Linear and Nonlinear Two-Terminal Spin-Valve Effect from Chirality-Induced Spin Selectivity
Tianhan Liu,Xiaolei Wang,Hailong Wang,Gang Shi,Fan Gao,Honglei Feng,Haoyun Deng,Longqian Hu,Eric Lochner,Pedro Schlottmann,Stephan von Molnár,Yongqing Li,Jianhua Zhao,Peng Xiong,Stephan von Molnár
DOI: https://doi.org/10.1021/acsnano.0c07438
IF: 17.1
2020-11-02
ACS Nano
Abstract:Various mechanisms of electrical generation of spin polarization in <i>nonmagnetic</i> materials have been a subject of broad interest for their underlying physics and device potential in spintronics. One such scheme is chirality-induced spin selectivity (CISS), with which structural chirality leads to different electric conductivities for electrons of opposite spins. The resulting effect of spin filtering has been reported for a number of chiral molecules assembled on different surfaces. However, the microscopic origin and transport mechanisms remain controversial. In particular, the fundamental Onsager relation was argued to preclude linear-response detection of CISS by a ferromagnet. Here, we report definitive observation of CISS-induced magnetoconductance in vertical heterojunctions of (Ga,Mn)As/AHPA-L molecules/Au, directly verifying spin filtering by the AHPA-L molecules <i>via</i> spin detection by the (Ga,Mn)As. The pronounced and robust magnetoconductance signals resulting from the use of a magnetic semiconductor enable a rigorous examination of its bias dependence, which shows both linear- and nonlinear-response components. The definitive identification of the linear-response CISS-induced two-terminal spin-valve effect places an important constraint for a viable theory of CISS and its device manifestations. The results present a promising route to spin injection and detection in semiconductors without using any magnetic material.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c07438?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c07438</a>.Figures of thin film characterizations, molecular junctions' robustness, bias dependences, linear fitting and error analysis of the bias current dependences, sample 1 junction A MR, noise levels, and calculations for molecular coverage estimations; Schottky barrier width; theoretical model deviations of <i>G</i><sub><i>J</i></sub> and Δ<i>G</i><sub><i>J</i></sub>; explanation to rule out contribution from anomalous Hall effect in (Ga,Mn)As (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c07438/suppl_file/nn0c07438_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology