Abstract:Artificial intelligence has become indispensable in modern life, but its energy consumption has become a significant concern due to its huge storage and computational demands. Artificial intelligence algorithms are mainly based on deep learning algorithms, relying on the backpropagation of convolutional neural networks or binary neural networks. While these algorithms aim to simulate the learning process of the human brain, their low bio-fidelity and the separation of storage and computing units lead to significant energy consumption. The human brain is a remarkable computing machine with extraordinary capabilities for recognizing and processing complex information while consuming very low power. Tunneling magnetoresistance (TMR)-based devices, namely magnetic tunnel junctions (MTJs), have great advantages in simulating the behavior of biological synapses and neurons. This is not only because MTJs can simulate biological behavior such as Spike-Timing Dependent Plasticity(STDP) and Leaky Integrate-Fire(LIF), but also because MTJs have intrinsic stochastic and oscillatory properties. These characteristics improve MTJs' bio-fidelity and reduce their power consumption. MTJs also possess advantages such as ultrafast dynamics and non-volatile properties, making them widely utilized in the field of neuromorphic computing in recent years. We conducted a comprehensive review of the development history and underlying principles of TMR, including a detailed introduction to the material and magnetic properties of MTJs and their temperature dependence. We also explored various writing methods of MTJs and their potential applications. Furthermore, we provided a thorough analysis of the characteristics and potential applications of different types of MTJs for neuromorphic computing. TMR-based devices have demonstrated promising potential for broad application in neuromorphic computing, particularly in the development of spiking neural networks. Their ability to perform on-chip learning with ultra-low power consumption makes them an exciting prospect for future advances in the era of the Internet of Things.

Multi-state MRAM cells for hardware neuromorphic computing

A Brain-Inspired In-Memory Computing System for Neuronal Communication Via Memristive Circuits.

Multistate Compound Magnetic Tunnel Junction Synapses for Digital Recognition

Multi-bit MRAM storage cells utilizing serially connected perpendicular magnetic tunnel junctions

Neuromorphic Hebbian learning with magnetic tunnel junction synapses

A novel compound synapse using probabilistic spin-orbit-torque switching for MTJ based deep neural networks

A design of magnetic tunnel junctions for the deployment of neuromorphic hardware for edge computing

Fully Hardware Memristive Neuromorphic Computing Enabled by the Integration of Trainable Dendritic Neurons and High‐Density RRAM Chip

Memristive brain-like computing

Multilayer ferromagnetic spintronic devices for neuromorphic computing applications

Commodity Bit-Cell Sponsored MRAM Interaction Design for Binary Neural Network

Multitasking Memristor for High Performance and Ultralow Power Artificial Synaptic Device Application

Flexible 3D Memristor Array for Binary Storage and Multi‐states Neuromorphic Computing Applications

Experimental demonstration of magnetic tunnel junction-based computational random-access memory

Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays

Experimental Demonstration of Neuromorphic Network with STT MTJ Synapses

In-MRAM Computing Based on Complementary-Sensing Time-Based Readout Circuit Using Hybrid VGSOT-MTJ/GAA-CNTFET

Stochastic Spintronic Device Based Synapses and Spiking Neurons for Neuromorphic Computation

Reconfigurable Multilevel Storage and Neuromorphic Computing Based on Multilayer Phase-Change Memory

A Dual Magnetic Tunnel Junction‐Based Neuromorphic Device

Tunneling Magnetoresistance Materials and Devices for Neuromorphic Computing