[More attention should be devoted to the airway reconstruction of lung cancer surgery in China].

Qinghua Zhou

DOI: https://doi.org/10.3779/j.issn.1009-3419.2006.01.01

2006-02-20

Abstract:

What problem does this paper attempt to address?

Area-selective deposition and B $δ$-doping of Si(100) with BCl$_{3}$

K.J. Dwyer,S. Baek,Azadeh Farzaneh,Michael Dreyer,J.R. Williams,R.E. Butera

DOI: https://doi.org/10.1021/acsami.1c10616

2021-03-13

Abstract:B-doped $\delta$-layers were fabricated in Si(100) using BCl$_{3}$ as a dopant precursor in ultrahigh vacuum. BCl$_{3}$ adsorbed readily at room temperature, as revealed by scanning tunneling microscopy (STM) imaging. Annealing at elevated temperatures facilitated B incorporation into the Si substrate. Secondary ion mass spectrometry (SIMS) depth profiling demonstrated a peak B concentration $>$ 1.2(1) $\times$ 10$^{21}$ cm$^{-3}$ with a total areal dose of 1.85(1) $\times$ 10$^{14}$ cm$^{-2}$ resulting from a 30 L BCl$_{3}$ dose at 150 $^{\circ}$C. Hall bar measurements of a similar sample were performed at 3.0 K revealing a sheet resistance of $R_{\mathrm{s}}$ = 1.91 k$\Omega\square^{-1}$, a hole concentration of $n$ = 1.90 $\times$ 10$^{14}$ cm$^{-2}$ and a hole mobility of $\mu$ = 38.0 cm$^{2}$V$^{-1}$s$^{-1}$ without performing an incorporation anneal. Further, the conductivity of several B-doped $\delta$-layers showed a log dependence on temperature suggestive of a two-dimensional system. Selective-area deposition of BCl$_{3}$ was also demonstrated using both H- and Cl-based monatomic resists. In comparison to a dosed area on bare Si, adsorption selectivity ratios for H and Cl resists were determined by SIMS to be 310(10):1 and 1529(5):1, respectively, further validating the use of BCl$_{3}$ as a dopant precursor for atomic precision fabrication of acceptor-doped devices in Si.

Materials Science,Mesoscale and Nanoscale Physics
A First-Principles Investigation into the Adsorption Behavior and Deposition Mechanism of Boron-Containing Gases on Si(100) Surfaces During Chemical Vapor Deposition

Shigang Xu,Zhihong Li,Zhifeng Nie,Hongxing He,Enrui Dai,Yi Zhang,Gang Xie

DOI: https://doi.org/10.1016/j.mtcomm.2024.110444

IF: 3.8

2024-01-01

Materials Today Communications

Abstract:Polysilicon serves as a primary raw material in the production of solar cells and semiconductors. However, its impurity content, particularly boron, poses significant challenges during the chemical vapor deposition (CVD) process. Therefore, it is essential to investigate the behavior of boron impurities during CVD. In this study, we conducted first-principles calculations to explore the adsorption behavior and deposition mechanism of boron-containing gases (BCl3, BHCl2, B2H6) on the Si(100) surface. We considered different adsorption sites and performed a systematic analysis of various adsorption systems' adsorption energy, charge transfer, and electronic properties. Our findings indicate that BCl3, BHCl2, and B2H6 molecules undergo dissociative chemisorption at specific adsorption sites. Moreover, charge transfer analysis confirms that each of these adsorbed molecules functions as an electron acceptor. Subsequent analyses, including total charge density (TCD), charge density difference (CDD), total density of states (TDOS), and projected density of states (PDOS), collectively underscore the robust electronic interactions between the gaseous molecules and the Si(100) surface. Through the computation of transition states and energy barriers across three potential reaction pathways, we identify a predominant sequence: BCl3 -> BCl2+Cl -> BCl+Cl -> B+Cl, that governs boron impurity formation on the Si(100) surface during CVD. Our work elucidates the underlying microscopic mechanisms of boron-containing gas adsorption and deposition in the CVD context.
Bismuth trichloride as a molecular precursor for silicon doping

Eric A. S. Lundgren,Rebecca Conybeare,Taylor J. Z. Stock,Neil J. Curson,Oliver Warschkow,Steven R. Schofield

DOI: https://doi.org/10.1063/5.0145772

IF: 4

2023-04-14

Applied Physics Letters

Abstract:Dopant impurity species can be incorporated into the silicon (001) surface via the adsorption and dissociation of simple precursor molecules. Examples include phosphine (PH 3 ), arsine (AsH 3 ), and diborane (B 2 H 6 ) for the incorporation of phosphorus, arsenic, and boron, respectively. Through exploitation of precursor surface chemistry, the spatial locations of these incorporated dopants can be controlled at the atomic scale via the patterning of a hydrogen lithographic resist layer using scanning tunneling microscopy (STM). There is strong interest in the spatial control of bismuth atoms incorporated into silicon for quantum technological applications; however, there is currently no known precursor for the incorporation of bismuth that is compatible with this STM-based lithographic method. Here, we explore the precursor chemistry (adsorption, diffusion, and dissociation) of bismuth trichloride (BiCl 3 ) on Si(001). We show atomic-resolution STM images of BiCl 3 exposed Si(001) surfaces at low coverage and combine this with density functional theory calculations to produce a model of the surface processes and the observed features. Our results show that, at room temperature, BiCl 3 completely dissociates to produce bismuth ad-atoms, ad-dimers, and surface-bound chlorine, and we explain how BiCl 3 is a strong candidate for a bismuth precursor compound compatible with lithographic patterning at the sub-nanometer scale.

physics, applied
PBr3 adsorption on a chlorinated Si(100) surface with mono- and bivacancies

T. V. Pavlova,V. M. Shevlyuga

2023-11-29

Abstract:For the most precise incorporation of single impurities in silicon, which is utilized to create quantum devices, a monolayer of adatoms on the Si(100) surface and a dopant-containing molecule are used. Here we studied the interaction of a phosphorus tribromide with a chlorine monolayer with mono- and bivacancies in a scanning tunneling microscope (STM) at 77 K. The combination of different halogens in the molecule and the adsorbate layer enabled unambiguous identification of the structures after PBr3 dissociation on Si(100)-Cl. A Cl monolayer was exposed to PBr3 in the STM chamber, which allows us to compare the same surface areas before and after PBr3 adsorption. As a result of this comparison, we detected small changes in the chlorine layer and unraveled the molecular fragments filling mono- and bivacancies. Using density functional theory, we found that the phosphorus atom occupies a bridge position after dissociation of the PBr3 molecule, which primarily bonds to silicon in Cl bivacancies. These findings provide insight into the interaction of a dopant containing molecule with an adsorbate monolayer on Si(100) and can be applied to improve the process of single impurities incorporation into silicon.

Materials Science
Dangling bonds on the Cl- and Br-terminated Si(100) surfaces

T. V. Pavlova,V. M. Shevlyuga,B. V. Andryushechkin,K. N. Eltsov

DOI: https://doi.org/10.1016/j.apsusc.2022.153080

2022-03-11

Abstract:Halogen monolayer on a silicon surface is attracting active attention for applications in electronic device fabrication with individual impurities. To create a halogen mask for the impurities incorporation, it is desirable to be able to remove a single halogen atom from the surface. We report the desorption of individual halogen atoms from the Si(100)-2x1-Cl and -Br surfaces in a scanning tunneling microscope (STM). Silicon dangling bonds (DBs) formed on the Si surface after halogen desorption were investigated using STM and the density functional theory. Three charge states: positive, neutral, and negative were identified. Our results show that the charge states of DBs can be manipulated, which will allow to locally tune the reactivity of the Cl- and Br-terminated Si(100) surfaces.

Materials Science,Mesoscale and Nanoscale Physics
Enhancing the reactivity of Si(100)-Cl toward PBr3 by charging Si dangling bonds

T. V. Pavlova,V. M. Shevlyuga

DOI: https://doi.org/10.1063/5.0178757

2024-08-27

Abstract:The interaction of the PBr3 molecule with Si dangling bonds (DBs) on a chlorinated Si(100) surface was studied. The DBs were charged in a scanning tunneling microscope (STM) and then exposed to PBr3 directly in the STM chamber. Uncharged DBs rarely react with molecules. On the contrary, almost all positively charged DBs were filled with molecule fragments. As a result of the PBr3 interaction with the positively charged DB, the molecule dissociated into PBr2 and Br with the formation of a Si-Br bond and PBr2 desorption. These findings show that charged DBs significantly modify the reactivity of the surface towards PBr3. Additionally, we calculated PH3 adsorption on a Si(100)-2x1-H surface with DBs and found that the DB charge also has a significant impact. As a result, we demonstrated that the positively charged DB with a doubly unoccupied state enhances the adsorption of molecules with a lone pair of electrons.

Materials Science,Mesoscale and Nanoscale Physics
A model for atomic precision p-type doping with diborane on Si(100)-2$\times$1

Quinn Campbell,Jeffrey A. Ivie,Ezra Bussmann,Scott W. Schmucker,Andrew D. Baczewki,Shashank Misra

DOI: https://doi.org/10.48550/arXiv.2010.00129

2020-10-01

Abstract:Diborane (B$_2$H$_6$) is a promising molecular precursor for atomic precision p-type doping of silicon that has recently been experimentally demonstrated [T. {Š}kere{ň}, \textit{et al.,} Nature Electronics (2020)]. We use density functional theory (DFT) calculations to determine the reaction pathway for diborane dissociating into a species that will incorporate as electrically active substitutional boron after adsorbing onto the Si(100)-2$\times$1 surface. Our calculations indicate that diborane must overcome an energy barrier to adsorb, explaining the experimentally observed low sticking coefficient ($< 10^{-4}$ at room temperature) and suggesting that heating can be used to increase the adsorption rate. Upon sticking, diborane has an $\sim 50\%$ chance of splitting into two BH$_3$ fragments versus merely losing hydrogen to form a dimer such as B$_2$H$_4$. As boron dimers are likely electrically inactive, whether this latter reaction occurs is shown to be predictive of the incorporation rate. The dissociation process proceeds with significant energy barriers, necessitating the use of high temperatures for incorporation. Using the barriers calculated from DFT, we parameterize a Kinetic Monte Carlo model that predicts the incorporation statistics of boron as a function of the initial depassivation geometry, dose, and anneal temperature. Our results suggest that the dimer nature of diborane inherently limits its doping density as an acceptor precursor, and furthermore that heating the boron dimers to split before exposure to silicon can lead to poor selectivity on hydrogen and halogen resists. This suggests that while diborane works as an atomic precision acceptor precursor, other non-dimerized acceptor precursors may lead to higher incorporation rates at lower temperatures.

Materials Science,Quantum Physics
Surface modification of chlorine-passivated silicon nanocrystals.

Rong Wang,Xiaodong Pi,Deren Yang

DOI: https://doi.org/10.1039/c2cp43763e

IF: 3.3

2013-01-01

Physical Chemistry Chemical Physics

Abstract:Theoretical understanding of the surface modification of Cl-passivated silicon nanocrystals (Si NCs) is rather limited, in stark contrast to that for H-passivated Si NCs. We now investigate four surface-modification schemes (silanization, alkylation, alkoxylation and aminization) that have been experimentally adopted for Cl-passivated Si NCs in the framework of density functional theory. It is found that aminization most significantly affects the electronic structures of Si NCs by raising the highest occupied molecular orbital (HOMO). The effect of aminization depends on the substituents of amines, rather than the coverage of amine-derived ligands at the NC surface. The lowest unoccupied molecular orbital (LUMO) is more sensitive to the NC size than the HOMO. Only the HOMO is sensitive to surface modification. All the aminization leads to the decrease of the HOMO-LUMO gap despite that the dominant role of quantum confinement effect is maintained in most cases. The current results contribute to the understanding of the optical behavior of Si NCs derived from the surface modification of Cl-passivated ones.
STM-induced desorption and lithographic patterning of Cl-Si(100)-(2x1)

K. J Dwyer,Michael Dreyer,R. E. Butera,K.J Dwyer,R.E. Butera

DOI: https://doi.org/10.48550/arXiv.1808.05690

2018-08-16

Mesoscale and Nanoscale Physics

Abstract:We investigated STM-induced chlorine desorption and lithographic patterning of Cl-terminated Si(100)-(2x1) surfaces at sample temperatures from 4 K to 600 K. STM lithography has previously focused on hydrogen-based chemistry for donor device fabrication. Here, to develop halogen-based chemistries for fabricating acceptor-based devices, we substituted the hydrogen resist with chlorine. Lithographic patterning was explored using both field emission patterning to desorb chlorine from large areas as well as atomic precision patterning to desorb chlorine along one to two dimer rows at a time. We varied the experimental parameters for lithographic patterning and found a positive correlation between pattern line widths and both sample bias voltage and total electron dose. Finally, the use of chlorine, bromine, and iodine as lithographic resists to broaden the range of available chemistries for future device fabrication utilizing halogen-based dopant precursors is discussed.
Reaction mechanism of ZrCl4 with Ge/Si(100)-(2 × 1): A density functional theory study of initial stage of ZrO2 atomic layer deposition on SiGe alloy surface

Wei Chen,david wei zhang,Jie Ren,Hongliang Lü,JianYun Zhang,jing min xu,JiTao Wang,LiKong Wang

DOI: https://doi.org/10.1109/icsict.2004.1436703

2004-01-01

Abstract:The reaction mechanism of ZrCl4 adsorption and dissociation on Ge/Si(100)-(2×1) surface is investigated with density functional theory. The Si-Si, Si-Ge and Ge-Ge one-dimer cluster models are employed in the calculation to represent Ge/Si(100)-(2×1) surface with different Ge composition. The reaction of ZrCl4 with hydroxylated Ge/Si(100)-(2×1) surface forms a bridged ZrCl2 site, while on H-passivated surface ZrCl3 site is formed. The reaction energy barrier of ZrCl4 with H-passivated SiGe surface is much higher than ZrCl4 with hydroxylated SiGe surface, which indicates that the reaction proceeds more slowly on H-passivated surface than on OH-terminated surface. The adsorbates and products on Ge-Ge dimer cluster model of Ge/Si(100)-(2×1) are most stable while structures on Si-Si dimer cluster model are least stable. ©2004 IEEE.
Doped Silicon Nanocrystals from Organic Dopant Precursor by A Sicl4-Based High Frequency Nonthermal Plasma

Shu Zhou,Yi Ding,Xiaodong Pi,Tomohiro Nozaki

DOI: https://doi.org/10.1063/1.4901278

IF: 4

2014-01-01

Applied Physics Letters

Abstract:Doped silicon nanocrystals (Si NCs) are of great interest in demanding low-cost nanodevices because of the abundance and nontoxicity of Si. Here, we demonstrate a cost-effective gas phase approach to synthesize phosphorous (P)-doped Si NCs in which the precursors used, i.e., SiCl4, trimethyl phosphite (TMP), are both safe and economical. It is found that the TMP-enabled P-doping does not change the crystalline structure of Si NCs. The surface of P-doped Si NCs is terminated by both Cl and H. The Si–H bond density at the surface of P-doped Si NCs is found to be much higher than that of undoped Si NCs. The X-ray photoelectron spectroscopy and electron spin resonance results indicate that P atoms are doped into the substitutional sites of the Si-NC core and electrically active in Si NCs. Unintentional impurities, such as carbon contained in TMP, are not introduced into Si NCs.
Reaction Mechanism of ZrCl/sub 4/ with Ge/Si[100]-(2 X 1): a Density Functional Theory Study of Initial Stage of ZrO/sub 2/ Atomic Layer Deiposition on SiGe Alloy Surface

Wei Chen,David Wei Zhang,Jie Ren,Hong-Liang Lu,Jianyun Zhang,Ming Xu,Jitao Wang,Li-Kong Wang

DOI: https://doi.org/10.1109/icsict.2004.1436703

2005-01-01

Abstract:The reaction mechanism of ZrCl/sub 4/ adsorption and dissociation on Ge/Si(100)-(2/spl times/1) surface is investigated with density functional theory. The Si-Si, Si-Ge and Ge-Ge one-dimer cluster models are employed in the calculation to represent Ge/Si(100)-(2/spl times/1) surface with different Ge composition. The reaction of ZrCl/sub 2/ with hydroxylated Ge/Si(100)-(2/spl times/1) surface forms a bridged ZrCl/sub 2/ site, while on H-passivated surface ZrCl/sub 3/ site is formed. The reaction energy barrier of ZrCl/sub 2/ with H-passivated SiGe surface is much higher than ZrCl/sub 4/ with hydroxylated SiGe surface, which indicates that the reaction proceeds more slowly on H-passivated surface than on OH-terminated surface. The adsorbates and products on Ge-Ge dimer cluster model of Ge/Si(100)-(2/spl times/1) are most stable while structures on Si-Si dimer cluster model are least stable.
Multiple Pathways for Dissociative Adsorption of SiCl4 on the Si(100)-c(4×2) Surface.

Jianxun Zhang,Quan Zhu,Jun Li

DOI: https://doi.org/10.3390/sym15010213

2023-01-01

Abstract:The adsorption of silicon tetrachloride (STC, SiCl4) on the silicon surface is a crucial process in polysilicon manufacture. However, the underlying mechanism for the adsorption remains highly uncertain. Here, new dissociative adsorption (DA) reaction pathways involving a flip of a silicon dimer in the first layer and considering physisorption are identified. Different DA patterns, inter-row (IR), inter-dimer (ID), and on-dimer (OD), are confirmed by the density functional theory (DFT) calculations at the PBE-D3(BJ)/TZVP-MOLOPT-GTH level. The stable structures for all minima are searched by global optimization through the artificial bee colony (ABC) algorithm. Findings reveal that the parent molecules dissociate first by breaking one Si-Cl bond, following which the resulting SiCl3 and Cl fragments are attached to adjacent Si-atom sites. Moreover, dimer flipping significantly reduces the energy barrier for chemisorption, mainly due to the change in electronic structure that enhances the interaction of the site with the SiCl3 radical. Physisorption may also be accompanied by dimer flipping to form a stable adsorption structure.
Chemisorption of silicon tetrachloride on silicon nitride: a density functional theory study

Tanzia Chowdhury,Khabib Khumaini,Romel Hidayat,Hye-Lee Kim,Won-Jun Lee

DOI: https://doi.org/10.1039/d3cp05799b

IF: 3.3

2024-03-29

Physical Chemistry Chemical Physics

Abstract:We studied the chemisorption of silicon tetrachloride (SiCl 4 ) on the NH 2 /NH-terminated silicon nitride slab model using density functional theory (DFT) for atomic layer deposition (ALD) of silicon nitride. Initially, two reaction pathways were compared, forming HCl or NH 3 + Cl − as a byproduct. The NH 3 + Cl − complex formation was more exothermic than the HCl formation, with an activation energy of 0.26 eV. The –NH 2 * reaction sites are restored by desorption of HCl from the NH 3 + Cl − complexes at elevated temperatures of 205 °C or higher. Next, three sequential ligand exchange reactions forming Si–N bonds were modeled and simulated. The reaction energies became progressively less exothermic as the reaction progressed, from −1.31 eV to −0.30 eV to 0.98 eV, due to the stretching of Si–N bonds and the distortion of the N–Si–N bond angles. Also, the activation energies for the second and third reactions were 2.17 eV and 1.55 eV, respectively, significantly higher than the 0.26 eV of the first reaction, mainly due to the additional dissociation of the N–H bond. The third Si–N bond formation is unfavorable due to the endothermic reaction and higher activation energy. Therefore, the chemisorbed species would be –SiCl 2 * when the surface is exposed to SiCl 4 .

chemistry, physical,physics, atomic, molecular & chemical
Ligand-Free, Colloidal, and Plasmonic Silicon Nanocrystals Heavily Doped with Boron

Shu Zhou,Zhenyi Ni,Yi Ding,Michihiro Sugaya,Xiaodong Pi,Tomohiro Nozaki

DOI: https://doi.org/10.1021/acsphotonics.5b00568

IF: 7

2016-01-01

ACS Photonics

Abstract:Colloidal heavily doped silicon nanocrystals (Si NCs) exhibiting tunable localized surface plasmon resonance (LSPR) are of great interest in cost-effective, solution-processed optoelectronic devices given the abundance and nontoxicity of Si. In this work we show that tunable plasmonic properties and colloidal stability without the use of ligands can be simultaneously obtained for Si NCs heavily doped with boron (B). The heavily B-doped Si NC colloids are found to be stable in air for months, opening up the possibility of device processing in ambient atmosphere. The optical absorption of heavily B-doped Si NCs reveals that the heavy B doping not only changes the concentration of free carriers that are confined in Si NCs but also modifies the band structure of Si NCs. After heavy B doping both indirect and direct electronic transition energies remarkably decrease in Si NCs because the heavy B doping induced movement of the conduction band toward the band gap could be more significant than that of the Fermi ...
Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

X. D. Pi,R. Gresback,R. W. Liptak,S. A. Campbell,U. Kortshagen

DOI: https://doi.org/10.1063/1.2897291

IF: 4

2008-01-01

Applied Physics Letters

Abstract:Gas-phase plasma-synthesized silicon nanocrystals (Si-NCs) are doped with boron (B) or phosphorous (P) during synthesis. The doping efficiency of B is smaller than that of P, consistent with the theoretical prediction of impurity formation energies. Despite vastly different synthesis conditions, the effect of doping on the photoluminescence (PL) of gas-phase-synthesized Si-NCs is qualitatively similar to that of Si-NCs doped during solid phase nucleation. Studies of oxidation-induced changes in PL and etching-induced changes in dopant concentration show that P resides at or near the Si-NC surface, while B is in the Si-NC cores. The oxidation of Si-NCs follows the Cabrera–Mott mechanism [N. Cabrera and N. F. Mott, Rep. Prog. Phys. 12, 163 (1948)].
Adsorption Behaviors of Chlorosilanes, HCl, and H 2 on the Si(100) Surface: A First-Principles Study

Yajun Wang,Zhifeng Nie,Qijun Guo,Yumin Song,Li Liu

DOI: https://doi.org/10.1021/acsomega.2c04502

IF: 4.1

2022-11-29

ACS Omega

Abstract:The hydrochlorination process is a necessary technological step for the production of polycrystalline silicon using the Siemens method. In this work, the adsorption behaviors of silicon tetrachloride (SiCl(4)), silicon dichloride (SiCl(2)), dichlorosilane (SiH(2)Cl(2)), trichlorosilane (SiHCl(3)), HCl, and H(2) on the Si(100) surface were investigated by first-principles calculations. The different adsorption sites and adsorption orientations were taken into account. The adsorption energy,...

chemistry, multidisciplinary
Sweet taste in the calf: III. Behavioral responses to sweeteners

Goran Hellekant,C. A. Segerstad,T. Roberts

DOI: https://doi.org/10.1016/0031-9384(94)90301-8

1994-09-01

Abstract:
Hafnium oxide and zirconium oxide atomic layer deposition: initial precursor and potential side-reaction product pathways with H/Si(100)-2 x 1

