Observations on the treatment of Dirofilaria immitis infection in dogs in Brisbane.

C. Carlisle

DOI: https://doi.org/10.1111/J.1751-0813.1970.TB01997.X

1970-05-01

Australian Veterinary Journal

Abstract:

What problem does this paper attempt to address?

Study of Surface Oxidation of PbTe Films

Jianxiao Si,Qinglei Wang,Haifei Wu,hanjie Zhang,Huizhen Wu,Tianning Xu,Minglong Xia

DOI: https://doi.org/10.13922/j.cnki.cjovst.2008.03.015

2008-01-01

Abstract:PbTe films were grown by molecular beam epitaxy (MBE) on BaF2(111) substrates. Surface microstructures and surface oxidation were characterized with high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), low energy electron spectroscopy (LEED) and X-ray photoelectron spectroscopy (XPS). Helical steps were clearly observed on the fairly smooth, compact PbTe surfaces. After exposure in air for three months, thin layers of PbO and TeO2 were found to exist on top of the films. We found that annealing at a temperature of 475°C in ultra high vacuum completely removes the oxidized layers from the PbTe film surfaces. Possible mechanisms were also tentatively discussed.
Ab Initiostudy of Multiferroicbifeo3(110) Surfaces

Takahiro Shimada,Kou Arisue,Jie Wang,Takayuki Kitamura

DOI: https://doi.org/10.1103/physrevb.89.245437

2014-01-01

Abstract:The nature of multiferroic surfaces, more specifically, the energetic, ferroelectric, and noncollinear magnetic properties of BiFeO3 (110) surfaces, is investigated using ab initio (first-principles) calculations based on the fully unconstrained spin-density functional theory. As in the case of other perovskite oxides, the O-terminated surface is found to be energetically favorable. The spontaneous polarization and magnetic moment at the surface rotate in different ways from their counterparts in the bulk, which leads to a unique magnetoelectric response at the surface. The detailed lattice-distortion-mode (symmetry) analysis reveals that the rotation of the ferroelectric polarization results from the additional symmetry breaking due to the surface termination, whereas the rotation of the magnetic moment is predominantly caused by the magnetocrystalline anisotropy. Furthermore, we investigate the effect of epitaxial strain and find that the strain responses of both the polarization and the magnetic moment are markedly enhanced at the surfaces.
In situ resonant photoemission and X-ray absorption study of the BiFeO3 thin film

Abduleziz Ablat,Mamatrishat Mamat,Yasin Ghupur,Rong Wu,Emin Muhemmed,Jiaou Wang,Haijie Qian,Rui Wu,Kurash Ibrahim

DOI: https://doi.org/10.48550/arXiv.1511.07747

2015-11-24

Abstract:Multiferroic bismuth ferrite (BiFeO3) thin films were prepared by pulsed laser deposition (PLD) technique. Electronic structures of the film have been studied by in situ photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). Both the Fe 2p PES and XAS spectra show that Fe ion is formally in +3 valence state. The Fe 2p and O K edge XAS spectra indicate that the oxygen octahedral crystal ligand field splits the unoccupied Fe 3d state to t2g and eg states. Valence band Fe 2p-3d resonant photoemission results indicate that hybridization between Fe 3d and O 2p plays important role in the multiferroic BiFeO3 thin films.

Materials Science
Oxidation and Oxygen Thermal Desorption Mechanism on Narrow-Gap Iv-Vi Semiconductor Pbte(111) Surface

