Abstract:Low temperature carrier transport properties in two-dimensional (2D) semiconductor systems can be theoretically well-understood within a mean-field type RPA-Boltzmann theory as being limited by scattering from screened Coulomb disorder arising from random quenched charged impurities in the environment. In the current work, we derive a number of simple analytical formula, supported by realistic numerical calculations, for the relevant density, mobility, and temperature range where 2D transport should manifest strong intrinsic (i.e., arising purely from electronic effects and not from phonon scattering) metallic temperature dependence in different semiconductor materials arising entirely from the 2D screening properties, thus providing an explanation for why the strong temperature dependence of the 2D resistivity can only be observed in high-quality and low-disorder (i.e., high-mobility) 2D samples and also why some high-quality 2D materials (i.e., n-GaAs) manifest much weaker metallicity than other materials. We also discuss effects of interaction and disorder on the 2D screening properties in this context as well as compare 2D and 3D screening functions to comment why such a strong intrinsic temperature dependence arising from screening cannot occur in 3D metallic carrier transport. Experimentally verifiable predictions are made about the quantitative magnitude of the maximum possible low-temperature metallicity in 2D systems and the scaling behavior of the temperature scale controlling the quantum to classical crossover where the system reverses the sign of the temperature derivative of the 2D resistivity at high temperatures.

Metallic low-temperature resistivity in 2D over an extended temperature range

Critical Behavior of a Strongly Disordered 2D Electron System: the Cases of Long-Range and Screened Coulomb Interactions

Nonmonotonic Temperature Dependence of the Hall Resistance for 2D Electron System in Si

On the Cooling of Electrons in a Silicon Inversion Layer

Analysis of the resistance in p-SiGe over a wide temperature range

Hot Electron Effects in the 2D Superconductor-Insulator Transition

Metallicity and its low temperature behavior in dilute 2D carrier systems

Temperature Dependence of the Conductivity of an Electronic Crystal

Screening and transport in 2D semiconductor systems at low temperatures

Novel Properties of The Apparent Metal-Insulator Transition in Two-Dimensional Systems

Sums of powers of consecutive q-integers

Conductivity freeze-out in isotopically pure -28 at millikelvin temperatures

Metal-insulator transition and low-density phases in a strongly-interacting two-dimensional electron system

DC and Ac Measurements on Metal/a-Si:H/metal Room Temperature Quantised Resistance Devices

Low-Temperature 2D/2D Ohmic Contacts in WSe$_2$ Field-Effect Transistors as a Platform for the 2D Metal-Insulator Transition

The metal-insulator-like and insulator-metal-like behaviors in antimony.

Conductivity Freeze-Out in Isotopically Pure Si-28 at milli-Kelvin Temperatures

Metal-insulator transition in 2D: a role of the upper Habbard band

Anomalous frequency and temperature dependent scattering in the dilute metallic phase in lightly doped-SrTiO$_3$

Universal behavior of the bosonic metallic ground state in a two-dimensional superconductor

Approaching Zero-Temperature Metallic States in Mesoscopic Superconductor-Normal-Superconductor Arrays