Ophthalmologic manifestations of granulocytic sarcoma (myeloid sarcoma or chloroma). The third Pan American Association of Ophthalmology and American Journal of Ophthalmology Lecture.

L. Zimmerman,R. L. Font

DOI: https://doi.org/10.1016/0002-9394(75)90326-8

1975-12-01

Abstract:

What problem does this paper attempt to address?

High-mobility hydrogenated polycrystalline In2O3 (In2O3:H) thin-film transistors

Yusaku Magari,Taiki Kataoka,Wenchang Yeh,Mamoru Furuta

DOI: https://doi.org/10.1038/s41467-022-28480-9

IF: 16.6

2022-02-28

Nature Communications

Abstract:Abstract Oxide semiconductors have been extensively studied as active channel layers of thin-film transistors (TFTs) for electronic applications. However, the field-effect mobility ( μ FE ) of oxide TFTs is not sufficiently high to compete with that of low-temperature-processed polycrystalline-Si TFTs (50–100 cm 2 V −1 s −1 ). Here, we propose a simple process to obtain high-performance TFTs, namely hydrogenated polycrystalline In 2 O 3 (In 2 O 3 :H) TFTs grown via the low-temperature solid-phase crystallization (SPC) process. In 2 O 3 :H TFTs fabricated at 300 °C exhibit superior switching properties with μ FE = 139.2 cm 2 V −1 s −1 , a subthreshold swing of 0.19 Vdec −1 , and a threshold voltage of 0.2 V. The hydrogen introduced during sputter deposition plays an important role in enlarging the grain size and decreasing the subgap defects in SPC-prepared In 2 O 3 :H. The proposed method does not require any additional expensive equipment and/or change in the conventional oxide TFT fabrication process. We believe these SPC-grown In 2 O 3 :H TFTs have a great potential for use in future transparent or flexible electronics applications.

multidisciplinary sciences
Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived HfO2 Thin Films by TiO2 Incorporation

J. W. Zhang,G. He,L. Zhou,H. S. Chen,X. S. Chen,X. F. Chen,B. Deng,J. G. Lv,Z. Q. Sun

DOI: https://doi.org/10.1016/j.jallcom.2014.05.074

IF: 6.2

2014-01-01

Journal of Alloys and Compounds

Abstract:TiO2-doped HfO2 gate dielectric thin films have been deposited on Si(100) substrates by RF sputtering. The component, morphology, structure, optical and interfacial properties of Hf-1 xTixO2 films related to TiO2 concentration are systematically investigated by atomic force microscope (AFM), X-ray diffraction (XRD), spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and Fourier transformation infrared (FTIR). By employing Cauchy-Urbach model, the optical constants, such as refractive index (n), extinction coefficient (k), absorption coefficient (alpha), and optical band gap (E-g) have been determined precisely. Measurements from XRD have confirmed that TiO2 incorporating into HfO2 films leads to the increase of the crystallization temperature of HfO2 films with increasing the TiO2 concentration. SE analyses have indicated that reduction in band gap and refractive index has been observed with increasing the TiO2 component in Hf-1 xTixO2 films. The increase in Urbach parameter E-U with the increase of TiO2 concentration also suggests the rise in disorder for Hf-1 xTixO2 films. FTIR measurements for Hf-1 xTixO2/Si gate stack indicate the existence of the interfacial layer regardless of the TiO2 concentration. For the 9% TiO2-doped HfO2 samples, the shift in FTIR characteristic peak suggests the formation of the silicate layer, which leads to the suppressed interfacial layer growth during deposition. As a result, it can be conclude that the TiO2 component in Hf-1 xTixO2 films should be controlled precisely to guarantee interfacial properties of Hf-1 xTixO2/Si gate stacks. (C) 2014 Elsevier B.V. All rights reserved.
High-Performance Polycrystalline Sige Thin-Film Transistors Using Al2o3 Gate Insulators

ZH Jin,HS Kwok,M Wong

DOI: https://doi.org/10.1109/55.735760

IF: 4.8157

1998-01-01

IEEE Electron Device Letters

Abstract:The use of aluminum oxide as the gate insulator for low temperature (600 degrees C) polycrystalline SiGe thin-film transistors (TFT's) has been studied. The aluminum oxide was sputtered from a pure aluminum target using a reactive N2O plasma. The composition of the deposited aluminum oxide was found to be almost stoichiometric (i.e., Al2O3), with a very small fraction of nitrogen incorporation. Even without any hydrogen passivation, good TFT performance was measured on devices with 50-nm-thick Al2O3 gate dielectric layers. Typically, a field effect mobility of 47 cm(2)/Vs, a threshold voltage of 3 V, a subthreshold slope of 0.44 V/decade, and an on/off ratio above 3 x 10(5) at a drain voltage of 0.1 V can be obtained, These results indicate that the direct interface between the Al2O3 and the SiGe channel layer is sufficiently passivated to make Al2O3 a better alternative to grown or deposited SiO2 for SiGe field effect devices.
Sputtering-Deposited Hafnium Oxide Dielectric for High-Performance InGaZnO Thin Film Transistors

Meng Li,Jun-Chen Dong,Qi Li,De-Dong Han,Zhi-Nong Yu,Yi Wang,Xing Zhang

DOI: https://doi.org/10.1109/icsict49897.2020.9278130

2020-01-01

Abstract:We fabricate InGaZnO thin film transistors (IGZO TFTs) on glass substrates, where sputtering-deposited hafnium oxide (HfO 2 ) films are utilized as the gate dielectric. The influences of Ar/O 2 flux ratio (75/25, 80/20, 85/15, and 90/10) of the HfO 2 films on properties of the IGZO TFTs are investigated. The 85/15 IGZO TFTs show the best performance among all the devices, which manifests as a field-effect mobility of 4.79 cm 2 V -1 s -1 , a saturation mobility of 6.81 cm 2 V -1 s -1 , an on-to-off current ratio over 10 6 , and a sub-threshold swing of 156.15 mV/decade. By exploring material components, we found that the 85/15 HfO 2 film has the least oxygen defects, thus resulting in more ideal stoichiometry and device performance. This work confirms the huge potential of sputtering-deposited HfO 2 films to be the high-κ dielectric of the IGZO TFTs.
Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InO x:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors

Taiki Kataoka,Yusaku Magari,Hisao Makino,Mamoru Furuta

DOI: https://doi.org/10.3390/ma15010187

2021-12-27

Abstract:We successfully demonstrated a transition from a metallic InOx film into a nondegenerate semiconductor InOx:H film. A hydrogen-doped amorphous InOx:H (a-InOx:H) film, which was deposited by sputtering in Ar, O2, and H2 gases, could be converted into a polycrystalline InOx:H (poly-InOx:H) film by low-temperature (250 °C) solid-phase crystallization (SPC). Hall mobility increased from 49.9 cm2V-1s-1 for an a-InOx:H film to 77.2 cm2V-1s-1 for a poly-InOx:H film. Furthermore, the carrier density of a poly-InOx:H film could be reduced by SPC in air to as low as 2.4 × 1017 cm-3, which was below the metal-insulator transition (MIT) threshold. The thin film transistor (TFT) with a metallic poly-InOx channel did not show any switching properties. In contrast, that with a 50 nm thick nondegenerate poly-InOx:H channel could be fully depleted by a gate electric field. For the InOx:H TFTs with a channel carrier density close to the MIT point, maximum and average field effect mobility (μFE) values of 125.7 and 84.7 cm2V-1s-1 were obtained, respectively. We believe that a nondegenerate poly-InOx:H film has great potential for boosting the μFE of oxide TFTs.
Thermal and Voltage Instabilities of Hafnium Oxide Films Prepared by Sputtering Technique

Hei Wong,B. L. Yang,Shurong Dong

DOI: https://doi.org/10.1016/j.microrel.2013.06.006

IF: 1.6

2013-01-01

Microelectronics Reliability

Abstract:Hafnium oxide (HfO2) films are not stable at a high-temperature thermal treatment and under high-field stressing. The thermally-induced instabilities might involve the formation of nanocrystalline phases, interface reactions, and out-diffusion of substrate silicon. Our results indicate that there exists an optimal thermal treatment temperature which compromises these effects and yields the best electrical properties of the HfO2 films. This observation has a high practical value in deciding the processing temperatures for MOS device fabrication using a high-k material as the gate dielectric film.
Nucleation and grain growth in low-temperature rapid solid-phase crystallization of hydrogen-doped indium oxide

Xiaoqian Wang,Yusaku Magari,Mamoru Furuta

DOI: https://doi.org/10.35848/1347-4065/ad21ba

IF: 1.5

2024-02-20

Japanese Journal of Applied Physics

Abstract:Nucleation and grain growth are discussed as a means of clarifying the mechanism of the rapid solid-phase crystallization (SPC) process of H2-doped amorphous indium oxide (InOx:H) films. H2-doping in InOx:H films reduced nucleation density at 250 °C from 4.1 to 1.1 μm−2, resulting in an increase in grain size and Hall mobility of the polycrystalline (poly)-InOx:H films. Lateral growth rate from the nucleus was estimated to be 220 nm min−1 for the InOx:H film at 250 °C. Thus, an amorphous InOx:H film could be converted to a poly-InOx:H film within 3 min owing to a fast lateral growth rate from the nucleus. Almost the same grain size, Hall mobility, and carrier density could be obtained from the poly-InOx:H films after annealing at 250 °C for only 3 min irrespective of the ramp rate. The results demonstrated the wide range of the processing window for SPC for poly-InOx:H films.

physics, applied
Effects of Hydrogen Doping on a-GIZO Thin-Film Transistors With Hafnium Dioxide Gate Insulators Formed by Atomic Layer Deposition at Different Temperatures

In-Soo Ahn,Byeong-Kwon Ju,Sung-Hwan Choi

DOI: https://doi.org/10.1109/ted.2024.3353700

IF: 3.1

2024-03-06

IEEE Transactions on Electron Devices

Abstract:This study investigates the impact of hydrogen doping on amorphous gallium-indium-zinc oxide (a-GIZO) thin-film transistors (TFTs) with hafnium dioxide (HfO2) gate insulators fabricated using atomic layer deposition (ALD) at two different temperatures (150 °C and 300 °C). To assess the influence of hydrogen doping, we fabricate a-GIZO TFTs with double-layer HfO2 gate insulators deposited at varying temperatures. The hydrogen concentration in the HfO2 thin film deposited at 150 °C is approximately 2.6 times higher than that in the film deposited at 300 °C, as determined by the measurements of hydrogen intensity using time-of-flight secondary ion mass spectrometry (TOF-SIMS). The mobility of GIZO TFTs with a single HfO2 gate insulator (300 °C–40 nm) is 3.41 cm2/ , whereas the mobility of GIZO TFTs with a double HfO2 (150 °C–10 nm)/HfO2 (300 °C–30 nm) gate insulator structure is significantly higher at 14.9 cm2/ . The corresponding threshold voltage ( ) values are 0.82 and 0.89 V, respectively. These differences are attributed to variations in hydrogen intensity between the HfO2 gate insulator deposits at 150 °C and 300 °C, as confirmed by TOF-SIMS. However, a distinct negative shift occurs under positive bias stress (PBS) conditions with increased hydrogen concentration. This anomaly results from excessive hydrogen doping within a single HfO2 gate insulator deposited at 150 °C, which negatively impacts reliability and mobility. This study not only verifies the enhanced electrical characteristics of GIZO TFT devices employing double HfO2 gate insulators with optimized film thicknesses deposited at both 150 °C and 300 °C, leveraging the hydrogen doping effect but also emphasizes the significance of controlled hydrogen concentration for optimal electrical performance and stability.

engineering, electrical & electronic,physics, applied
Realization of Tunable-Performance in Atomic Layer Deposited Hf-doped In2O3 Thin Film Transistor Via Oxygen Vacancy Modulation.