Wu Hai-Fei,Wu Ke,Zhang Han-Jie,Liao Qing,He Pi-Mo

DOI: https://doi.org/10.3866/pku.whxb201202131

2012-01-01

Acta Physico-Chimica Sinica

Abstract:Oxidation and thermal desorption mechanism on the PbTe(111) surface were investigated using X-ray photoemission spectroscopy (XPS), scanning tunneling microscopy (STM), and low-energy-electron diffraction (LEED). The initial cleaning of the surface by 500 V Ai(+) sputtering followed by annealing at 250 degrees C yielded a perfect (1 x 1) PbTe(111) surface. XPS measurements showed that PbO2, PbO, and TeO2 were present at the PbTe(111) surface after air exposure for 2 days, and the intensity ratio of Te 3d(5/2) and Pb 4f(7/2) increased rapidly compared to that of the clean PbTe(111) surface, indicating Te depletion and Pb enrichment of the surface. XPS and STM measurements showed that the thickness of the oxide layer was more than 2 monolayers (MLs). During thermal treatment, the core levels of PbO2 and TeO2 disappeared and the intensity of the O 1s core level decreased, indicating surface decomposition of PbO2 and TeO2, and desorption of oxygen, whereas PbO was still present on the surface after annealing at up to 350 degrees C.
Polar Order Evolutions Near the Rhombohedral to Pseudocubic and Tetragonal to Pseudocubic Phase Boundaries of the Bifeo3-Batio3 System

Yongxing Wei,Changqing Jin,Yiming Zeng,Xiaotao Wang,Gang Xu,Xiaoli Wang

DOI: https://doi.org/10.3390/ma8125462

IF: 3.4

2015-01-01

Materials

Abstract:Solid solutions of (1-x)BiFeO3-xBaTiO3 (BF-BT, 0.05 ≤ x ≤ 0.98) were prepared and characterized. It was found that the dielectric constant εm, remnant polarization Pr and piezoelectric coefficient d33 reach their maximum values near the rhombohedral–pseudocubic phase boundary. In particular, the 0.7BF-0.3BT composition shows large polarization (Pr > 20 μC/cm2) and a temperature-stable piezoelectric property (d33 > 100 pC/N when the annealing temperature is lower than ~400 °C). Near the tetragonal–pseudocubic phase boundary, εm and Pr decrease, and the piezoelectric property vanishes when the BF content reaches 4 mol %.
AFM and Raman studies of topological insulator materials subject to argon plasma etching

Isaac Childres,Jifa Tian,Ireneusz Miotkowski,Yong Chen

DOI: https://doi.org/10.1080/14786435.2012.728009

2012-09-20

Abstract:Plasma etching is an important tool in nano-device fabrication. We report a study on argon plasma etching of topological insulator materials Bi2Se3, Bi2Te3, Sb2Te3 and Bi2Te2Se using exfoliated flakes (with starting thicknesses of ~100 nm) derived from bulk crystals. We present data mainly from atomic force microscopy (AFM) and Raman spectroscopy. Through AFM measurements, plasma exposure is observed to decrease the thickness of our samples and increase surface roughness (with height fluctuations reaching as large as ~20 nm). We extract an etching rate for each type of material. Plasma exposure also causes a widening (especially Eg2) of the characteristic Raman peaks, with no significant change in peak position. The overall Raman intensity is observed to initially increase, then decrease sharply after the samples are etched below ~20 nm in thickness. Our findings are valuable for understanding the effects of argon plasma etching on topological insulator materials.

Materials Science
Surface chemistry and porosity engineering through etching reveal ultrafast oxygen reduction kinetics below 400 °C in B-site exposed (La,Sr)(Co,Fe)O3 thin-films

Matias Acosta,Federico Baiutti,Xuejing Wang,Andrea Cavallaro,Ji Wu,Weiwei Li,Stephen C. Parker,Ainara Aguadero,Haiyan Wang,Albert Tarancón,Judith L. MacManus-Driscoll

DOI: https://doi.org/10.1016/j.jpowsour.2022.230983

IF: 9.2

2022-03-01

Journal of Power Sources

Abstract:Oxides are critical materials for energy devices like solid oxide cells, catalysts, and membranes. Their performance is often limited by their catalytic activity at reduced temperatures. In this work, a simple etching process with acetic acid at room temperature was used to investigate how oxygen exchange is influenced by surface chemistry and mesoporous structuring in single-crystalline epitaxial (La0.60Sr0.40)0.95(Co0.20Fe0.80)O3. Using low energy ion scattering and electrical measurements, it is shown that increasing the B-site transition metal cation surface exposure (most notably with Fe) leads to strongly reduced activation energy from E a ≈ 1 eV to Ea ≈ 0.4 eV for oxygen exchange and an order of magnitude increased oxygen exchange kinetics below 400 °C. Increasing the active area by ∼200% via mesoporous structuring leads to increased oxygen reduction rates by the same percentage. Density functional calculations indicate that a B-site exposed surface with high oxygen vacancy concentration can explain the experimental results. The work opens a pathway to tune surfaces and optimize oxygen exchange for energy devices.

