Abstract:We have studied the effects of source and bias powers, pressure, and feed gas composition on the shapes of SiO2-masked crystalline silicon features etched in a transformer-coupled high density plasma system. Higher etching rates were obtained at higher source and bias powers, and higher pressure. The etching rates of isolated and nested trenches, isolated lines, and holes were nearly the same, indicating a negligible pattern density dependence. We did, however, observe a very weak decrease in etch rates with increasing aspect ratio at 2 mTorr in a pure Cl2 plasma. At 10 mTorr, no aspect ratio dependence was observed, except at the highest source and bias powers. Microtrenching was observed under certain plasma conditions and could be reduced by using higher bias powers. At 10 mTorr in a pure chlorine plasma, we observed a slight taper at the bottoms of the etched features and the formation of narrow microtrenches near feature corners. At 2 mTorr, the microtrenches were broader and overlapped near the center of narrow trenches to form pyramid-shaped trench bottoms. When a HBr plasma was used instead of Cl2, the etching rate decreased by 50% but the etching profiles were more vertical and the trench bottoms were flat. Isolated lines etched in the HBr plasma, however, revealed broad but shallow microtrenches near the edges of the line, suggesting that the flat trench bottoms were a result of broad microtrenches that overlapped. Trenches of 3 μm depth and aspect ratios of 7 have been obtained using either HBr or Cl2, exhibiting similar microfeatures as observed when etching shallower trenches.

STM-induced desorption and lithographic patterning of Cl-Si(100)-(2x1)

Local removal of silicon layers on Si(100)-2x1 with chlorine-resist STM lithography

Dangling bonds on the Cl- and Br-terminated Si(100) surfaces

"Stripping" the carbon atom of methyl halide by a cationic holmium complex: a gas-phase study.

Surface modification of chlorine-passivated silicon nanocrystals.

Reaction of BCl3 with H- and Cl-terminated Si(1 0 0) as a pathway for selective, monolayer doping through wet chemistry

Nonlocal STM Manipulation of Chlorobenzene on Si(111)-7 × 7: Potentials, Kinetics, and First-Principles Molecular Dynamics Calculations for Open Systems

PBr3 adsorption on a chlorinated Si(100) surface with mono- and bivacancies

Tuning the Work Function of Si(100) Surface by Halogen Absorption: A DFT Study

Theoretical study of chlorine for silicon nanocrystals

Molecular-Beam Study of Laser-Induced Chemical Etching of Si(111) by Chlorine Molecules

Non-local Atomic Manipulation on Semiconductor Surfaces in the STM: the Case of Chlorobenzene on Si(111)-7×7.

Solubility Change Behavior of Fluoroalkyl Ether-Tagged Dendritic Hexaphenol under Extreme UV Exposure

Molecular dynamics simulation of Si trench etching with SiO2 hard masks

Atomistic description of Si etching with HCl

Electrochemistry Of Hypochlorite At Silicon In Alkaline Etchants - Applications In Device Fabrication

Enhancing the reactivity of Si(100)-Cl toward PBr3 by charging Si dangling bonds

A First-Principles Investigation into the Adsorption Behavior and Deposition Mechanism of Boron-Containing Gases on Si(100) Surfaces During Chemical Vapor Deposition

Bismuth trichloride as a molecular precursor for silicon doping

Effects of plasma conditions on the shapes of features etched in Cl2 and HBr plasmas. I. Bulk crystalline silicon etching