Jiyuan Zhu,Shen Hu,Bojia Chen,Shice Wei,Yu Zhang,Xuefeng Wu,Xingli Zou,Xionggang Lu,Qingqing Sun,David W. Zhang,Li Ji

DOI: https://doi.org/10.1063/5.0188101

IF: 4.304

2024-01-01

The Journal of Chemical Physics

Abstract:Due to the limitation of inherent ultra-high electron concentration, the electrical properties of In2O3 resemble those of conductors rather than semiconductors prior to special treatment. In this study, the effect of various annealing treatments on the microstructure, optical properties, and oxygen vacancies of the films and transistors is systematically investigated. Our finding reveals a progressive crystallization trend in the films with increasing annealing temperature. In addition, a higher annealing temperature is also associated with the reduction in the concentration of oxygen vacancies, as well as an elevation in both optical transmittance and optical bandgap. Furthermore, with the implementation of annealing process, the devices gradually transform from no pronounced gate control to exhibit with excellent gate control and electrical performances. The atomic layer deposited Hf-doped In2O3 thin film transistor annealed at 250 °C exhibits optimal electrical properties, with a field-effect mobility of 18.65 cm2 V−1 s−1, a subthreshold swing of 0.18 V/dec, and an Ion/Ioff ratio of 2.76 × 106. The results indicate that the impact of varying annealing temperatures can be attributed to the modulation of oxygen vacancies within the films. This work serves as a complementary study for the existing post-treatment of oxide films and provides a reliable reference for utilization of the annealing process in practical applications.
Bias Stress Stability of Solution-Processed Nano Indium Oxide Thin Film Transistor

Rihui Yao,Xiao Fu,Wanwan Li,Shangxiong Zhou,Honglong Ning,Biao Tang,Jinglin Wei,Xiuhua Cao,Wei Xu,Junbiao Peng

DOI: https://doi.org/10.3390/mi12020111

IF: 3.4

2021-01-22

Micromachines

Abstract:In this paper, the effects of annealing temperature and other process parameters on spin-coated indium oxide thin film transistors (In2O3-TFTs) were studied. The research shows that plasma pretreatment of glass substrate can improve the hydrophilicity of glass substrate and stability of the spin-coating process. With Fourier transform infrared (FT-IR) and X-ray diffraction (XRD) analysis, it is found that In2O3 thin films prepared by the spin coating method are amorphous, and have little organic residue when the annealing temperature ranges from 200 to 300 °C. After optimizing process conditions with the spin-coated rotating speed of 4000 rpm and the annealing temperature of 275 °C, the performance of In2O3-TFTs is best (average mobility of 1.288 cm2·V−1·s−1, Ion/Ioff of 5.93 × 106, and SS of 0.84 V·dec−1). Finally, the stability of In2O3-TFTs prepared at different annealing temperatures was analyzed by energy band theory, and we identified that the elimination of residual hydroxyl groups was the key influencing factor. Our results provide a useful reference for high-performance metal oxide semiconductor TFTs prepared by the solution method.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Effect of In-Situ H Doping on the Electrical Properties of In2O3 Thin-Film Transistors

Peixuan Hu,Zhixiang Gao,Lu Yang,Wanfa Li,Xiaohan Liu,Ting Li,Yujia Qian,Lingyan Liang,Yufang Hu,Hongtao Cao

DOI: https://doi.org/10.3390/electronics13081478

IF: 2.9

2024-04-13

Electronics

Abstract:In this article, this research demonstrates the influence of in-situ introduction of H2 into the working gas on the physical properties of post-annealed In2O3 thin films and the performance of associated devices. A gradual increase in the H2 ratio leads to improved film quality, as indicated by spectroscopic ellipsometry, X-ray photoelectron spectroscopy, and atomic force microscope analyses showing a reduction in defect states such as band-tail states and VO in the film, and a smoother surface morphology with the root mean square roughness approximately 0.446 nm. Furthermore, this hydrogen doping effect results in a distinct shift in the device's threshold voltage toward the positive direction, and an improvement in the field-effect mobility and subthreshold swing. Consequently, a high-performance In2O3:H TFT is developed, exhibiting a field-effect mobility of 47.8 cm2/Vs, threshold voltage of −4.1 V and subthreshold swing of 0.25 V/dec. These findings highlight the potential of in-situ H doping as a promising approach to regulate In2O3-based TFTs.