Ryan D Fenno,Mathew D Halls,Krishnan Raghavachari

DOI: https://doi.org/10.1021/jp048663g

2005-03-24

Abstract:Hybrid density functional calculations have been carried out using cluster models of the H/Si(100)-2 x 1 surface to investigate the mechanistic details of the initial surface reactions occurring in the atomic layer deposition of hafnium and zirconium oxides (HfO2 and ZrO2). Reaction pathways involving the metal precursors ZrCl4, Zr(CH3)4, HfCl4, and Hf(CH3)4 have been examined. Pathways leading to the formation of a Zr-Si or Hf-Si linkage show a significant sensitivity to the identity of the leaving group, with chloride loss reactions being both kinetically and thermodynamically less favorable than reactions leading to the loss of a methyl group. The energetics of the Zr(CH3)4 and Hf(CH3)4 reactions are similar with an overall exothermicity of 0.3-0.4 eV and a classical barrier height of 1.1-1.2 eV. For the reaction between H2O and the H/Si(100)-2 x 1 surface, the activation energy and overall reaction enthalpy are 1.6 and -0.8 eV, respectively. Due to contamination, trace amounts of H2O may be encountered by metal precursors, leading to the formation of minor species that can lead to unanticipated side-reaction pathways. Such gas-phase reactions between the halogenated and alkylated metal precursors and H2O are exothermic with small or no reaction barriers, allowing for the possibility of metal precursor hydroxylation before the H/Si surface is encountered. Of the contaminant surface reaction pathways, the most kinetically favorable corresponds to the surface -OH deposition. Interestingly, for the hydroxylated metal precursors, a unique reaction pathway resulting in the direct formation of Si-O-Zr and Si-O-Hf linkages has been identified and found to be the most thermodynamically stable pathway available, being exothermic by approximately 1.0 eV.

[More attention should be devoted to the airway reconstruction of lung cancer surgery in China].

Area-selective deposition and B $δ$-doping of Si(100) with BCl$_{3}$

A First-Principles Investigation into the Adsorption Behavior and Deposition Mechanism of Boron-Containing Gases on Si(100) Surfaces During Chemical Vapor Deposition

Bismuth trichloride as a molecular precursor for silicon doping

PBr3 adsorption on a chlorinated Si(100) surface with mono- and bivacancies

Dangling bonds on the Cl- and Br-terminated Si(100) surfaces

Enhancing the reactivity of Si(100)-Cl toward PBr3 by charging Si dangling bonds

A model for atomic precision p-type doping with diborane on Si(100)-2$\times$1

Surface modification of chlorine-passivated silicon nanocrystals.

STM-induced desorption and lithographic patterning of Cl-Si(100)-(2x1)

Reaction mechanism of ZrCl4 with Ge/Si(100)-(2 × 1): A density functional theory study of initial stage of ZrO2 atomic layer deposition on SiGe alloy surface

Doped Silicon Nanocrystals from Organic Dopant Precursor by A Sicl4-Based High Frequency Nonthermal Plasma

Reaction Mechanism of ZrCl/sub 4/ with Ge/Si[100]-(2 X 1): a Density Functional Theory Study of Initial Stage of ZrO/sub 2/ Atomic Layer Deiposition on SiGe Alloy Surface

Multiple Pathways for Dissociative Adsorption of SiCl4 on the Si(100)-c(4×2) Surface.

Chemisorption of silicon tetrachloride on silicon nitride: a density functional theory study

Ligand-Free, Colloidal, and Plasmonic Silicon Nanocrystals Heavily Doped with Boron

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Adsorption Behaviors of Chlorosilanes, HCl, and H 2 on the Si(100) Surface: A First-Principles Study

Sweet taste in the calf: III. Behavioral responses to sweeteners

Hafnium oxide and zirconium oxide atomic layer deposition: initial precursor and potential side-reaction product pathways with H/Si(100)-2 x 1