of 100 $\text{M}\Omega $ , and an input-referred noise of $106 ~\mu \text{V}_{rms}$ (integrated from 1 to 200 Hz). The noise efficiency factor (NEF) and power efficiency factor (PEF) of the amplifier are, respectively, 248 and $4.9\times10$ 5, which is comparable among the state of the arts. The amplifier is successfully used to measure the heart-rate signal, which demonstrates its practicality.