engineering, electrical & electronic,computer science, information systems,physics, applied
P‐1.11: High‐mobility ZnO thin‐film transistors with HfO2/Al2O3 bilayer dielectric

Qi Li,Junchen Dong,Jingyi Wang,Dengqin Xu,Dedong Han,Yi Wang

DOI: https://doi.org/10.1002/sdtp.16037

2022-01-01

SID Symposium Digest of Technical Papers

Abstract:We investigate high‐performance ZnO thin‐film transistors (TFTs) with a HfO2/Al2O3 bilayer high‐κ gate dielectric. The effects of atomic layer deposition process temperature (80, 100, 120, and 140 °C) of Al2O3 dielectric layer on device performance of ZnO TFTs are examined. When the process temperature is at 100 °C, the devices show the best electrical properties, such as a field‐effect mobility of 34.12 cm2/Vs, a subthreshold swing of 105.70 mV/decade, and an on‐off current ratio over 108. Besides, of all the devices, TFTs with 100 °C‐Al2O3 show the best stability with 0.2 and –0.1 V threshold voltage shift under positive and negative gate‐bias stress, which may probably due to the high‐quality interface between the active layer and dielectric layer. This work presents great potential of the ZnO TFTs in applications of advanced displays.
B lymphocyte expression of a recognition locus for human monocytes and macrophages.

D. Guerry,B. Dusak,A. Schreiber,R. A. Cooper

DOI: https://doi.org/10.4049/jimmunol.121.6.2446

1978-12-01

Abstract: Monocyte and macrophage interactions with other cell types are critical to certain immune responses. Such interactions usually require close physical contact between mononuclear phagocyte and target cell. We have explored the recognition (binding) of cultured human proliferative B lymphocytes by monocytes and macrophages. These studies demonstrate that monocytes have the capacity to recognize a variety of B lymphoblast and lymphoblastoid cell lines. This capacity is enhanced by the generation of macrophages in culture but does not extend to the PMN. Binding does not occur at 4°C and depends on the presence of either Ca or Mg ions. Normal peripheral blood lymphocytes, the B cells of chronic lymphocytic leukemia, mitogen-transformed T cells, and three T lymphoblast cell lines are not bound by monocytes. Recognition does not require identity at the histocompatibility locus, proceeding in allotypic as well as autologous situations. The recognition locus of proliferating B cells is trypsin sensitive and regenerable with incubation in the absence of serum. Regeneration of this structure is blocked by the protein synthetic inhibitor cycloheximide. B cell interaction with monocytes is not mediated by immunoglobulin G, by exogenously derived complement (C) or C3b or C3d from any source, by heterologous bovine antigens, by Epstein-Barr virus-determined antigens, or by currently defined, B cell-specific, cell-surface determinants. This locus may provide one means of initiating cell-cell interactions important in the host response to viral induced or neoplastic proliferation of B lymphocytes.
High-mobility and high-reliability Zn-incorporated amorphous In2O3-based thin-film transistors

Yuzhang Wu,Yusaku Magari,Prashant R. Ghediya,Yuqiao Zhang,Yasutaka Matsuo,Hiromichi Ohta

DOI: https://doi.org/10.35848/1347-4065/ad5ee6

IF: 1.5

2024-07-26

Japanese Journal of Applied Physics

Abstract:Polycrystalline indium oxide-based thin film transistors (In2O3 TFTs) have attracted considerable attention because of high field effect mobility (μFE ∼ 100 cm2 V−1 s−1). However, In2O3 TFTs exhibit poor reliability owing to the adsorption and/or desorption of gas molecules at the grain boundaries. The incorporation of Zn suppresses the crystallization of In2O3. Herein, we systematically studied the effect of Zn incorporation into In2O3 TFTs. The crystallization of In2O3 was suppressed when the Zn concentration ranged from 25% to 68%. Amorphous InZnO (IZO) TFTs with 25% Zn exhibited the highest μFE of 41 cm2 V−1 s−1 and excellent reliability. In contrast, polycrystalline IZO TFTs showed a low μFE <12 cm2 V−1 s−1 due to the formation of grain boundaries, and poor reliability after positive gate bias, mostly due to electron trapping at the polycrystalline/insulator interface. These results render an approach to realize In2O3 TFTs that show reasonably high μFE and excellent reliability.

physics, applied
Hydrogen-Doping-Enabled Boosting of the Carrier Mobility and Stability in Amorphous IGZTO Transistors

Jeonga Lee,Cheol Hee Choi,Taikyu Kim,Jaeseok Hur,Min Jae Kim,Eun Hyun Kim,Jun Hyung Lim,Youngho Kang,Jae Kyeong Jeong

DOI: https://doi.org/10.1021/acsami.2c18094

2022-12-28

Abstract:This study investigated the effect of hydrogen (H) on the performance of amorphous In-Ga-Zn-Sn oxide (a-In0.29Ga0.35Zn0.11Sn0.25O) thin-film transistors (TFTs). Ample H in plasma-enhanced atomic layer deposition (PEALD)-derived SiO2 can diffuse into the underlying a-IGZTO film during the postdeposition annealing (PDA) process, which affects the electrical properties of the resulting TFTs due to its donor behavior in the a-IGZTO. The a-In0.29Ga0.35Zn0.11Sn0.25O TFTs at the PDA temperature of 400 °C exhibited a remarkably higher field-effect mobility (μFE) of 85.9 cm2/Vs, a subthreshold gate swing (SS) of 0.33 V/decade, a threshold voltage (VTH) of -0.49 V, and an ION/OFF ratio of ∼108; these values are superior compared to those of unpassivated a-In0.29Ga0.35Zn0.11Sn0.25O TFTs (μFE = 23.3 cm2/Vs, SS = 0.36 V/decade, and VTH = -3.33 V). In addition, the passivated a-In0.29Ga0.35Zn0.11Sn0.25O TFTs had good stability against the external gate bias duration. This performance change can be attributed to the substitutional H doping into oxygen sites (HO) leading to a boost in ne and μFE. In contrast, the beneficial HO effect was barely observed for amorphous indium gallium zinc oxide (a-IGZO) TFTs, suggesting that the hydrogen-doping-enabled boosting of a-IGZTO TFTs is strongly related to the existence of Sn cations. Electronic calculations of VO and HO using density functional theory (DFT) were performed to explain this disparity. The introduction of SnO2 in a-IGZO is predicted to cause a conversion from shallow VO to deep VO due to the lower formation energy of deep VO, which is effectively created around Sn cations. The formation of HO by H doping in the IGZTO facilitates the efficient connection of atomic states forming the conduction band more smoothly. This reduces the effective mass and enhances the carrier mobility.
High mobility and productivity of flexible In2O3 thin-film transistors on polyimide substrates via atmospheric pressure spatial atomic layer deposition

Kwang Su Yoo,Chi-Hoon Lee,Dong-Gyu Kim,Su-Hwan Choi,Won-Bum Lee,Chang-Kyun Park,Jin-Seong Park

DOI: https://doi.org/10.1016/j.apsusc.2023.158950

IF: 6.7

2024-02-01

Applied Surface Science

Abstract:We fabricate In2O3 films using atmospheric pressure spatial atomic layer deposition (AP S-ALD) and investigate their properties at various temperatures (150 °C–225 °C). As the temperature increased, the growth per cycle (GPC) increases, with the GPC and refractive index reaching values of 1.33 and 2.02, respectively, at 225 °C. The In2O3 thin film indicates a reduction in carrier concentration from 1.53 ± 1.37 × 1021 to 3.09 ± 0.53 × 1020 cm−3 as the temperature increased, and a decrease in the resistance from 3.55 ± 0.07 × 10−3 to 3.70 ± 0.01 × 10−4 Ω∙cm, which is attributed to a decrease in the impurity concentration (150 °C: 1.5 at.%; 175 °C: 1.0 at.%; 200 °C: N/A; 225 °C: N/A) and an increase in crystallinity. We use the In2O3 film as a channel layer in a top-gate bottom-contact thin-film transistor (TG-BC TFT). The device shows excellent performance characteristics, including a field-effect mobility of 69.8 cm2/V·s, a threshold voltage of −0.06 ± 0.22 V, and a subthreshold swing of 0.16 ± 0.01 V/decade. We successfully fabricated high-mobility TFTs and demonstrated their reliability via bias and 50,000 bending tests. The high-performance channel layer of the TFTs fabricated using AP S-ALD are promising for flexible applications.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor

Yunyong Nam,Hee-Ok Kim,Sung Haeng Cho,Chi-Sun Hwang,Taeho Kim,Sanghun Jeon,Sang-Hee Ko Park

DOI: https://doi.org/10.1080/15980316.2016.1160003

2016-04-02

Journal of Information Display

Abstract:Described herein is the role of hydrogen in aluminum oxide (Al2O3) gate dielectrics in amorphous indium–gallium–zinc oxide (a-InGaZnO or a-IGZO) thin-film transistors (TFTs). Compared to a-IGZO TFTs with a low-temperature (150°C) Al2O3 gate dielectric, a-IGZO devices with a high-temperature (250–300°C) Al2O3 gate dielectric exhibit poor transistor characteristics, such as low mobility, a high subthreshold slope, and huge hysteresis. Through DC and short-pulsed current–voltage (I–V) measurements, it was revealed that the degradation of the transistor performance stems from the charging and discharging phenomenon at the interface traps located in the interface between the a-IGZO semiconductor and the Al2O3 gate insulator. It was found that the low-temperature Al2O3 atomic layer deposition processed film contains a higher density of hydrogen atoms compared to high-deposition-temperature films. The study results show that a high concentration of hydrogen atoms can passivate the defect sites in the interface and bulk, which produces excellent transistor characteristics. This study demonstrated that hydrogen has a beneficial effect on the defect passivation for oxide TFTs.

materials science, multidisciplinary
Beneficial Hydrogen Doping in Single Spinel Phase Crystallized IZTO Thin-Film Transistors

Gwang-Bok Kim,Taikyu Kim,Jinwon Bak,Cheol Hee Choi,Sang Won Chung,Youngho Kang,Jae Kyeong Jeong

DOI: https://doi.org/10.1109/led.2024.3441618

IF: 4.8157

2024-10-04

IEEE Electron Device Letters

Abstract:This study demonstrates different hydrogen (H) behavior in InZnSnO (IZTO) semiconductor depending on its crystalline structure. H-doped single spinel phase-IZTO (c-IZTO) thin-film transistors (TFTs) show exceptional device performances, with field-effect mobility of cm2/Vs, threshold voltage ( of V, and subthreshold swing of mV/dec. Moreover, remarkable reliability with shift ( V against external harsh bias temperature stresses is revealed in the c-IZTO TFTs, which is quite different from H-doped amorphous IZTO (a-IZTO) TFTs showing significant shift of +2.2 (-3.5) V under positive (negative) bias temperature stress. This considerably higher reliability in the c-IZTO TFTs could be attributed to inhibited local transition of substitutional H by crystallization, unlike the a-IZTO TFTs, which were supported by density functional theory calculations.

engineering, electrical & electronic
High Mobility Thin-Film Transistor with Solution-Processed Hafnium-Oxide Dielectric and Zinc-Indium-Tin-Oxide Semiconductor

