The trouble with Billroth II is.

J. Jesseph

DOI: https://doi.org/10.1016/S0002-9610(74)80023-1

1974-11-01

Abstract:

What problem does this paper attempt to address?

Near-infrared Absorption–emission Cross-Sections of PbSe Quantum Dots Doped in UV Gel

Cheng,Yinhui Xu,Xiaoyu Cheng

DOI: https://doi.org/10.1016/j.optcom.2015.02.034

IF: 2.4

2015-01-01

Optics Communications

Abstract:We measure near-infrared absorption spectra of PbSe quantum dots (QDs) with three sizes (4.5, 5.0, and 5.6nm) doped in UV gel with the concentration of 0.25–1.50mgmL−1 by using an absorption-spectrum method. An empirical formula is proposed to describe the correlation of the first–second absorption-peak wavelengths and QD size. The peak-absorption cross-section is measured as 2.76–3.69×10−16cm2 for 5.6-nm QD, and the absorption coefficient ranges in 0.19–0.59cm−1, both associated with the doping concentration and the QD size. Furthermore, the emission cross-sections are determined by measuring the photoluminescence spectra of QDs and using the McCumber relationship, which depend weakly on both the doping concentration and the QD size. For 5.6-nm QD, the measured peak-emission cross-section is 3.36–4.48×10−16cm2 within the range of experimental doping concentration.
Pb‐Doped Ag 2 Se Quantum Dots with Enhanced Photoluminescence in the NIR‐II Window

Mengxuan Yu,Xiaohu Yang,Yejun Zhang,Hongchao Yang,Haoying Huang,Zan Wang,Jinyi Dong,Rong Zhang,Ziqiang Sun,Chunyan Li,Qiangbin Wang

DOI: https://doi.org/10.1002/smll.202006111

IF: 13.3

2021-02-01

Small

Abstract:Ag2Se quantum dots (QDs) as an effective biological probe in the second near‐infrared window (NIR‐II, 1000–1700 nm) have been widely applied in bioimaging with high tissue penetration depth and high spatiotemporal resolution. However, the ions deficiency and crystal defects caused by the high Ag+ mobility in Ag2Se crystals are mainly responsible for the inefficient photoluminescence (PL) of Ag2Se QDs. Herein, a tailored route is reported to achieve controllable doping of Ag2Se QDs in which Ag is exchanged by Pb via cation exchange (CE), which is unattainable by direct synthetic methods. The Pb‐doped Ag2Se QDs (denoted as Pb:Ag2Se QDs) present fire‐new optical features with significantly enhanced PL intensity of 4.2 folds. Photoelectron spectroscopy confirms that Pb acts as an n‐type dopant for Ag2Se QDs and therefore the electronic impurities provide additional carriers to fill the traps. Moreover, the general validity of this method is demonstrated to convert different sized Ag2Se into Pb:Ag2Se QDs, so that a wide range of NIR‐II PL with high intensity is obtained. The bright NIR‐II emission of Pb:Ag2Se QDs is further successfully performed in lymphatic system mapping.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Iodide capped PbS/CdS core-shell quantum dots for efficient long-wavelength near-infrared light-emitting diodes

Xuyong Yang,Fuqiang Ren,Yue Wang,Tao Ding,Handong Sun,Dongling Ma,Xia Wei Sun

DOI: https://doi.org/10.1038/s41598-017-15244-5

IF: 4.6

2017-11-07

Scientific Reports

Abstract:PbS based quantum dots (QDs) have been studied in great detail for potential applications in electroluminescent devices operating at wavelengths important for telecommunications (1.3–1.6 μm). Despite the recent advances in field of quantum dot light-emitting diode (QLED), further improvements in near-infrared (NIR) emitting device performance are still necessary for the widespread use and commercialization of NIR emitting QLED technology. Here, we report a high-performance 1.51-μm emitting QLED with inverted organic–inorganic hybrid device architecture and PbS/CdS core-shell structured quantum dots as emitter. The resultant QLEDs show a record device performance for the QLEDs in 1.5 μm emission window, with a maximum radiance of 6.04 Wsr−1 m−2 and peak external quantum efficiency (EQE) of 4.12%, respectively.

multidisciplinary sciences
An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

Xiaokun Fan,Zhen Mu,Zhao Chen,Yunfeng Zhan,Fanyuan Meng,Yang Li,Guichuan Xing,Wai-Yeung Wong

DOI: https://doi.org/10.1016/j.cej.2023.142027

IF: 15.1

2023-01-01

Chemical Engineering Journal

Abstract:Near 100% photoluminescence quantum yield (PL QY) is the first target for designing luminescent quantum dots (QDs). Here, an alloyed QD with a core/shell structure of Cd0.194Zn0.806Se0.406S0.594/ZnS is synthesized and characterized by the feature of large core size (about 10 nm) and thin shell (around three ZnS monolayers). It exhibits an efficient green emission with the PL QY of 99.8% and ultra-fast radiative transition rate (kr) of 4.16 x 107 s-1. It demonstrates that the excited state will be rapidly decayed to its ground state through a radiative channel and less vulnerable to non-radiative processes. Under a high pump intensity (254.65 mu J cm - 2), the Cd0.194Zn0.806Se0.406S0.594/ZnS QD still owns a long biexciton decay lifetime (tau xx) of 1.05 ns and high biexciton QYxx of 25.1%, corresponding to a suppressed non-radiative Auger recombination. The Cd0.194Zn0.806Se0.406S0.594/ZnS QD based light-emitting diode exhibits a peak external quantum efficiency of 20.1% and brightness of over105 cd m-2 at 5.2 V. We believe that the Cd0.194Zn0.806Se0.406S0.594/ZnS QD not only provides a near-unity QY but also ensures its QD based light-emitting diode (QLED) with an excellent performance, which could be an excellent QD material for QLED applications.
Review Body's Report

M. Stein

DOI: https://doi.org/10.1136/bmj.2.5707.485-g

1970-05-23

British Medical Journal

Abstract:
White light-emitting quantum dot diodes and tuning of luminescence processes

Bozhi Liu,Ruifeng Li,Lian Hu,Huizhen Wu

DOI: https://doi.org/10.1007/s00339-014-8465-5

2014-01-01

Applied Physics A

Abstract:A novel white light-emitting diode based on a large Stokes shift (~200 nm) and using pure green light-emitting CdSeS quantum dots (QDs) with an Ag/ZnSnO/QDs/spiro-TPD/ITO structure has been fabricated in which ZnSnO and spiro-TPD are served as the electron and hole transport layer, respectively. The large Stokes shift of the CdSeS QDs excludes potentially Förster resonance energy transfer process, which allows spiro-TPD to act as both an emitter and hole transport layer. The devices exhibit a wide EL spectrum consisting of three components: blue emission from spiro-TPD, green emission from QD band–band recombination, and red emission from QD surface-state recombination. We further found that as the intensity ratios among these three components vary with bias the color of the QD light-emitting diodes is tunable. The device displays a good white light-emitting characteristic with CIE coordinates of (0.281, 0.384) at an appropriate bias.
Colloidal Alloyed Quantum Dots with Enhanced Photoluminescence Quantum Yield in the NIR-II Window

Hongchao Yang,Renfu Li,Yejun Zhang,Mengxuan Yu,Zan Wang,Xi Liu,Wenwu You,Datao Tu,Ziqiang Sun,Rong Zhang,Xueyuan Chen,Qiangbin Wang

