Sputtering Deposited and Energy Band Matched ZnSnN2 Buffer Layers for Highly Efficient Cd‐Free Cu2ZnSnS4 Solar Cells
Fan Ye,Cangshuang He,Tong Wu,Shuo Chen,Zhenghua Su,Xianghua Zhang,Xingmin Cai,Guangxing Liang
DOI: https://doi.org/10.1002/adfm.202402762
IF: 19
2024-06-02
Advanced Functional Materials
Abstract:Sputtering deposition of ZnSnN2 induces no detrimental effect on the photovoltaic properties of Cu2ZnSnS4\ZnSnN2 solar cells. The energy band of ZnSnN2 straddles that of Cu2ZnSnS4 with a positive conduction band offset near the optimal value. The champion photoelectric conversion efficiency of 10% is obtained. Kesterite Cu2ZnSnS4 (CZTS) solar cells with CdS buffer layers have the problem of toxicity and cliff‐like energy band diagram disfavoring higher photoelectric conversion efficiency (PCE (%)). The preparation method for ZnSnO buffer layers which enable Cd‐free CZTS solar cells to reach the certified PCE (%) of 11.4 is limited to atomic layer deposition and sputtering deposition severely reduces PCE (%). Here, it is showed that sputtering deposited ZnSnN2 is an efficient buffer layer for Cd‐free CZTS solar cell, and without antireflection coating or additional passivation layers its champion PCE (%) has reached 10.00 which is comparable to the certified value. No buried junction and current blocking behavior are observed in the CZTS\ZnSnN2 junctions. Elemental inter‐diffusion is observed at the interface between CZTS and ZnSnN2. Most importantly, the energy band of ZnSnN2 is well‐matched with that of CZTS. The former straddles the latter. The conduction band offset is spike‐like with the conduction band of ZnSnN2 higher than that of CZTS, which effectively suppresses interface recombination and results in PCE (%) comparable to the certified value.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology