Abstract:During the fabrication of an indium-gallium-zinc oxide (IGZO) thin film transistor (TFT), the thermal process was used to reduce the resistivity of IGZO. The annealing temperature was found to have great influence on the transistor characteristics. At an optimized heat-treatment temperature, the depletion-mode IGZO TFT was fabricated with steeper subthreshold slope, higher filed-effect mobility and acceptable turn-on voltage. And the relatively conductive IGZO could directly replace the indium tin oxide as the transparent electrode of the organic light-emitting diode (OLED), reducing the mask count of the backplane for the active-matrix OLED display. INTRODUCTION Thin film transistor (TFT) based on metal oxide (MO), especially, indium-gallium-zinc oxide (IGZO), is considered as a good candidate to fabricate large area backplane for active-matrix organic light-emitting diode (AMOLED) display, due to its high mobility, good uniformity and low off-state current [1]. Our previous study [2] suggested that the resistivity (ρ) of IGZO highly depended on the heat-treatment conditions, such as annealing ambience, temperature, duration and gas permeability of IGZO cover, while the thermal process was often inevitable during the fabrication of IGZO TFT. With the active layer of IGZO covered with the gas-permeable silicon oxide (SiOx), the TFT was subjected to a serious anneals in an oxygen-deficient nitrogen (N2) ambience. With the increasing temperature, although the mobility was enhanced, the turn-on voltage (Von) became more and more negative. At an optimized temperature, the depletion-mode (DM) IGZO TFT with steeper subthreshold slope, higher filed-effect mobility and acceptable turn-on voltage was fabricated. Furthermore, such annealing-induced conductive IGZO source/drain regions can be directly used to replace the indium tin oxide (ITO) as the transparent electrode of OLED, reducing the mask count of AMOLED backplane. Annealing-Induced DM IGZO TFT Shown in Figure 1 is the evolution of the schematic cross-section of an IGZO TFT. A gate dielectric of 100 nm silicon oxide (SiOx) was first thermally grown on an n+ silicon substrate, which served as the gate electrode. 10 or 20 nm IGZO film was then room-temperature sputtered using a target of In2O3:Ga2O3:ZnO = 1:1:1 mol% in an atmosphere of 10% oxygen (O2) and 90% argon (Ar). After the patterning of the active-island using the hydrofluoric acid, a passivation layer of 300 nm SiOx was deposited at 300 oC in a plasma-enhanced chemical vapor deposition (PECVD) reactor. The tetraethylorthosilicate (TEOS) and O2 were used as the source gases. The contact holes were then opened and the resulting structure was subjected to a series of anneals, as shown in Figure 1a. Finally, 300 nm aluminum (Al) was deposited and patterned into electrodes (Fig. 1b). These TFTs were measured using an Agilent 4156C semiconductor parameter analyzer. n+ Si 100nm SiOx 300nm SiOx

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Hydrogen-Doping-Enabled Boosting of the Carrier Mobility and Stability in Amorphous IGZTO Transistors

Rapid Thermal Annealing under O2 Ambient to Recover the Deterioration by Gamma-Ray Irradiation in a-IGZO TFTs

Thin Film Transistor Using Amorphous InGaZnO Films as Both Channel and Source/Drain Electrodes

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Dual Role of AgNO 3 as an Oxidizer and Chloride Remover toward Enhanced Combustion Synthesis of Low-Voltage and Low-Temperature Amorphous Rare Metal-Free Oxide Thin-Film Transistors