energy & fuels,materials science, multidisciplinary,electrochemistry,chemistry, physical
Microstructural and Electrical Characteristics of Epitaxial Bifeo3 Thick Films Sputtered at Different Ar/O-2 Flow Ratios

Hanfei Zhu,Xin Sun,Limin Kang,Yunxiang Zhang,Zhenghai Yu,Jun Ouyang,Wei Pan

DOI: https://doi.org/10.1039/c6ce00781c

IF: 3.756

2016-01-01

CrystEngComm

Abstract:Epitaxial BiFeO3 films (similar to 0.5 mu m thick) were prepared on (100) LaAlO3 substrates using radio-frequency (RF) magnetron sputtering. A good heteroepitaxial growth of BiFeO3 films was confirmed by XRD and TEM analyses. While co-existing rhombohedral and tetragonal-like phases were revealed near the bottom interface of the films in the form of elastic domains to relax the initial misfit stresses, the bulk of the films consists of only the rhombohedral phase. The sputtering atmosphere, i.e. the flow ratio of Ar/O-2 at a fixed sputtering pressure, did not affect the epitaxial growth and phase structure of the BiFeO3 films. Instead, it showed significant influences on the electrical properties, i.e. dielectric behavior, as well as the ferroelectric and leakage current characteristics. It was shown that, among the four films deposited at different Ar/O-2 flow ratios (2 : 1, 3 : 1, 4 : 1 and 6 : 1), the film with a 4 : 1 flow ratio has the best overall electrical properties, which can be attributed to its stoichiometric physical vapor growth at a balanced Ar/O-2 flow ratio. It showed a remnant polarization (2P(r)) of 150 mu C cm(-2) and a low leakage current density of about 3.6 x 10(-4) A cm(-2) at 200 kV cm(-1).
Surface and bulk ferroelectric phase transition in super-tetragonal BiFeO 3 thin films

Myriam Lachheb,Qiuxiang Zhu,Stéphane Fusil,Qiang Wu,Cécile Carrétéro,Aymeric Vecchiola,Manuel Bibes,Dominique Martinotti,Claire Mathieu,Christophe Lubin,Alexandre Pancotti,Xiaoyan Li-Bourrelier,Alexandre Gloter,Brahim Dkhil,Vincent Garcia,Nick Barrett

DOI: https://doi.org/10.1103/physrevmaterials.5.024410

IF: 3.98

2021-02-23

Physical Review Materials

Abstract:The temperature-dependent ferroelectric properties of super-tetragonal BiFeO3 are investigated using surface-sensitive low-energy electron microscopy (LEEM). We use epitaxial oxide BiFeO3/Ca0.96Ce0.04MnO3 bilayers grown by pulsed laser deposition on YAlO3 substrates. Ferroelectric, micrometer-scale domains are written by piezoresponse force microscopy and subsequently observed by LEEM from room temperature up to about 950 K. Kelvin probe force microscopy and LEEM spectroscopy reveal that the surface potential is efficiently (>50%) screened by adsorbates that are only released after annealing above 873 ± 50 K in ultrahigh vacuum. The surface structure and chemistry of the ferroelectric thin films are analyzed using scanning transmission electron microscopy, electron energy loss spectroscopy, and x-ray photoelectron spectroscopy, discarding the occurrence of a putative “skin layer” effect. While its magnetic and structural transitions were reported in the literature, the true, ferroelectric Curie temperature of super-tetragonal BiFeO3 has not been determined so far. Here, we measure a Curie temperature of 930 ± 30 K for the super-tetragonal BiFeO3 surface and corroborate it with volume-sensitive, temperature-dependent x-ray diffraction measurements. These results suggest that LEEM can be used as a powerful tool to probe surface charge and ferroelectric transitions in ultrathin films.

materials science, multidisciplinary
Understanding the impact of Bi stoichiometry towards optimised BiFeO3 photocathodes: structure, morphology, defects and ferroelectricity

Haozhen Yuan,Subhajit Pal,Chloe Forrester,Qinrong He,Joe Briscoe

DOI: https://doi.org/10.1039/d3ta05617a

IF: 11.9

2024-06-07

Journal of Materials Chemistry A

Abstract:BiFeO 3 thin films have been widely studied for photoelectrochemical water splitting applications because of its narrow bandgap and good ferroelectricity which can promote the separation of photo-generated charges. Bismuth is well known as a volatile element and excess bismuth is usually added into the precursor to compensate the loss of bismuth during heat treatment. But the amount of excess bismuth required and how excess bismuth affects PEC performance have not been clearly studied. Herein, self-doped Bi 1+x FeO 3 thin films are prepared via simple chemical solution deposition method with excess bismuth from 0 – 30% in the precursor. The loss of bismuth after annealing is confirmed by EDX and XPS. Multiple factors were investigated and it was found that altering the Bi stoichiometry resulted in changes of structure, morphology, defects, electronic properties and PEC performance. An enhanced photocurrent is observed in bismuth-rich BiFeO 3 films, which can be ascribed to the larger grain size, decreased oxygen vacancies, lattice distortion and supported charge separation. Moreover, the photocathodic performance can be further enhance by ferroelectric poling. Our work indicates that deficient bismuth should be carefully avoided during heat treatment and moreover, a slight excess of Bi is beneficial for PEC performance. Therefore, we offer a simple way to enhance PEC performance of BiFeO 3 -based ferroelectric materials through careful control of their stoichiometry.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Etching and Compositional Ratio Effect on the Surface Properties of Bismuth Telluride Thin Films

Jeongho Mun,Sangmin Han,Hee-Seung Yoon,Jisoo Kang,Oliver Jonas,Juyun Park,Yong-Cheol Kang

DOI: https://doi.org/10.3390/surfaces7010012

2024-03-15

Surfaces

Abstract:Bismuth telluride has garnered considerable attention owing to its versatile properties applicable in thermoelectric and antibacterial domains, as well as its intriguing topological insulating properties. In this work, our group fabricated bismuth telluride thin films with various ratios using radio frequency magnetron sputtering. The surface properties of these thin films were thoroughly analyzed by employing a diverse array of analytical techniques, including X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), four-point probe and contact angle (CA) measurements. Specifically, our XPS findings indicated that Bi is more susceptible to oxidation than Te following Ar+-ion etching. Pure Te thin films exhibited the highest Rq value of 31.2 nm based on AFM and SEM results due to their larger grain sizes. The XRD patterns revealed a peak at 27.75° for thin films with 20% Te, attributed to its rhombohedral structure. Moreover, thin films with 30% Te yielded the highest weighted average work function with a value of 4.95 eV after etching. Additionally, pristine Bi and Te thin films demonstrated the most robust hydrophobic properties compared to intermediate-composition thin films, as determined by CA measurements.
Growth and Physical Properties of BiFeO3 Thin Films Directly on Si Substrate

Xiaokang Yao,Can Wang,Shilu Tian,Yong Zhou,Xiaomei Li,Chen Ge,Er-jia Guo,Meng He,Xuedong Bai,Peng Gao,Guozhen Yang,Kuijuan Jin

DOI: https://doi.org/10.1016/j.jcrysgro.2019.06.017

IF: 1.8

2019-01-01

Journal of Crystal Growth

Abstract:Multiferroic BiFeO3 thin films have been widely studied for their intriguing fundamental physics and exotic functional properties. Integration of the BiFeO3 thin films with semiconductor Si is crucial for the practical development of novel electronic and photosensitive devices. Here, we report the fabrication and physical properties of BiFeO3 thin films grown directly on bare Si substrate by laser-molecular beam epitaxy. It was found that a predeposition process performed at room temperature and high vacuum conditions is effective and necessary for obtaining the pure-phase BiFeO3 thin films. X-ray diffraction measurements indicate that the obtained BiFeO3 thin films are in a single-phase polycrystalline state and show improved crystallinity with increasing thickness, and a transmission electronic microscopy image illustrates an interface layer around 3 nm in thickness existing between the BiFeO3 thin films and Si substrate. Electrical measurements show that the BiFeO3 thin films have good ferroelectricity and low leakage current. Moreover, optical properties investigated by spectroscopic ellipsometry demonstrate that the direct band gap of the thin films increases with decreasing thickness.
Diathermy versus cryothermy: a comparative study in the treatment of retinal detachments.

