Sugar cane and ethanol: Drink the best and drive the rest

E. Marris

DOI: https://doi.org/10.1038/444670A

IF: 64.8

2006-12-06

Nature

Abstract:

What problem does this paper attempt to address?

Mechanically and Thermally Guided, Honeycomb-like Nanocomposites with Strain-Insensitive High Thermal Conductivity for Stretchable Electronics

Yahui Liang,Nifang Zhao,Weiwei Gao,Hao Bai

DOI: https://doi.org/10.1021/acsnano.3c12233

IF: 17.1

2024-01-01

ACS Nano

Abstract:Thermal management materials have become increasingly crucial for stretchable electronic devices and systems. Drastically different from conventional thermally conductive materials, which are applied at static conditions, thermal management materials for stretchable electronics additionally require strain-insensitive thermal conductivity, as they generally undergo cyclic deformation. However, realizing such a property remains challenging mainly because conventional thermally conductive polymer composites generally lack a mechanically guided design. Here, we report a honeycomb-like nanocomposite with a three-dimensional (3D) thermally conductive network fabricated by an arrayed ice-templating technique followed by elastomer infiltration. The hexagonal honeycomb-like structure with thin, compact walls (approximate to 40 mu m) endows our composite with a high through-plane thermal conductivity (approximate to 1.54 W m(-1) K-1) at an ultralow boron nitride nanosheet (BNNS) loading (approximate to 0.85 vol %), with an enhancement factor of thermal conductivity up to 820% and thermal-insensitive strain up to 200%, which are 2.7 and 2 times higher than those reported in the literature. We report an intelligent strategy for the development of advanced thermal management materials for high-performance stretchable electronics.
Orientation-dependent Large Plasticity of Single-Crystalline Gallium Selenide

Heyi Wang,Hong Wu,Weitong Lin,Bin Zhang,Xiaocui Li,Yang Zhang,Sufeng Fan,Chaoqun Dang,Yingxin Zhu,Shijun Zhao,Xiaoyuan Zhou,Yang Lu

DOI: https://doi.org/10.1016/j.xcrp.2022.100816

IF: 8.9

2022-01-01

Cell Reports Physical Science

Abstract:Unlike metals and alloys with high ductility, inorganic semiconductors are mostly ceramics with brittle nature due to covalent/ionic bonding. Recent studies have shown that some layered/van der Waals semiconductors could exhibit substantial room-temperature ductility, despite the fact that the underlying mechanisms remain to be understood. Here, we report that the van der Waals semiconductor gallium(II) selenide (GaSe) can have crystal-orientation dependent large plasticity at room temperature. Through in situ tensile and compressive experiments inside electron microscopes, we demonstrate that microfabricated GaSe can have substantial ductility loaded along and slanted with the intralayer direction while showing predominantly elastic deformation perpendicular to the intralayer direction until brittle fracture. We further reveal that, despite the interlayer gliding as the main mechanism, cross-layer slips induced by buckling associated with stacking faults also contribute to the plasticity. This study offers insights to understand the ductility and plasticity of van der Waals semiconductors and shows promising flexible/deformable electronics and energy-device applications.
Stretchable silicon electronics and their integration with rubber, plastic, paper, vinyl, leather and fabric substrates

Dae-Hyeong Kim,Yun-Soung Kim,Zhuangjian Liu,Jizhou Song,Hoon-Sik Kim,Yonggang Y. Huang,John A. Rogers

DOI: https://doi.org/10.1557/PROC-1196-C01-03

2009-01-01

Abstract:Electronic systems that offer elastic mechanical responses to high strain deformations are of growing interest, due to their ability to enable new electrical, optical and biomedical devices and other applications whose requirements are impossible to satisfy with conventional wafer-based technologies or even with those that offer simple bendability. This paper describes materials and mechanical design strategies for classes of electronic circuits that offer extremely high flexibility and stretchability over large area, enabling them to accommodate even demanding deformation modes, such as twisting and linear stretching to ‘rubber-band’ levels of strain over 100%. The use of printed single crystalline silicon nanomaterials for the semiconductor provides performance in flexible and stretchable complementary metal-oxide-semiconductor (CMOS) integrated circuits approaching that of conventional devices with comparable feature sizes formed on silicon wafers. Comprehensive theoretical studies of the mechanics reveal the way in which the structural designs enable these extreme mechanical properties without fracturing the intrinsically brittle active materials or even inducing significant changes in their electrical properties. The results, as demonstrated through electrical measurements of arrays of transistors, CMOS inverters, ring oscillators and differential amplifiers, suggest a valuable route to high performance stretchable electronics that can be integrated with nearly arbitrary substrates. We show examples ranging from plastic and rubber, to vinyl, leather and paper, with capability for large area coverage.
An Intrinsically Stretchable High‐Performance Polymer Semiconductor with Low Crystallinity

