Abstract:Advanced MaterialsVolume 25, Issue 8 p. 1109-1113 Communication Bandgap-Graded CdSxSe1–x Nanowires for High-Performance Field-Effect Transistors and Solar Cells Liang Li, Corresponding Author Liang Li lli@suda.edu.cn liang.li0216@gmail.com Department of Physics, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, P. R. ChinaDepartment of Physics, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, P. R. China.Search for more papers by this authorHao Lu, Hao Lu Department of Physics, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, P. R. ChinaSearch for more papers by this authorZongyin Yang, Zongyin Yang Department of Optical Engineering, State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, P. R. ChinaSearch for more papers by this authorLimin Tong, Limin Tong Department of Optical Engineering, State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, P. R. ChinaSearch for more papers by this authorYoshio Bando, Yoshio Bando International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, JapanSearch for more papers by this authorDmitri Golberg, Dmitri Golberg International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, JapanSearch for more papers by this author Liang Li, Corresponding Author Liang Li lli@suda.edu.cn liang.li0216@gmail.com Department of Physics, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, P. R. ChinaDepartment of Physics, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, P. R. China.Search for more papers by this authorHao Lu, Hao Lu Department of Physics, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, P. R. ChinaSearch for more papers by this authorZongyin Yang, Zongyin Yang Department of Optical Engineering, State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, P. R. ChinaSearch for more papers by this authorLimin Tong, Limin Tong Department of Optical Engineering, State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, P. R. ChinaSearch for more papers by this authorYoshio Bando, Yoshio Bando International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, JapanSearch for more papers by this authorDmitri Golberg, Dmitri Golberg International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, JapanSearch for more papers by this author First published: 10 December 2012 https://doi.org/10.1002/adma.201204434Citations: 69Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract CdSxSe1–x nanowires with a graded bandgap along the length direction were utilized for field-effect transistors and Schottky junction solar cells. This novel type of nanowires suggests promising electronic and optoelectronic applications in the future. Citing Literature Supporting Information As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Filename Description adma_201204434_sm_suppl.pdf66.3 KB suppl Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article. Volume25, Issue8February 25, 2013Pages 1109-1113 RelatedInformation

High-Performance Schottky Solar Cells Using Zrs2 Nanobelt Networks

Nanowires: Bandgap‐Graded CdSxSe1–x Nanowires for High‐Performance Field‐Effect Transistors and Solar Cells (adv. Mater. 8/2013)

Bandgap-graded CdS(x)Se(1-x) Nanowires for High-Performance Field-Effect Transistors and Solar Cells.

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

High-performance single CdS nanowire (nanobelt) Schottky junction solar cells with Au/graphene Schottky electrodes.

Carbon nanotube and CdSe nanobelt Schottky junction solar cells.

Magnetron Sputtered Sb2Se3-based Thin Films Towards High Performance Quasi-Homojunction Thin Film Solar Cells

Facile in situ synthesis of dendrite-like ZnO/ZnTe core/shell nanorod heterostructures for sensitized solar cells

Unlocking the Potential of Emerging SrZrSe3 Solar Cells with Diverse Inorganic Metal Sulfide Hole Transport Layers

Numerical optimization of inorganic p-Sb2Se3/n-ZrS2 heterojunction solar cells: achieving high efficiency through SCAPS-1D simulation

Optically Resonant Bulk Heterojunction PbS Quantum Dot Solar Cell

High‐Performance and Lithography‐Free Au/WS2/Ag Vertical Schottky Junction Solar Cells

Se as hetero-nucleation seeds reinforcing intermetallic diffusion for improved electrodeposition-processed CZTS solar cells

SCAPS simulation of novel inorganic ZrS2/CuO heterojunction solar cells

Arrays of CZTS sensitized ZnO/ZnS and ZnO/ZnSe core/shell nanorods for liquid junction nanowire solar cells

Nanostructured solar cell based on solution processed Cu2ZnSnS4 nanoparticles and vertically aligned ZnO nanorod array

Highly Efficient Solid-State Solar Cells Based on Composite CdS-ZnS Quantum Dots

Nanobelt–carbon Nanotube Cross-Junction Solar Cells

Nanocrystalline ZnSnN2 Prepared by Reactive Sputtering, Its Schottky Diodes and Heterojunction Solar Cells

Interfacial engineering of ZnS passivating contacts for crystalline silicon solar cells achieving 20% efficiency

Schottky Solar Cells Based On Graphene Nanoribbon/Multiple Silicon Nanowires Junctions