R. S. Hamilton,R. E. Hall,P. F. Stein

Abstract:
Pure phase BiFeO$_3$ thin films sputtered over Si: A new route towards high magnetization

G. A. Gomez-Iriarte,C. Labre,L. A. S. de Oliveira,J. P. Sinnecker

DOI: https://doi.org/10.1016/j.jmmm.2018.03.056

2018-04-01

Abstract:We have investigated the structural and magnetic properties of BiFeO$_3$ (BFO) thin films grown over (100)-oriented Si substrates by rf magnetron sputtering in a new route under O$_2$ free low pressure Ar atmosphere. Single-phase BFO films were deposited in a heated substrate and post-annealed in situ. The new routed allows high deposition rate and produce polycrystalline BFO pure phase, confirmed by high resolution X-ray diffraction. Scanning electron and atomic force microscopy reveal very low surface roughness and mean particle size of 33 nm. The BFO phase and composition were confirmed by transmission electron microscopy and line scanning energy-dispersive X-ray spectroscopy in transmission electron microscopy mode. The surface chemistry of the thin film, analyzed by X-ray photoelectron spectroscopy, reveals the presence of Fe$^{3+}$ and Fe$^{2+}$ in a 2:1 ratio, a strong indication that the film contains oxygen vacancies. An hysteretic ferromagnetic behavior with room temperature high saturation magnetization $\sim 165 \times 10^3$ A/m was measured along the film perpendicular and parallel directions. Such high magnetization, deriving from this new route, is explained in the scope of oxygen vacancies, the break of the antiferromagnetic cycloidal order and the increase of spin canting by change in the surface/volume ratio. Understanding the magnetic behavior of a multiferroic thin films is a key for the development of heterogeneous layered structures and multilayered devices and the production of multiferroic materials over Si substrates opens new possibilities in the development of materials that can be directly integrated into the existent semiconductor and spintronic technologies.

Materials Science
Surface structure and quenching effects in BiFeO 3 ‐BaTiO 3 ceramics

Bing Wang,Yizhe Li,David A. Hall

DOI: https://doi.org/10.1111/jace.18188

IF: 4.186

2021-10-30

Journal of the American Ceramic Society

Abstract:The structure and properties of Mn-doped 0.67BiFeO3-0.33BaTiO3 ceramics are systematically investigated with respect to the effects of annealing prior to rapid cooling by quenching in air. Air-quenching induces a change in crystal structure from pseudo-cubic to rhombohedral, with higher quenching temperatures leading to an increased rhombohedral distortion. These structural changes are correlated with the appearance of more well-defined ferroelectric domain configurations. It is shown that the surface preparation procedures for XRD measurements can induce significant changes in the peak profiles, indicating differences in crystal structure between the surface and bulk regions. Frequency dispersion in the temperature-dependent relative permittivity for the as-sintered sample is significantly reduced after quenching, accompanied by enhancement of the Curie point and improved temperature-stability of piezoelectric properties. It is proposed that the formation of defect clusters by A-site cation diffusion during cooling is circumvented by quenching, leading to the observed modification of structural distortion and ferroelectric properties.This article is protected by copyright. All rights reserved

materials science, ceramics
Fabrication and photocatalysis of BiFeO3 with inverse opal structure

Tianya Tan,Wang Xie,Guangju Zhu,Jing Shan,Panfeng Xu,Lina Li,Jiwei Wang

DOI: https://doi.org/10.1007/s10934-015-9938-4

2015-03-18

Journal of Porous Materials

Abstract:The bismuth ferrite (BiFeO3, BFO)with a face-centered cubic inverse opal structure was prepared by the sol–gel method, involving the infiltration of liquid precursors into polystyrene (PS) colloidal crystals and the post-annealing for the remove of PS and the crystallization of BFO. This inverse opals exhibit a continuous 3D photonic crystal structure consisting of single phase BFO. The photocatalytic investigation reveals that the degradation rate of Rhodamine B under UV–vis light irradiation is 1.4 times that of the conventional BFO film without the high periodic porous structure. The high surface area, slow photon and light scattering effects due to the photonic crystal structure are responsible for the enhanced photocatalysis of BFO inverse opal. This work is expected to improve the comprehensive performance of BFO by integrating the photonic effect together with its ferromagnetic and visible-light-driving catalysis properties.