Yu Zheng,Ging‐Ji Nathan Wang,Jiheong Kang,Mark Nikolka,Hung‐Chin Wu,Helen Tran,Song Zhang,Hongping Yan,Hu Chen,Pak Yan Yuen,Jaewan Mun,Reinhold H. Dauskardt,Iain McCulloch,Jeffrey B.‐H. Tok,Xiaodan Gu,Zhenan Bao

DOI: https://doi.org/10.1002/adfm.201905340

IF: 19

2019-09-12

Advanced Functional Materials

Abstract:For wearable and implantable electronics applications, developing intrinsically stretchable polymer semiconductor is advantageous, especially in the manufacturing of large‐area and high‐density devices. A major challenge is to simultaneously achieve good electrical and mechanical properties for these semiconductor devices. While crystalline domains are generally needed to achieve high mobility, amorphous domains are necessary to impart stretchability. Recent progresses in the design of high‐performance donor–acceptor polymers that exhibit low degrees of energetic disorder, while having a high fraction of amorphous domains, appear promising for polymer semiconductors. Here, a low crystalline, i.e., near‐amorphous, indacenodithiophene‐co‐benzothiadiazole (IDTBT) polymer and a semicrystalline thieno[3,2‐b]thiophene‐diketopyrrolopyrrole (DPPTT) are compared, for mechanical properties and electrical performance under strain. It is observed that IDTBT is able to achieve both a high modulus and high fracture strain, and to preserve electrical functionality under high strain. Next, fully stretchable transistors are fabricated using the IDTBT polymer and observed mobility ≈0.6 cm2 V−1 s−1 at 100% strain along stretching direction. In addition, the morphological evolution of the stretched IDTBT films is investigated by polarized UV–vis and grazing‐incidence X‐ray diffraction to elucidate the molecular origins of high ductility. In summary, the near‐amorphous IDTBT polymer signifies a promising direction regarding molecular design principles toward intrinsically stretchable high‐performance polymer semiconductor.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Inorganic Semiconducting Materials for Flexible and Stretchable Electronics

Ki Jun Yu,Zheng Yan,Mengdi Han,John A. Rogers

DOI: https://doi.org/10.1038/s41528-017-0003-z

IF: 14.6

2017-01-01

npj Flexible Electronics

Abstract:AbstractRecent progress in the synthesis and deterministic assembly of advanced classes of single crystalline inorganic semiconductor nanomaterial establishes a foundation for high-performance electronics on bendable, and even elastomeric, substrates. The results allow for classes of systems with capabilities that cannot be reproduced using conventional wafer-based technologies. Specifically, electronic devices that rely on the unusual shapes/forms/constructs of such semiconductors can offer mechanical properties, such as flexibility and stretchability, traditionally believed to be accessible only via comparatively low-performance organic materials, with superior operational features due to their excellent charge transport characteristics. Specifically, these approaches allow integration of high-performance electronic functionality onto various curvilinear shapes, with linear elastic mechanical responses to large strain deformations, of particular relevance in bio-integrated devices and bio-inspired designs. This review summarizes some recent progress in flexible electronics based on inorganic semiconductor nanomaterials, the key associated design strategies and examples of device components and modules with utility in biomedicine.
Stretchable, Curvilinear Electronics Based on Inorganic Materials

Dae-Hyeong Kim,Jianliang Xiao,Jizhou Song,Yonggang Huang,J. Rogers

DOI: https://doi.org/10.1002/adma.200902927

2010-01-01

Advances in Materials

Abstract:All commercial forms of electronic/optoelectronic technologies use planar, rigid substrates. Device possibilities that exploit bio‐inspired designs or require intimate integration with the human body demand curvilinear shapes and/or elastic responses to large strain deformations. This article reviews progress in research designed to accomplish these outcomes with established, high‐performance inorganic electronic materials and modest modifications to conventional, planar processing techniques. We outline the most well developed strategies and illustrate their use in demonstrator devices that exploit unique combinations of shape, mechanical properties and electronic performance. We conclude with an outlook on the challenges and opportunities for this emerging area of materials science and engineering.
Stretchable and Foldable Silicon Integrated Circuits

