Highly Transparent and Conductive Ga-doped InWO Multi-component Electrodes for Perovskite Photovoltaics

Dong-Hyeok Choi,Hae-Jun Seok,Su-Kyung Kim,Han-Ki Kim
DOI: https://doi.org/10.1016/j.jallcom.2024.175018
IF: 6.2
2024-06-04
Journal of Alloys and Compounds
Abstract:Wide-bandgap Ga-doped InWO (GIWO) transparent conductive electrodes (TCE) were fabricated by co-sputtering IWO and Ga 2 O 3 , followed by rapid thermal annealing (RTA), with the effects of the Ga dopant content on the electrical, optical, structural, and morphological properties of the GIWO multi-component electrodes investigated to optimize the GIWO electrode. According to the figure of merit (FOM), the GIWO film with a Ga content of 2.1 at.% exhibited a low sheet resistance of 9.9 Ohm/square and high transmittance of 91.71% at a wavelength of 550 nm. The presence of a high Lewis acid strength (LAS) dopant of Ga (1.16) and W (3.15) led to an increase in the carrier mobility of GIWO and transmittance in the near infrared wavelength region. In addition, the strongly preferred (222) and (400) orientations of the GIWO grains increase the carrier mobility and improve the surface morphology of the GIWO electrodes. The successful operation and superior performance of the planar p-i-n structured perovskite solar cells (PSC) fabricated on GIWO electrodes indicate the feasibility of GIWO as a substitute for conventional Sn-doped In 2 O 3 electrodes. The highest-performing PSC with GIWO electrodes exhibited reliable hysteresis with an efficiency difference of less than 1% depending on the scan direction under standard AM1.5 G conditions.
materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
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