Abstract:Owing to their extremely high carrier mobility (μ) of >100 cm2/(V s) and suitable low carrier concentrations, transparent conducting films of solid-phase crystallized H-doped In(2)O(3) (spc-IO:H) exhibit high conductivity with high optical transparency over a broad frequency range. These properties can be attributed to solid-phase crystallization of the amorphous precursor film. Therefore, the development of high-quality spc-IO:H films requires the deposition conditions of the precursor films to...

Key Sputtering Parameters for Precursor In 2 O 3 Films to Achieve High Carrier Mobility