Dae-Hyeong Kim,Jong-Hyun Ahn,Won Mook Choi,Hoon-Sik Kim,Tae-Ho Kim,Jizhou Song,Yonggang Y. Huang,Zhuangjian Liu,Chun Lu,John A. Rogers

DOI: https://doi.org/10.1126/science.1154367

IF: 56.9

2008-01-01

Science

Abstract:We have developed a simple approach to high-performance, stretchable, and foldable integrated circuits. The systems integrate inorganic electronic materials, including aligned arrays of nanoribbons of single crystalline silicon, with ultrathin plastic and elastomeric substrates. The designs combine multilayer neutral mechanical plane layouts and “wavy” structural configurations in silicon complementary logic gates, ring oscillators, and differential amplifiers. We performed three-dimensional analytical and computational modeling of the mechanics and the electronic behaviors of these integrated circuits. Collectively, the results represent routes to devices, such as personal health monitors and other biomedical devices, that require extreme mechanical deformations during installation/use and electronic properties approaching those of conventional systems built on brittle semiconductor wafers.
Mechanics of stretchable inorganic electronic materials

J. Song,H. Jiang,Y. Huang,J. A. Rogers

DOI: https://doi.org/10.1116/1.3168555

2009-01-01

Abstract:Electronic systems that offer elastic mechanical responses to high strain deformation are of growing interest due to their ability to enable new applications whose requirements are impossible to satisfy with conventional wafer-based technologies. This article reviews the mechanics of stretchable inorganic materials on compliant substrates. Specifically, three forms of stretchable structures are reviewed. The first one is stretchable ribbon, which provides one-dimensional stretchability. The second is stretchable nanomembranes, which can be stretched in all directions. The last is a noncoplanar mesh design, which has the advantage of providing large stretchability up to and exceeding 100%. Mechanics models and their comparison to experiment are reviewed for these three cases. Such models provide design guidelines for stretchable electronics.
High elasticity of CsPbBr 3 perovskite nanowires for flexible electronics

Xiaocui Li,You Meng,Rong Fan,Sufeng Fan,Chaoqun Dang,Xiaobin Feng,Johnny C. Ho,Yang Lu

DOI: https://doi.org/10.1007/s12274-021-3332-0

IF: 9.9

2021-01-01

Nano Research

Abstract:Due to the enhanced ambient structural stability and excellent optoelectronic properties, all-inorganic metal halide perovskite nanowires have become one of the most attractive candidates for flexible electronics, photovoltaics and optoelectronics. Their elastic property and mechanical robustness become the key factors for device applications under realistic service conditions with various mechanical loadings. Here, we demonstrate that high tensile elastic strain (∼ 4% to ∼ 5.1%) can be achieved in vapor-liquid-solid-grown single-crystalline CsPbBr 3 nanowires through in situ scanning electron microscope (SEM) buckling experiments. Such high flexural elasticity can be attributed to the structural defect-scarce, smooth surface, single-crystallinity and nanomechanical size effect of CsPbBr 3 nanowires. The mechanical reliability of CsPbBr 3 nanowire-based flexible photodetectors was examined by cyclic bending tests, with no noticeable performance deterioration observed after 5,000 cycles. The above results suggest great application potential for using all-inorganic perovskite nanowires in flexible electronics and energy harvesting systems.
Van der Waals semiconductor InSe plastifies by phase transformation

Yandong Sun,Yupeng Ma,Jin-yu Zhang,Tian-Ran Wei,Xun Shi,David Rodney,Ben Xu

2023-12-09

Abstract:Inorganic semiconductor materials are integral to various modern technologies, yet their brittleness and limited deformability/processability pose a significant challenge in the development of flexible, wearable, and miniaturized electronics. The recent discovery of room-temperature plasticity in a few inorganic semiconductors offers a promising pathway to address this challenge, but the deformation mechanisms of these materials remain unclear. Here, we investigate the deformation of InSe, a two-dimensional (2D) van der Waals (vdW) semiconductor with substantial plasticity. By developing a machine-learned deep potential, we perform atomistic simulations that capture the deformation features of hexagonal InSe upon out-of-plane compression. Surprisingly, we discover that InSe plastifies through a so-far unrecognized martensitic phase transformation; that is, the layered hexagonal structure is converted to a tetragonal lattice with specific orientation relationship. This observation is corroborated by high-resolution experimental observations and theory. It suggests a change of paradigm, where the design of new plastically-deformable inorganic semiconductors should focus on compositions and structures that favor phase transformations rather than traditional dislocation slip.