materials science, multidisciplinary,chemistry, physical, applied
Modification in Surface Properties of Bismuth after Thermal Plasma Treatment

Muhammad Arif Mehmood,Shazia Bashir,Asma Hayat,Muhammad Shahid Rafique,Muhammad Hamza,Sajid Ali,Syed Muhammad Kamran Shabbir,Ammar Afzal

DOI: https://doi.org/10.1007/s11665-024-09214-y

IF: 2.3

2024-02-13

Journal of Materials Engineering and Performance

Abstract:The present study deals with the designing and fabrication of an experimental setup for argon (Ar) thermal plasma generation and its implementation for surface structuring along with modifications in morphological, compositional, electrical, contact angle and mechanical properties of Bismuth (Bi). Ar plasma parameters have been investigated by using a solid state nuclear track detector (SSNTD). In the present work, polycrystalline Bi has been treated at various Ar gas flow rates ranging from 10 to 25 L/min for a fixed time interval of 10 minutes. Bi targets were also treated at different treatment times ranging from 10 to 25 minutes at constant gas flow rate of 15 L/min. Optical microscopy and scanning electron microscope (SEM) analyses reveal the melting, evaporation, splashing, collisional sputtering, coalescence fusion and ejection of materials at different gas flow rates which are responsible for the formation of protrusions, cavities, cones, particulates, melt pools and agglomerates. At different treatment timings, ejection of materials, thermal desorption, reattachments, re-solidification and recrystallization are responsible for particulates, cavities and conical spike formation. XRD patterns reveal the slightly higher angular peak shifting and intensity enhancement at the lowest gas flow rate and treatment time. At the highest flow rate and treatment time, some new phases of Bi 2 O 3 are identified. However, an increasing trend in peak intensity, crystallite size, induced stresses and the decreasing trend in dislocation line density is observed with increasing the thermal plasma treatment time and flow rate which are attributed to improved crystalline nature. FTIR analysis shows a considerable increase in existing peak intensities of BiO without the identification of a new band in plasma-treated Bi. After thermal plasma treatment, the decreasing trends in electrical conductivity along with contact angle and increasing trends in hardness are attributed to enhancements in defect generation and surface roughness.

materials science, multidisciplinary
Surface and Interface of Er2O3 Films Epitaxially Grown on Si Substrate:An X-Ray Photoelectron Spectroscopy Study

Yanyan Zhu,Zebo Fang

DOI: https://doi.org/10.13922/j.cnki.cjovst.2008.06.007

2008-01-01

Abstract:The Er2O3 films were grown by molecular beam expitaxy(MBE) on p-type Si(001) and Si(111) substrates.The microstructures and stoichiometries of the films,before and after cleaning with argon ion sputtering,were characterized with x-ray photoelectron spectroscopy(XPS).No chemical reaction induced by X-ray irradiation or by Ar ion sputtering was observed.The preliminary results show that the silicon oxide coverage on Si substrates strongly affects the stoichiometries of the Er2O3 films.For instance,a SiOx layer was found to be on top of the Er2O3 films grown on oxidized Si(001) substrate;in contrast,no such SiOx layer exists on Er2O3 films grown on clean Si substrates.Possible mechanisms were also tentatively discussed.
Effects of Chemical Fluctuations on Microstructures and Properties of Multiferroic Bifeo3 Thin Films

W. B. Luo,J. Zhu,Y. R. Li,X. P. Wang,D. Zhao,J. Xiong,Y. Zhang

DOI: https://doi.org/10.1063/1.2771089

IF: 4

2007-01-01

Applied Physics Letters

Abstract:Bi Fe O 3 films have been grown on SrTiO3 (001) substrates by pulsed laser deposition. It was found that oxygen partial pressure is crucial to phase purity, surface morphology, and surface chemistry. Single-phase BFO films were obtained at 1Pa O2, while Bi2O3 appeared in the films deposited at 0.01Pa as confirmed by x-ray diffractions. It was revealed that Fe2+ and metallic Bi exist in the films fabricated at 0.01Pa by x-ray photoelectron spectroscopy investigation. Owing to Fe2+ in the samples deposited at 0.01Pa, the saturation magnetization is much larger than the ones fabricated at 1Pa. A well-saturated ferroelectric hysteresis loop with a polarization of 23.6μC∕cm2 was observed in the single-phase samples. In contrast, the films deposited at 0.01Pa exhibited poor ferroelectric properties.
Potentiodynamic Polarization Studies and Surface Chemical Composition of Bismuth Titanate (Bi x Ti y O z) Films Produced through Radiofrequency Magnetron Sputtering