Zhu Le-Yong,Gao Ya-Na,Zhang Jian-Hua,Li Xi-Feng

DOI: https://doi.org/10.7498/aps.64.168501

IF: 0.906

2015-01-01

Acta Physica Sinica

Abstract:In this paper, bottom-gate-top-contact structured thin-film transistors (TFTs) are fabricated by solution-processing of hafnium oxide (HfO2) dielectrics and zinc-indium-tin-oxide (ZITO) semiconductors. Solution-processed HfO2 films are annealed at different temperatures, and the 500℃ annealed HfO2 dielectrics can exhibit optimizing film properties such as smooth surfaces (the RMS value of HfO2 films is less than 1 nm), low leakage current density (1.25×10-7 A/cm2 at 1 MV/cm), high transmittance (above 80% at the wavelength ranging from 400 to 800 nm) and high relative dielectric constant (about 12). The smooth surface of HfO2 dielectrics is attributed to the decreased charge trapping states at the interface between the HfO2 dielectrics and ZITO semiconductors, and thus improves the device electrical performance and stability. Hence, TFT devices of HfO2 dielectrics annealed at 500℃ show a high saturated field effect mobility of more than 100 cm2·V-1·s-1 a low threshold voltage of -0.5 V, an on-to-off current ratio of 5×106 and a small subthreshold swing of 105 mV/dec. An almost negligible threshold voltage shift is observed under a positive bias stress for 1000 s, indicating the excellent stability of HfO2 TFT devices.
Key Sputtering Parameters for Precursor In 2 O 3 Films to Achieve High Carrier Mobility

Junichi Nomoto,Takashi Koida,Iwao Yamaguchi,Tomohiko Nakajima

DOI: https://doi.org/10.1021/acsami.4c09669

IF: 9.5

2024-11-01

ACS Applied Materials & Interfaces

Abstract:Owing to their extremely high carrier mobility (μ) of >100 cm2/(V s) and suitable low carrier concentrations, transparent conducting films of solid-phase crystallized H-doped In(2)O(3) (spc-IO:H) exhibit high conductivity with high optical transparency over a broad frequency range. These properties can be attributed to solid-phase crystallization of the amorphous precursor film. Therefore, the development of high-quality spc-IO:H films requires the deposition conditions of the precursor films to...

materials science, multidisciplinary,nanoscience & nanotechnology

Ophthalmologic manifestations of granulocytic sarcoma (myeloid sarcoma or chloroma). The third Pan American Association of Ophthalmology and American Journal of Ophthalmology Lecture.

High-mobility hydrogenated polycrystalline In2O3 (In2O3:H) thin-film transistors

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived HfO2 Thin Films by TiO2 Incorporation

High-Performance Polycrystalline Sige Thin-Film Transistors Using Al2o3 Gate Insulators

Sputtering-Deposited Hafnium Oxide Dielectric for High-Performance InGaZnO Thin Film Transistors

Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InO x:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors

Thermal and Voltage Instabilities of Hafnium Oxide Films Prepared by Sputtering Technique

Nucleation and grain growth in low-temperature rapid solid-phase crystallization of hydrogen-doped indium oxide

Effects of Hydrogen Doping on a-GIZO Thin-Film Transistors With Hafnium Dioxide Gate Insulators Formed by Atomic Layer Deposition at Different Temperatures

Realization of Tunable-Performance in Atomic Layer Deposited Hf-doped In2O3 Thin Film Transistor Via Oxygen Vacancy Modulation.

Bias Stress Stability of Solution-Processed Nano Indium Oxide Thin Film Transistor

Effect of In-Situ H Doping on the Electrical Properties of In2O3 Thin-Film Transistors

P‐1.11: High‐mobility ZnO thin‐film transistors with HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> bilayer dielectric

B lymphocyte expression of a recognition locus for human monocytes and macrophages.

High-mobility and high-reliability Zn-incorporated amorphous In2O3-based thin-film transistors

Hydrogen-Doping-Enabled Boosting of the Carrier Mobility and Stability in Amorphous IGZTO Transistors

High mobility and productivity of flexible In2O3 thin-film transistors on polyimide substrates via atmospheric pressure spatial atomic layer deposition

Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor

Beneficial Hydrogen Doping in Single Spinel Phase Crystallized IZTO Thin-Film Transistors

High Mobility Thin-Film Transistor with Solution-Processed Hafnium-Oxide Dielectric and Zinc-Indium-Tin-Oxide Semiconductor

Key Sputtering Parameters for Precursor In 2 O 3 Films to Achieve High Carrier Mobility