Materials Science
Ductile inorganic semiconductors for deformable electronics

Xiaocui Li,Fu‐Rong Chen,Yang Lu

DOI: https://doi.org/10.1002/idm2.12209

2024-08-03

Interdisciplinary Materials

Abstract:Semiconductors are usually brittle, limiting their applications. Achieving room‐temperature deformability without compromising their functionalities has long been a dream. This review explores recently emerging ductile semiconductors, examining their size effects, charge characteristics, and exceptional plasticity in quasi‐layered/van der Waals semiconductors and all‐inorganic perovskites. It also discusses the potential applications and challenges of ductile semiconductors in manufacturing next‐generation flexible and deformable electronics. Traditionally, it is relatively easy to process metal materials and polymers (plastics), while ceramic and inorganic semiconductor materials are hard to process, due to their intrinsic brittleness caused by directional covalent bonds or the strong electrostatic interactions among ionic species. The brittleness of semiconductor materials, which may degrade their functional performance and cause catastrophic failures, has excluded them from many application scenarios. The exploration on room‐temperature ductile semiconductors has been a long pursuit of mankind for fabricating deformable and more robust electronics. Guided by this goal, researchers have already found that the plasticity of brittle semiconductors can be enhanced by size effects, which include fewer pre‐existing micro‐cracks and increased dislocation activity, charge characteristics, and defect density. It has also been explored that a few quasi‐layered/van der Waals semiconductors can have exceptional room‐temperature metal‐like plasticity, enabled by the relatively weak interlayer bonding and easy interlayer gliding. More recently, intrinsic exceptional plasticity has been found in a group of all‐inorganic perovskites (CsPbX3, X = Cl, Br and I), which can be morphed into distinct morphologies through multislip at room temperature, without affecting their functional properties and bandgap energy. Based on the above research status, in this review, we will discuss and present the relevant works on the plasticity found in inorganic semiconductors and the proposed deformation mechanisms. The potential applications and bottlenecks of plastic semiconductors in manufacturing next‐generation deformable electronic/optoelectronic devices and energy systems will also be discussed.
Van der Waals semiconductor InSe plastifies by martensitic transformation

Yandong Sun,Yupeng Ma,Jin-Yu Zhang,Tian-Ran Wei,Xun Shi,David Rodney,Ben Xu

DOI: https://doi.org/10.1126/sciadv.ado9593

IF: 13.6

2024-10-20

Science Advances

Abstract:Inorganic semiconductor materials are crucial for modern technologies, but their brittleness and limited processability hinder the development of flexible, wearable, and miniaturized electronics. The recent discovery of room-temperature plasticity in some inorganic semiconductors offers a promising solution, but the deformation mechanisms remain controversial. Here, we investigate the deformation of indium selenide, a two-dimensional van der Waals semiconductor with substantial plasticity. By developing a machine-learned deep potential, we perform atomistic simulations that capture the deformation features of hexagonal indium selenide upon out-of-plane compression. Unexpectedly, we find that indium selenide plastifies through a martensitic transformation; that is, the layered hexagonal structure is converted to a tetragonal lattice with specific orientation relationship. This observation is corroborated by high-resolution experimental observations and theory. It suggests a change of paradigm, where the design of new plastically deformable inorganic semiconductors can focus on compositions and structures that facilitate phase transformations, going beyond the conventional dislocation slip.

multidisciplinary sciences
Tuning Conjugated Polymer Chain Packing for Stretchable Semiconductors

Jie Xu,Hung-Chin Wu,Jaewan Mun,Rui Ning,Weichen Wang,Ging-Ji Nathan Wang,Shayla Nikzad,Hongping Yan,Xiaodan Gu,Shaochuan Luo,Dongshan Zhou,Jeffrey B. -H. Tok,Zhenan Bao

DOI: https://doi.org/10.1002/adma.202104747

IF: 29.4

2021-01-01

Advanced Materials

Abstract:In order to apply polymer semiconductors to stretchable electronics, they need to be easily deformed under strain without being damaged. A small number of conjugated polymers, typically with semicrystalline packing structures, have been reported to exhibit mechanical stretchability. Herein, a method is reported to modify polymer semiconductor packing-structure using a molecular additive, dioctyl phthalate (DOP), which is found to act as a molecular spacer, to be inserted between the amorphous chain networks and disrupt the crystalline packing. As a result, large-crystal growth is suppressed while short-range aggregations of conjugated polymers are promoted, which leads to an improved mechanical stretchability without affecting charge-carrier transport. Due to the reduced conjugated polymer intermolecular interactions, strain-induced chain alignment and crystallization are observed. By adding DOP to a well-known conjugated polymer, poly[2,5-bis(4-decyltetradecyl)pyrrolo[3,4-c]pyrrole-1,4-(2H,5H)-dione-(E)-1,2-di(2,2'-bithiophen-5-yl)ethene] (DPPTVT), stretchable transistors are obtained with anisotropic charge-carrier mobilities under strain, and stable current output under strain up to 100%.
Wafer-scale Integration of Stretchable Semiconducting Polymer Microstructures Via Capillary Gradient

Yuchen Qiu,Bo Zhang,Junchuan Yang,Hanfei Gao,Shuang Li,Le Wang,Penghua Wu,Yewang Su,Yan Zhao,Jiangang Feng,Lei Jiang,Yuchen Wu

DOI: https://doi.org/10.1038/s41467-021-27370-w

IF: 16.6

2021-01-01

Nature Communications

Abstract:Organic semiconducting polymers have opened a new paradigm for soft electronics due to their intrinsic flexibility and solution processibility. However, the contradiction between the mechanical stretchability and electronic performances restricts the implementation of high-mobility polymers with rigid molecular backbone in deformable devices. Here, we report the realization of high mobility and stretchability on curvilinear polymer microstructures fabricated by capillary-gradient assembly method. Curvilinear polymer microstructure arrays are fabricated with highly ordered molecular packing, controllable pattern, and wafer-scale homogeneity, leading to hole mobilities of 4.3 and 2.6 cm2 V-1 s-1 under zero and 100% strain, respectively. Fully stretchable field-effect transistors and logic circuits can be integrated in solution process. Long-range homogeneity is demonstrated with the narrow distribution of height, width, mobility, on-off ratio and threshold voltage across a four-inch wafer. This solution-assembly method provides a platform for wafer-scale and reproducible integration of high-performance soft electronic devices and circuits based on organic semiconductors.
Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe

Tian-Ran Wei,Min Jin,Yuecun Wang,Hongyi Chen,Zhiqiang Gao,Kunpeng Zhao,Pengfei Qiu,Zhiwei Shan,Jun Jiang,Rongbin Li,Lidong Chen,Jian He,Xun Shi

DOI: https://doi.org/10.1126/science.aba9778

IF: 56.9

2020-07-31

Science

Abstract:Deformable semiconductors Semiconductors are usually brittle and do not deform easily. Wei et al. found that bulk single crystals of indium selenide instead have excellent flexibility (see the Perspective by Han). The deformability comes from the compliant intralayer bonding between indium and selenium. The authors used these observations along with a previously discovered silver sulfide to determine a deformability factor for materials that may help find other deformable semiconductors. Science , this issue p. 542 ; see also p. 509

multidisciplinary sciences
Materials and noncoplanar mesh designs for integrated circuits with linear elastic responses to extreme mechanical deformations

Dae-Hyeong Kim,Jizhou Song,Won Mook Choi,Hoon-Sik Kim,Rak-Hwan Kim,Zhuangjian Liu,Yonggang Y. Huang,Keh-Chih Hwang,Yong-wei Zhang,John A. Rogers

DOI: https://doi.org/10.1073/pnas.0807476105

IF: 11.1

2008-12-02

Proceedings of the National Academy of Sciences

Abstract:Electronic systems that offer elastic mechanical responses to high-strain deformations are of growing interest because of their ability to enable new biomedical devices and other applications whose requirements are impossible to satisfy with conventional wafer-based technologies or even with those that offer simple bendability. This article introduces materials and mechanical design strategies for classes of electronic circuits that offer extremely high stretchability, enabling them to accommodate even demanding configurations such as corkscrew twists with tight pitch (e.g., 90° in ≈1 cm) and linear stretching to “rubber-band” levels of strain (e.g., up to ≈140%). The use of single crystalline silicon nanomaterials for the semiconductor provides performance in stretchable complementary metal-oxide-semiconductor (CMOS) integrated circuits approaching that of conventional devices with comparable feature sizes formed on silicon wafers. Comprehensive theoretical studies of the mechanics reveal the way in which the structural designs enable these extreme mechanical properties without fracturing the intrinsically brittle active materials or even inducing significant changes in their electrical properties. The results, as demonstrated through electrical measurements of arrays of transistors, CMOS inverters, ring oscillators, and differential amplifiers, suggest a valuable route to high-performance stretchable electronics.

multidisciplinary sciences
Elastic Semiconductor Blends with High Strain Cycling Durability Using an Oligothiophene-Based Multiblock Polyurethane Matrix

Chuanbin An,Weijia Dong,Dandan Pei,Xinsu Qin,Zhongli Wang,Bin Zhao,Laju Bu,Huipeng Chen,Yang Han,Chunyan Chi,Yanhou Geng

DOI: https://doi.org/10.1021/acs.macromol.3c00703

IF: 5.5

2023-07-07

Macromolecules

Abstract:To date, the preparation of high-performance stretchable and elastic semiconductors remains challenging yet urgently demanded by the stretchable electronics field. Herein, we design a multiblock polyurethane elastomer matrix PBTTT-b-HTPB by incorporating crystalline oligothiophene and flexible polyolefin blocks to blend with conjugated polymers for high-mobility semiconductor nanofilms with enhanced stretchability and elasticity. The compatibility between the matrix and the conjugated polymer is found to play the key role in manipulating the vertical and lateral phase separation structure, hence the electrical and mechanical performance of the resulting semiconducting blend films. Though five representative p-type conjugated polymers (PCDTBT, TDPP-Se, PffBT4T-DT, PBTTT and IDTBT) all form vertical continuous structures, as confirmed by film-depth-dependent light absorption spectra, only the former four thermodynamically compatible polymers can generate well-dispersed lateral structures for improved mechanical properties without compromising electrical performance. In particular, the mobility of TDPP-Se/PBTTT-b-HTPB (1:3 by weight) nanofilms reaches 2.20 cm2 V–1 s–1 in thin-film transistors, which is among the highest values for stretchable semiconductors characterized by conventional rigid devices so far. In addition, top mechanical performance with a fracture strain of 446 ± 35% and an elastic recovery higher than 90% in the strain range of 100–150% is realized at the same time. Notably, the excellent elasticity enabled the nanofilm’s long cycling life of up to 5000 cycles at a 100% strain, which is by far the longest cycling life at such a large strain, demonstrating its potential for practical application for wearable electronics.

polymer science
Stretchable polymer composites with ultrahigh piezoelectric performance

Tongxiang Tang,Zhonghui Shen,Jian Wang,Shiqi Xu,Jiaxi Jiang,Jiahui Chang,Mengfan Guo,Youjun Fan,Yao Xiao,Zhihao Dong,Houbing Huang,Xiaoyan Li,Yihui Zhang,Danyang Wang,Long-Qing Chen,Ke Wang,Shujun Zhang,Ce-Wen Nan,Yang Shen

DOI: https://doi.org/10.1093/nsr/nwad177

IF: 20.6

2023-06-22

National Science Review

Abstract:Abstract Flexible piezoelectric materials withstanding large deformation play key roles in flexible electronics. Ferroelectric ceramics with high piezoelectric coefficient are inherently brittle, whereas polar polymers exhibit low piezoelectric coefficient. Here we report a highly stretchable/compressible piezoelectric composite composed of ferroelectric ceramic skeleton, elastomer matrix and relaxor ferroelectric-based hybrid at the ceramic/matrix interface as dielectric transition layers, exhibiting a giant piezoelectric coefficient of 250 picometers per volt, high electromechanical coupling factor keff of 65%, ultralow acoustic impedance of 3MRyl and high cyclic stability under 50% compression strain. The superior flexibility and piezoelectric properties are attributed to the electric polarization and mechanical load transfer paths formed by the ceramic skeleton, and the dielectric mismatch mitigation between ceramic fillers and elastomer matrix by the dielectric transition layer. The synergistic fusion of ultrahigh piezoelectric properties and superior flexibility in these polymer composites is expected to drive emerging applications in flexible smart electronics.

multidisciplinary sciences
Molecular Design of Stretchable Polymer Semiconductors: Current Progress and Future Directions.