DOI: https://doi.org/10.1021/jacs.0c13071

IF: 15

2021-02-05

Journal of the American Chemical Society

Abstract:Semiconductor quantum dots (QDs) with photoluminescence (PL) emission at 900–1700 nm (denoted as the second near-infrared window, NIR-II) exhibit much-depressed photon absorption and scattering, which has stimulated extensive researches in biomedical imaging and NIR devices. However, it is very challenging to develop NIR-II QDs with a high photoluminescence quantum yield (PLQY) and excellent biocompatibility. Herein, we designed and synthesized an alloyed silver gold selenide (AgAuSe) QD with a bright emission from 820 to 1170 nm and achieved a record absolute PLQY of 65.3% at 978 nm emission among NIR-II QDs without a toxic element and a long lifetime of 4.58 μs. It is proved that the high PLQY and long lifetime are mainly attributed to the prevented nonradiative transition of excitons, probably resulted from suppressing cation vacancies and crystal defects from the high mobility of Ag ions by alloying Au atoms. These high-PLQY QDs with nontoxic heavy metal exhibit great application potential in bioimaging, light emitting diodes (LEDs), and photovoltaic devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/jacs.0c13071?goto=supporting-info">https://pubs.acs.org/doi/10.1021/jacs.0c13071</a>.Discussions of chemicals, synthesis methods, and characterization methods used, figures of EDS spectrum, size distribution histograms, powder XRD patterns, XPS spectra, UV–vis-NIR absorption, UPS spectra, calculated band-level positions based on UPS, PL lifetime, temperature-dependent PL spectra and corresponding integrated PL intensities, two-dimensional pseudocolour map of TA spectra, TA spectra, kinetic traces, model of possible exciton recombination processes, TEM images, and absolute PLQY, and tables of PLQY of AgAuSe QDs and some typical Pb/Cd/As-free NIR-II QDs, fitted parameters of kinetic traces, and experimental details of preparation of Ag2Se QDs with different diameters (<a class="ext-link" href="/doi/suppl/10.1021/jacs.0c13071/suppl_file/ja0c13071_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

chemistry, multidisciplinary
Visible and Near-Infrared, Multiparametric, Ultrasensitive Nanothermometer Based on Dual-Emission Colloidal Quantum Dots

Jiabin Liu,Hui Zhang,Gurpreet Singh Selopal,Shuhui Sun,Haiguang Zhao,Federico Rosei

DOI: https://doi.org/10.1021/acsphotonics.9b00763

IF: 7

2019-01-01

ACS Photonics

Abstract:Dual-emission nanothermometers with the capability of precise measurement combined with high spatial resolution at the micro- and nanoscale could represent a powerful tool in several areas of technology such as microelectronics, microscale optics, photonics, microfluidics, and biomedical engineering. However, most such nanothermometers reported so far exhibit two distinct emissions located within the visible spectrum region, which limits their application potential. Here we reported a visible and near-infrared (NIR) dual-emission nanothermometer based on PbS/CdS/CdSe core/barrier/shell quantum dots (QDs). The ratiometric response of the two isolated photoluminescence (PL) peak integrated areas located at around 670 and 910 nm (corresponding to CdSe and PbS in core/barrier/shell structure, respectively) are found to be markedly temperature-dependent in the 180-300 K range with a thermal sensitivity of 1.22% K-1. In addition, the lifetime (PbS and CdSe) and PL peak shifts (PbS) exhibit a linear dependence on temperature. Multiple independent estimates of temperature could facilitate self-calibrations and enhance the accuracy of measurements. Our results evidence the great potential of visible and NIR luminescence nanothermometers based on dual-emission PbS/CdS/CdSe QDs for several technologies.
Highly Monodisperse PbS Quantum Dots with Facet Engineering for High-Radiance Light-Emitting Diodes in the NIR-II Window

Manman Gong,Fei Li,Lei Wang,Qiulei Xu,Zhenghui Wu,Huaibin Shen,Lin Song Li,Zuliang Du

DOI: https://doi.org/10.1021/acsphotonics.2c01228

IF: 7

2022-12-29

ACS Photonics

Abstract:Solution-processed PbS quantum dot light-emitting diodes (QLEDs) with emission in the second near-infrared window (NIR-II, 1100–1700 nm) are excellent candidates as light sources for optical communication, night vision, and biomedical monitoring. However, it is still a tremendous challenge to achieve high-radiance PbS QLEDs due to serious QD surface traps and unbalanced charge injection. Herein, highly monodisperse PbS QDs with tailored facet growth were successfully synthesized by the continuous precursor injection method. The synthesized PbS QDs revealed a tunable absorption peak from 1200 to 1700 nm with a supernarrow full width at half-maximum (fwhm; <105 nm). The tailored surface facet growth effectively decreased the nonpolar (100) facet and surface defects. Furthermore, with a multilayered organic–inorganic hybrid architecture of indium tin oxide (ITO)/poly(ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS)/poly(9,9-dioctylfluorene-co-N-(4-(3-methylpropyl))-diphenylamine) (TFB)/PbS QDs/ZnO/Al, the novel infrared PbS QLED exhibited an excellent maximum radiance of 16.14 W sr–1 m–2 at 6.15 V with a shortwave-infrared electroluminescence at ∼1530 nm. Importantly, the NIR-II QLEDs using facet-tailored PbS QDs with the EL peak between 1100 and 1700 nm represented extremely high radiances. The excellent performances are ascribed to the passivated PbS QDs with a tailored surface facet and the hybrid device structure for charge injection balance. This work provides an effective approach for the preparation of high-quality PbS QDs and is expected to significantly boost the potential commercial applications of PbS NIR-II QLEDs.

physics, condensed matter,optics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
Near-infrared quantum dot light emitting diodes employing electron transport nanocrystals in a layered architecture

Wenjia Hu,Ron Henderson,Yu Zhang,Guanjun You,Lai Wei,Yangbo Bai,Jingkang Wang,Jian Xu

DOI: https://doi.org/10.1088/0957-4484/23/37/375202

IF: 3.5

2012-08-24

Nanotechnology

Abstract:PbSe quantum dot light emitting diodes (QD-LEDs) of a multi-layer architecture are reported in the present work to exhibit high external quantum efficiencies. In these devices, a ligand replacement technique was employed to activate PbSe QDs, and ZnO nanoparticles were used for the electron transport layer. The emission wavelength of this solution processed device is QD size tunable over a broad spectral range, and an LED efficiency of 0.73% was measured at 1412 nm. Higher efficiencies at longer wavelengths are also inferred from spectral characterization.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Enhanced Tunable Dual Emission of Cu:InP/ZnS Quantum Dots Enabled by Introducing Ag Ions

Xian Wei,Shiliang Mei,Guilin Zhang,Danlu Su,Fengxian Xie,Wanlu Zhang,Ruiqian Guo

DOI: https://doi.org/10.1016/j.apsusc.2019.06.059

IF: 6.7

2019-01-01

Applied Surface Science

Abstract:Transition metal ions doping has been an effective method to optimize the optical properties of quantum dots (QDs) and attracted much interest in recent years. In this work, Cu doped InP/ZnS (Cu:InP/ZnS) QDs have been synthesized via a nucleation-doping method and exhibit dual emission which consists of the intrinsic emission and the dopant emission. With the incremental Cu concentration from 0% to 10%, the dopant emission could be largely tuned from 598 to 707 nm. After introducing Ag ions into Cu:InP/ZnS QDs, the photoluminance (PL) intensity of dual emission gets remarkably enhanced with a PL quantum yield (QY) of 79%, while the emission peak positions change marginally. Through X-ray photoelectron spectroscopy, steady-state and time-resolved PL spectroscopy measurement, it can be concluded that the dopant emission color is mainly dominated by Cu while Ag is conducive to improve the dual emission of Cu and Ag co-doped InP/ZnS QDs. These results would contribute to further understanding dopant-dependent interaction and render this new class of single-phased and dual-emissive QDs a promising future to be applied in white LED.
High-performance all-solution-processed quantum dot near-infrared-to-visible upconversion devices for harvesting photogenerated electrons

Nan Zhang,Haodong Tang,Kanming Shi,Weigao Wang,Weiqiao Deng,Bing Xu,Kai Wang,Xiao Wei Sun

DOI: https://doi.org/10.1063/1.5124735

IF: 4

2019-11-25

Applied Physics Letters

Abstract:All-solution-processed quantum dot (QD) upconversion devices were realized by constructing a colloidal PbS QD near-infrared (NIR ∼ 1 μm)-sensitive layer on the cathode side of a red CdSe quantum dot light-emitting diode (QLED). Different from conventional upconversion devices, we utilized the photogenerated electrons rather than the holes created in the NIR-sensitive layer to inject into the QLED for visible light emission. Consequently, we obtained high-performance devices with a maximum photon-to-photon conversion efficiency of 3.35% and a luminance on-off ratio of approximately 8 × 103. The results indicate that the device structure could be used to realize low-cost and portable high-performance QD-based upconversion devices via solution-processing.

physics, applied
Near-Infrared Lead Chalcogenide Quantum Dots: Synthesis and Applications in Light Emitting Diodes

Haochen Liu,Huaying Zhong,Fankai Zheng,Yue Xie,Depeng Li,Dan Wu,Ziming Zhou,Xiao Wei Sun,Kai Wang

DOI: https://doi.org/10.1088/1674-1056/ab50fa

2019-10-25

Abstract:This paper reviews recent progress in the synthesis of near-infrared (NIR) lead chalcogenide (PbX; PbX=PbS, PbSe, PbTe) quantum dots (QDs) and their applications in NIR QDs based light emitting diodes (NIR-QLEDs). It summarizes the strategies of how to synthesize high efficiency PbX QDs and how to realize high performance PbX based NIR-QLEDs.

Applied Physics,Mesoscale and Nanoscale Physics
PbSe Quantum Dots Sensitized High-Mobility Bi2O2Se Nanosheets for High-Performance and Broadband Photodetection Beyond 2 Micrometers.

Fakun Wang,T. Zhai,F. Zhuge,Kailang Liu,Jianbing Zhang,Peng Luo,Linyuan Lian

DOI: https://doi.org/10.1021/acsnano.9b03124

IF: 17.1

2019-08-13

ACS Nano

Abstract:As an emerging two-dimensional (2D) semiconductor, Bi2O2Se has recently attracted broad interests in optoelectronic devices for its superior mobility and ambient stability, whereas the diminished photoresponse near its inherent indirect bandgap (0.8 eV or λ = 1550 nm) severely restricted its application in the broad infrared spectra. Here, we report the Bi2O2Se nanosheets based hybrid photodetector for short wavelength infrared (SWIR) detection up to 2 µm via PbSe colloidal quantum dots (CQDs) sensitization. The type II interfacial band offset between PbSe and Bi2O2Se not only enhanced the device responsivity compared to bare Bi2O2Se but also sped up the response time to ~4 ms, which was ~300 times faster than PbSe CQDs. It was further demonstrated that the photocurrent in such 0D-2D hybrid photodetector could be efficiently tailored from photoconductive to photogate dominated response under external field effects, thereby rendering a sensitive infrared response >103 A/W at 2 µm. The excellent performance up to 2 µm highlight the potential of field effect modulated Bi2O2Se based hybrid photodetectors in pursuing highly sensitive and broadband photodetection.

Physics,Engineering,Medicine,Materials Science
Is CaMKII a link between inflammation and hypertrophy in heart?

Madhu V Singh,M. Anderson

DOI: https://doi.org/10.1007/s00109-011-0727-5

2011-01-29

Journal of Molecular Medicine

Abstract:
Non‐Toxic CuInS2/ZnS Colloidal Quantum Dot for Near‐Infrared Light‐Emitting Diodes

Li Jun Lim,Xiaofei Zhao,Zhi‐Kuang Tan

DOI: https://doi.org/10.1002/adma.202301887

IF: 29.4

2023-04-07

Advanced Materials

Abstract:Ternary CuInS2 quantum dots (QDs) with photoluminescence tunable from the visible to near‐infrared (NIR) region are promising light‐emitters for consumer electronics due to the absence of toxic elements such as Pb, Cd or As. Despite the compelling performance of visible emitting CuInS2 QDs, reports on NIR emission remain limited with modest efficiencies at wavelengths beyond 900 nm. In this work, we describe the facile synthesis of NIR emitting CuInS2/ZnS QDs through the use of a binary sulfur precursor, consisting of 1‐dodecanethiol (DDT) and hexamethyldisilathiane (HMDS). The reactive HMDS facilitated faster nucleation and led to a higher density of emissive Cu‐deficiency sites. The resulting QDs exhibit high photoluminescence quantum efficiency (PLQE) of 65% at a long emission wavelength of 920 nm. Using these QDs, we fabricated NIR light‐emitting diodes (LED) which attained an external quantum efficiency (EQE) of 8.2%. This efficiency is comparable to the best reported PbS and InAs QD LEDs, and its emission wavelength exceeds that of lead iodide perovskites. This work thus marks one of the first reports of efficient NIR LEDs based on environmentally‐benign CuInS2 QDs and may open up promising new applications in consumer electronic products. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Plasmon-Enhanced Surface-State Emission of CdSe Quantum Dots and Its Application to Microscale Luminescence Patterns

Lian Hu,Huizhen Wu,Chunfeng Cai,Tianning Xu,Bingpo Zhang,Shuqiang Jin,Zhengfen Wan,Xiaodong Wei

DOI: https://doi.org/10.1021/jp210269m

2012-01-01

The Journal of Physical Chemistry C

Abstract:In this paper, we report distinct enhancement of surface-state emissions (SSEs) of colloidal CdSe quantum dots (QDs) via coupling to localized plasmons (LPs) in Ag nanostructures. The roles of oleic acid (OA) ligand on QDs in the formation of Ag nanostructures and in the intense enhancement of SSEs of CdSe QDs are explored. We find that OA ligand on CdSe QDs plays a critical role in modifying the morphology of the contacted Ag, which consequently impacts the coupling of QD emitters with LPs in Ag. A systematic study of size effect of QDs on coupling of SSEs with LPs shows that as-deposited small Ag particles favorably enhance the SSEs of small-size CdSe QDs. The OA ligand on QDs yields better Ag crystallinity and clear corners during the annealing process; therefore, it promotes reshaping of small Ag particles into larger ones, favorable to enhance the SSEs of large-size CdSe QDs. The annealed QDs/Ag hybrid structures are more stable than the unannealed ones due to the loss of the OA ligand in the heating process. The selective coupling of QD emitters with LPs in Ag nanostructures allows feasible realization of microscale fluorescent color patterns. The approach of OA-assisted modification of plasmonic properties of Ag nanostructures provides a new route to synthesizing bright luminescence materials and devices that use colloidal QDs.
Ultrasmall near-infrared Ag2Se quantum dots with tunable fluorescence for in vivo imaging

Yi-Ping Gu,Ran Cui,Zhi-Ling Zhang,Zhi-Xiong Xie,Dai-Wen Pang

DOI: https://doi.org/10.1021/ja2089553

2012-01-11

Abstract:A strategy is presented that involes coupling Na(2)SeO(3) reduction with the binding of silver ions and alanine in a quasi-biosystem to obtain ultrasmall, near-infrared Ag(2)Se quantum dots (QDs) with tunable fluorescence at 90 °C in aqueous solution. This strategy avoids high temperatures, high pressures, and organic solvents so that water-dispersible sub-3 nm Ag(2)Se QDs can be directly obtained. The photoluminescence of the Ag(2)Se QDs was size-dependent over a wavelength range from 700 to 820 nm, corresponding to sizes from 1.5 ± 0.4 to 2.4 ± 0.5 nm, with good monodispersity. The Ag(2)Se QDs are less cytotoxic than other nanomaterials used for similar applications. Furthermore, the NIR fluorescence of the Ag(2)Se QDs could penetrate through the abdominal cavity of a living nude mouse and could be detected on its back side, demonstrating the potential applications of these less toxic NIR Ag(2)Se QDs in bioimaging.
Synthesis of Cu-doped InP nanocrystals (d-dots) with ZnSe diffusion barrier as efficient and color-tunable NIR emitters.

Renguo Xie,Xiaogang Peng

DOI: https://doi.org/10.1021/ja903558r

IF: 15

2009-01-01

Journal of the American Chemical Society

Abstract:Efficient Cu-doped InP quantum dots (Cu:InP d-dots) emitters were successfully synthesized by epitaxial growth of a ZnSe diffusion barrier for the dopants. The Cu dopant emission of the Cu:InP/ZnSe core/shell d-dots covered the important red and near-infrared (NIR) window for biomedical applicaitons, from 630 to 1100 nm, by varying the size of the InP host nanocrystals. These new d-dots emitters not only compensate for the emission wavelength of the existing noncadmium d-dots emitters, Cu- and Mn-doped ZnSe d-dots (450-610 nm), but also offer a complete series of efficient nanocrystal emitters based on InP nanocrystals. The one-pot synthetic scheme for the formation of Cu:InP/ZnSe core/shell cl-clots was successfully established by systematically studying the doping process, the dopant concentration-dependent photophysical properties, and the dopant diffusion during shell epitaxy, etc. Complete elimination of InP bandgap emission and efficient pure dopant emission (with photoluminescence quantum yield as high as between 35-40%) of the core/shell d-dots were achieved by optimizing the final doping level and the diffusion barrier thickness.
Dedoping of Intraband Silver Selenide Colloidal Quantum Dots through Strong Electronic Coupling at Organic/Inorganic Hybrid Interfaces

Håvard Mo Lnås,Shlok Joseph Paul,Michael R Scimeca,Navkawal Mattu,Jiaqi Zuo,Nitika Parashar,Letian Li,Elisa Riedo,Ayaskanta Sahu

DOI: https://doi.org/10.1021/acs.cgd.3c01474

2024-03-22

Abstract:Colloidal quantum dot (CQD) infrared (IR) photodetectors can be fabricated and operated with larger spectral tunability, fewer limitations in terms of cooling requirements and substrate lattice matching, and at a potentially lower cost than detectors based on traditional bulk materials. Silver selenide (Ag2Se) has emerged as a promising sustainable alternative to current state-of-the-art toxic semiconductors based on lead, cadmium, and mercury operating in the IR. However, an impeding gap in available absorption bandwidth for Ag2Se CQDs exists in the short-wave infrared (SWIR) region due to degenerate doping by the environment, switching the CQDs from intrinsic interband semiconductors in the near-infrared (NIR) to intraband absorbing CQDs in the mid-wave infrared (MWIR). Herein, we show that the small molecular p-type dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) can be used to extract electrons from the 1Se state of MWIR active Ag2Se CQDs to activate their intrinsic energy gap in the SWIR window. We demonstrate quenching of the MWIR Ag2Se absorbance peak, shifting of nitrile vibrational peaks characteristic of charge-neutral F4-TCNQ, as well as enhanced CQD absorption around ∼2500 nm after doping both in ambient and under air-free conditions. We elucidate the doping mechanism to be one that involves an integer charge transfer akin to doping in semiconducting polymers. These indications of charge transfer are promising milestones on the path to achieving sustainable SWIR Ag2Se CQD photodetectors.

The trouble with Billroth II is.

Near-infrared Absorption–emission Cross-Sections of PbSe Quantum Dots Doped in UV Gel

Pb‐Doped Ag 2 Se Quantum Dots with Enhanced Photoluminescence in the NIR‐II Window

Iodide capped PbS/CdS core-shell quantum dots for efficient long-wavelength near-infrared light-emitting diodes

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

Review Body's Report

White light-emitting quantum dot diodes and tuning of luminescence processes

Colloidal Alloyed Quantum Dots with Enhanced Photoluminescence Quantum Yield in the NIR-II Window

Visible and Near-Infrared, Multiparametric, Ultrasensitive Nanothermometer Based on Dual-Emission Colloidal Quantum Dots

Highly Monodisperse PbS Quantum Dots with Facet Engineering for High-Radiance Light-Emitting Diodes in the NIR-II Window

Near-infrared quantum dot light emitting diodes employing electron transport nanocrystals in a layered architecture

Enhanced Tunable Dual Emission of Cu:InP/ZnS Quantum Dots Enabled by Introducing Ag Ions

High-performance all-solution-processed quantum dot near-infrared-to-visible upconversion devices for harvesting photogenerated electrons

Near-Infrared Lead Chalcogenide Quantum Dots: Synthesis and Applications in Light Emitting Diodes

PbSe Quantum Dots Sensitized High-Mobility Bi2O2Se Nanosheets for High-Performance and Broadband Photodetection Beyond 2 Micrometers.

Is CaMKII a link between inflammation and hypertrophy in heart?

Non‐Toxic CuInS2/ZnS Colloidal Quantum Dot for Near‐Infrared Light‐Emitting Diodes

Plasmon-Enhanced Surface-State Emission of CdSe Quantum Dots and Its Application to Microscale Luminescence Patterns

Ultrasmall near-infrared Ag2Se quantum dots with tunable fluorescence for in vivo imaging

Synthesis of Cu-doped InP nanocrystals (d-dots) with ZnSe diffusion barrier as efficient and color-tunable NIR emitters.

Dedoping of Intraband Silver Selenide Colloidal Quantum Dots through Strong Electronic Coupling at Organic/Inorganic Hybrid Interfaces