Abstract:SnO2 has the advantages of excellent photostability and can be prepared at low-temperature below 200 degrees C.It is regarded as one of the excellent materials for the electron transport layer, and widely used in efficient andstable planar heterojunction perovskite solar cells. In this work, the low-cost, dense and uniform SnO2 electrontransport layer is prepared by spin coating at low temperature (150 degrees C) for perovskite solar cells with astructure of FTO/SnO2/CH3NH3PbI3 (MAPbI3)/Spiro-OMeTAD/Au. The crystallization and photoelectricproperties of SnO2 electron transport layers prepared at different concentrations (2.5%-10%) at 150 degrees C, and theinfluences of SnO2 electron transport layers on the formation of perovskite films and the performances ofperovskite solar cells are discussed. By analyzing the scanning electron microscope (SEM), ultraviolet-visiblelight absorption spectrum (UV-Vis) and transmission spectrum of the SnO2 film, it is found that the coverageand light transmittance of the substrate and band gap of the SnO2 film increase as the SnO2 content increases,while the absorbance decreases. By analyzing the SEM, UV-Vis, X-ray diffraction (XRD) and steady-statephotoluminescence spectrum (PL) analysis of the SnO2/MAPbI3 thin film, it is found that the MAPbI3deposited on the SnO2 layer with a concentration of 7.5% is uniform and pinhole-free, has the largest particlesize and the best crystallinity, as well as more effective charge extraction capability and transport capability.By analyzing the electrochemical impedance (EIS) and external quantum efficiency (EQE) of the device, theSnO2 electron transport layer with a concentration of 7.5% has better interface contact and lower interfaceresistance, which is beneficial to reducing the recombination of carriers and improving the photoelectricconversion capability, The perovskite solar cells based on SnO2 layer prepared with a concentration of 7.5%reaches a photoelectric conversion efficiency of 15.82% (Voc = 1.06 V, Jsc = 21.62 mA/cm2, FF = 69.40%), Afterstoring for 600 h in ambient air ((25 +/- 5) degrees C, RH>70%) without encapsulation, its efficiency remains 92% of theinitial efficiency. At the same time, we prepare flexible devices on flexible substrates (TIO/PEN) by using SnO2precursor with a concentration of 7.5%, which exhibits good photovoltaic performance and achieves aphotoelectric conversion efficiency of 13.12%, and storage time for 84 d in ambient air ((30 +/- 5) degrees C, RH>70%)without encapsulation, its efficiency remains 48% of the initial efficiency. The PCE retains 78% of the initialefficiency after 1000 bending cycles with a bending radius of 3 mm. The study of optimizing the concentrationof SnO2 has laid a foundation for improving the performance of flexible perovskite solar cells.

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