Yu-Qing Zheng,Song Zhang,Zhenan Bao,J. B. Tok

DOI: https://doi.org/10.1021/jacs.2c00072

IF: 15

2022-03-09

Journal of the American Chemical Society

Abstract:Stretchable polymer semiconductors have advanced rapidly in the past decade as materials required to realize conformable and soft skin-like electronics become available. Through rational molecular-level design, stretchable polymer semiconductor films are now able to retain their electrical functionalities even when subjected to repeated mechanical deformations. Furthermore, their charge-carrier mobilities are on par with the best flexible polymer semiconductors, with some even exceeding that of amorphous silicon. The key advancements are molecular-design concepts that allow multiple strain energy-dissipation mechanisms, while maintaining efficient charge-transport pathways over multiple length scales. In this perspective article, we review recent approaches to confer stretchability to polymer semiconductors while maintaining high charge carrier mobilities, with emphasis on the control of both polymer-chain dynamics and thin-film morphology. Additionally, we present molecular design considerations toward intrinsically elastic semiconductors that are needed for reliable device operation under reversible and repeated deformation. A general approach involving inducing polymer semiconductor nanoconfinement allows for incorporation of several other desired functionalities, such as biodegradability, self-healing, and photopatternability, while enhancing the charge transport. Lastly, we point out future directions, including advancing the fundamental understanding of morphology evolution and its correlation with the change of charge transport under strain, and needs for strain-resilient polymer semiconductors with high mobility retention.

Medicine,Engineering,Physics,Materials Science
Strain-regulated Electronic Properties of Helical Polymer with Phenylacetylene Monomers—a First Principle Study

Yingjie Jiang,Xiaoding Wei

DOI: https://doi.org/10.1088/1361-651x/aca2ca

IF: 2.421

2022-01-01

Modelling and Simulation in Materials Science and Engineering

Abstract:Helical polymers, a class of organic polymers with a unique spring-like structure, possess interesting electronic configurations and axial quantum transport properties thanks to the tunable interlayer electronic interaction by strain engineering. In this report, we carried out first-principle calculations to investigate the electronic structures and transport properties of the helical polymer with phenylacetylene monomers under compressive strains. The band structures of the material show a remarkable semiconductor-to-metal phase transition and enhanced electronic dispersion caused by the great interlayer coupling when subjected to an increasing compressive strain. During compression, the conduction band minimum and valence band maximum gradually move closer to the Fermi level and eventually pass through the Fermi surface. Moreover, under large strains, a notable overlap between interlayer electron clouds makes an effective channel for the axial electron transmission, explaining the greatly improved charge transport properties. This improvement is mainly due to the formation of the interlayer transmission channels through sigma bonds. Our findings on the strain-regulated electronic properties of helical polymers suggest there are great potential applications of these materials in high-performance sensors and flexible electronic devices.

Sugar cane and ethanol: Drink the best and drive the rest

Mechanically and Thermally Guided, Honeycomb-like Nanocomposites with Strain-Insensitive High Thermal Conductivity for Stretchable Electronics

Orientation-dependent Large Plasticity of Single-Crystalline Gallium Selenide

Stretchable silicon electronics and their integration with rubber, plastic, paper, vinyl, leather and fabric substrates

An Intrinsically Stretchable High‐Performance Polymer Semiconductor with Low Crystallinity

Inorganic Semiconducting Materials for Flexible and Stretchable Electronics

Stretchable, Curvilinear Electronics Based on Inorganic Materials

Stretchable and Foldable Silicon Integrated Circuits

Mechanics of stretchable inorganic electronic materials

High elasticity of CsPbBr 3 perovskite nanowires for flexible electronics

Van der Waals semiconductor InSe plastifies by phase transformation

Ductile inorganic semiconductors for deformable electronics

Van der Waals semiconductor InSe plastifies by martensitic transformation

Tuning Conjugated Polymer Chain Packing for Stretchable Semiconductors

Wafer-scale Integration of Stretchable Semiconducting Polymer Microstructures Via Capillary Gradient

Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe

Materials and noncoplanar mesh designs for integrated circuits with linear elastic responses to extreme mechanical deformations

Elastic Semiconductor Blends with High Strain Cycling Durability Using an Oligothiophene-Based Multiblock Polyurethane Matrix

Stretchable polymer composites with ultrahigh piezoelectric performance

Molecular Design of Stretchable Polymer Semiconductors: Current Progress and Future Directions.

Strain-regulated Electronic Properties of Helical Polymer with Phenylacetylene Monomers—a First Principle Study