José E Alfonso,Jhon J Olaya,Manuel J Pinzón,José F Marco

DOI: https://doi.org/10.3390/ma6104441

2013-10-08

Abstract:The applications of Bismuth Titanate (BixTiyOz) materials have been focused on their electronic and optical properties, but with respect to the use of these compounds in applications like corrosion resistance, have been very few or nonexistent. For this reason, in the present investigation BixTiyOz thin films were deposited using RF magnetron sputtering onto silicon wafers, stainless steel 316L, and titanium alloy (Ti₆Al₄V) substrates, in order to carry out a study of the corrosion behavior of this compound. The structural properties of the coatings were studied through X-ray diffraction (XRD), the morphology was determined using Scanning Electron Microscopy (SEM), the corrosion resistance behavior of the coated and uncoated substrates was evaluated via the Potentiodynamic Polarization technique, and surface chemical composition was evaluated through X-ray photoelectron spectroscopy (XPS). The XRD results indicated that the films were amorphous. The SEM micrographs showed that the deposited films were homogeneous, but in some cases there were cracks. The potentiodynamic polarization technique showed that the corrosion current in the coated substrates decreased by an order of two magnitudes with respect to the uncoated substrates, but in both cases the corrosion mechanism was pitting due to the pores in the film. The XPS analysis shows that the deposited films contain both Bi3+ and Ti4+.

Observations on the treatment of Dirofilaria immitis infection in dogs in Brisbane.

Study of Surface Oxidation of PbTe Films

Ab Initiostudy of Multiferroicbifeo3(110) Surfaces

In situ resonant photoemission and X-ray absorption study of the BiFeO3 thin film

Oxidation and Oxygen Thermal Desorption Mechanism on Narrow-Gap Iv-Vi Semiconductor Pbte(111) Surface

Polar Order Evolutions Near the Rhombohedral to Pseudocubic and Tetragonal to Pseudocubic Phase Boundaries of the Bifeo3-Batio3 System

AFM and Raman studies of topological insulator materials subject to argon plasma etching

Surface chemistry and porosity engineering through etching reveal ultrafast oxygen reduction kinetics below 400 °C in B-site exposed (La,Sr)(Co,Fe)O3 thin-films

Microstructural and Electrical Characteristics of Epitaxial Bifeo3 Thick Films Sputtered at Different Ar/O-2 Flow Ratios

Surface and bulk ferroelectric phase transition in super-tetragonal BiFeO 3 thin films

Understanding the impact of Bi stoichiometry towards optimised BiFeO3 photocathodes: structure, morphology, defects and ferroelectricity

Etching and Compositional Ratio Effect on the Surface Properties of Bismuth Telluride Thin Films

Growth and Physical Properties of BiFeO3 Thin Films Directly on Si Substrate

Diathermy versus cryothermy: a comparative study in the treatment of retinal detachments.

Pure phase BiFeO$_3$ thin films sputtered over Si: A new route towards high magnetization

Surface structure and quenching effects in BiFeO 3 ‐BaTiO 3 ceramics

Fabrication and photocatalysis of BiFeO3 with inverse opal structure

Modification in Surface Properties of Bismuth after Thermal Plasma Treatment

Surface and Interface of Er2O3 Films Epitaxially Grown on Si Substrate:An X-Ray Photoelectron Spectroscopy Study

Effects of Chemical Fluctuations on Microstructures and Properties of Multiferroic Bifeo3 Thin Films

Potentiodynamic Polarization Studies and Surface Chemical Composition of Bismuth Titanate (Bi x Ti y O z) Films Produced through Radiofrequency Magnetron Sputtering