Abstract:Chirality-induced spin selectivity (CISS) generates giant spin polarization in transport through chiral molecules, paving the way for novel spintronic devices and enantiomer separation. Unlike conventional transport, CISS magnetoresistance (MR) violates Onsager's reciprocal relation, exhibiting significant resistance changes when reversing electrode magnetization at zero bias. However, its underlying mechanism remains unresolved. In this work, we propose that CISS MR originates from charge trapping that modifies the electron tunneling barrier and circumvents Onsager's relation, distinct from previous spin polarization-based models. Charge trapping is governed by the non-Hermitian skin effect, where dissipation leads to exponential wavefunction localization at the ferromagnet-chiral molecule interface. Reversing magnetization or chirality alters the localization direction, changing the occupation of impurity/defect states in the molecule (i.e., charge trapping) -- a phenomenon we term magnetochiral charge pumping. Our theory explains why CISS MR can far exceed the ferromagnet spin polarization and why chiral molecules violate the reciprocal relation but chiral metals do not. Furthermore, it predicts exotic phenomena beyond the conventional CISS framework, including asymmetric MR induced by magnetic fields alone (without ferromagnetic electrodes), as confirmed by recent experiments. This work offers a deeper understanding of CISS and opens avenues for controlling electrostatic interactions in chemical and biological systems through the magnetochiral charge pumping.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is about the physical mechanism behind the magnetoresistance (MR) phenomenon of chiral - induced spin selectivity (CISS). Specifically, CISS magnetoresistance violates Onsager's reciprocity relation and shows significant resistance changes in experiments. This change exists even at zero bias when the magnetization direction of the electrode is reversed. Traditional spin - polarization - based models cannot explain this huge CISS magnetoresistance effect. Therefore, this paper proposes a new mechanism, namely, the modification of the tunneling barrier due to charge trapping, to explain this phenomenon. ### Main problems and solutions 1. **Physical mechanism of CISS magnetoresistance**: - **Background**: CISS generates huge spin polarization, making the transmission through chiral molecules significantly spin - selective, providing a new approach for new - type spintronic devices and enantiomer separation. - **Problem**: CISS magnetoresistance violates Onsager's reciprocity relation, manifested as a significant change in resistance when the magnetization direction of the electrode is flipped at zero bias, and traditional spin - polarization - based models cannot explain this phenomenon. 2. **Proposed solutions**: - **Charge - trapping mechanism**: The paper proposes that CISS magnetoresistance originates from charge trapping, which can change the electron tunneling barrier, thus bypassing Onsager's reciprocity relation. Charge trapping is controlled by the non - Hermitian skin effect (NHSE), where dissipation causes the wave function to be exponentially localized at the ferromagnetic - chiral - molecule interface. - **Non - Hermitian skin effect (NHSE)**: When current flows, NHSE will cause the wave function to be exponentially localized on both sides of the interface. Flipping the magnetization or chirality will change the localization direction, thereby changing the occupation of impurity/defect states in the molecule, forming the so - called magneto - chiral charge - pumping effect. 3. **Theoretical explanations and predictions**: - **Theoretical explanation**: The charge - trapping mechanism explains why CISS magnetoresistance can be far greater than the spin polarization of ferromagnets, and why chiral molecules violate the reciprocity relation while chiral metals do not. - **Predicted phenomena**: This theory also predicts some phenomena beyond the traditional CISS framework, such as asymmetric magnetoresistance caused only by the magnetic field (without ferromagnetic electrodes), which has been confirmed in recent experiments. ### Formula summary - **Onsager's reciprocity theorem**: \[ G(B/M)=G(- B/- M)\quad\text{at}\quad V\rightarrow0 \] Here, \(G\) is conductance, \(B\) is the magnetic field, and \(M\) is the magnetization intensity. - **CISS magnetoresistance ratio**: \[ gMR = \frac{|G(+ M)-G(- M)|}{G(+ M)+G(- M)}=\frac{|R(- M)-R(+ M)|}{R(- M)+R(+ M)} \] where \(G\) is conductance and \(R\) is resistance. Through these theories and formulas, the paper not only explains the unique properties of CISS magnetoresistance but also provides new perspectives and methods for further research and application.

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