Identifying a Region of Interest in Site- and Stage-Specific Colon Cancer on Chromosome 13

N. Sivarajasingham,Richard P. Baker,J. Tilsed,J. Greenman,J. Monson,L. Cawkwell

DOI: https://doi.org/10.1245/ASO.2003.03.004

IF: 4.339

Annals of Surgical Oncology

Abstract:

What problem does this paper attempt to address?

Improved electro-optical and photoelectric performance of GaN-based micro-LEDs with an atomic layer deposited AlN passivation layer.

Chao Shen,Dingbo Chen,Zhe Wang,Fangchen Hu,Wenjun Liu,David-Wei Zhang,H. Lu,N. Chi

DOI: https://doi.org/10.1364/oe.439596

IF: 3.8

2021-10-07

Optics Express

Abstract:The quantum efficiency of GaN-based micro-light-emitting diodes (micro-LEDs) is of great significance for their luminescence and detection applications. Optimized passivation process can alleviate the trapping of carriers by sidewall defects, such as dangling bonds, and is regarded as an effective way to improve the quantum efficiency of micro-LEDs. In this work, an AlN passivation layer was prepared by atomic layer deposition to improve the electro-optical and photoelectric conversion efficiency in GaN-based micro-LEDs. Compared to conventional Al2O3 passivation, the AlN passivation process has a stronger ability to eliminate the sidewall defects of micro-LEDs due to the homogeneous passivation interface. Our experiments show that the AlN-passivated device exhibits two orders of magnitude lower forward leakage and a smaller ideality factor, which leads to significantly enhanced external quantum efficiency (EQE). For 25*25 μm2 micro-LEDs, the EQE of the AlN-passivated device was 18.3% and 57.7% higher than that of the Al2O3-passivated device in luminescence application and detection application, respectively.

Engineering,Medicine,Materials Science,Physics
The Person and the Partner: Individual Differences Moderate the Relationship Between Partner Feedback and Condom Use

T. MacDonald,C. McKenna,Leigh C Mouck

DOI: https://doi.org/10.1007/s10461-015-1153-4

AIDS and Behavior

Abstract:
Efficiency boosting of 236 nm AlGaN-based micro-LEDs

Hongbo Li,Shunpeng Lu,Licai Zhu,Wenchao Sun,Jiangxiao Bai,Jialong Hao,Shanli Zhang,Ke Jiang,Zhiming Shi,Yuping Jia,Yang Chen,Jianwei Ben,Mingrui Liu,Hang Zang,Tong Wu,Dabing Li,Xiaojuan Sun

DOI: https://doi.org/10.1088/1361-6463/ad714b

2024-08-24

Journal of Physics D Applied Physics

Abstract:In this study, 236 nm AlGaN-based deep ultraviolet (DUV) Micro-LEDs with different sized P-contact areas are designed and fabricated, and the sidewall is restored by wet chemical treatment method with KOH solution. The results reveal that proper KOH treatment could effectively remove plasma damaged materials and clearly show the formation of m-plane facets. Compared with untreated Micro-LEDs, the reverse leakage current of the treated Micro-LEDs under -10 V decreases by up to 91.7% and the specific contact resistivity reduces from 6.94 Ωcm2 to 0.07 Ωcm2. The underlying mechanism is that KOH treatment removes the sidewall defects which leads to surface nonradiative recombination sites and surface leakage. Moreover, KOH treatment also removes contaminations on the P+-GaN surface and leads to lower specific contact resistivity. However, too long treatment also destructs the 20 nm P+-GaN layer, which results in higher voltage but less DUV light absorption. As a result, peak light output power density increases from 2.12 W/cm2 to 4.01 W/cm2, representing an 89.2% increase. The efficiency enhancement of Micro-LEDs is anticipated to facilitate the development of DUV Micro-LEDs in maskless lithography and high-capacity DUV non-line of sight communication.

physics, applied
Improving AlGaN-based deep-ultraviolet light-emitting diodes: SiO2 passivation and size optimization for enhanced optoelectronic performance

Zesen Liu,Jianhong Zhang,Jiandong Ye,Yating Shi,Jie Fu,Yiwang Wang,Weizong Xu,Dong Zhou,Feng Zhou,Rong Zhang,Hai Lu,Fang-Fang Ren

DOI: https://doi.org/10.1063/5.0193027

IF: 4

2024-04-15

Applied Physics Letters

Abstract:The authors investigate 275-nm AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) of varied dimensions (100, 150, 200, and 300 μm) with or without SiO2 passivation. The results indicate SiO2 passivation significantly enhances the emission intensity and external quantum efficiency in smaller LEDs (100 μm) by mitigating sidewall defects and non-radiative recombination. Conversely, SiO2 passivation adversely affects larger LEDs (150, 200, and 300 μm) due to increased current crowding and heat accumulation. The study emphasizes the tradeoffs between sidewall optimization and heat management in micro-sized DUV LEDs. These insights are critical for the strategic development of efficient DUV LEDs tailored for practical applications.

physics, applied
Breaking the Transverse Magnetic-Polarized Light Extraction Bottleneck of Ultraviolet-C Light-Emitting Diodes Using Nanopatterned Substrates and an Inclined Reflector

Wei Luo,Sharif Md. Sadaf,Tashfiq Ahmed,Houjin Wang,Yongde Li,Ye Yuan,Weiyun Wang,Shangfeng Liu,Tai Li,Qi Wang,Junjie Kang,Xinqiang Wang,Md Zunaid Baten,Md Omar Faruque,Md Arif Hossain

DOI: https://doi.org/10.1021/acsphotonics.2c01198

IF: 7

2022-08-31

ACS Photonics

Abstract:AlGaN-based light-emitting diodes (LEDs) operating in the deep-ultraviolet (UV-C) spectral range (210–280 nm) exhibit extremely low external quantum efficiency, primarily due to the presence of large threading dislocations and extremely low transverse magnetic (TM) light extraction efficiency. Here, we have demonstrated that such critical issues can be potentially addressed by using AlGaN quantum-well heterostructures grown on a hexagonal nanopatterned sapphire substrate (NPSS) and a flip-chip-bonded inclined Al mirror. Our finite-difference time domain-based numerical analysis confirms that the maximum achievable efficiency is limited by the poor light extraction efficiency due to the extremely low TM-polarized emission. In our experiment, with the usage of a meticulously designed hexagonal NPSS and an inclined Al side wall mirror (>90% reflective in the UV-C wavelength), the AlGaN quantum-well UV-C LEDs showed nearly 20% improvement in the light output power and efficiency compared to the conventional flat flip-chip LEDs. The UV-C LEDs operating at ∼275 nm exhibit a maximum output power of ∼25 mW at 150 mA, a peak external quantum efficiency of ∼4.7%, and a wall plug efficiency of ∼3.25% at 15 mA under continuous wave (CW) conditions. The presented approach opens up new opportunities to increase the extraction of UV light in the challenging spectral range by using properly designed patterned substrates and an engineered Al reflector.

physics, condensed matter,optics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
Continuous Improvement of Proactive Event-driven Decision Making through Sensor-Enabled Feedback (SEF)

Alexandros Bousdekis,Nikos Papageorgiou,B. Magoutas,Dimitris Apostolou,G. Mentzas

DOI: https://doi.org/10.5220/0005866701660173

2016-04-25

Abstract:The incorporation of feedback in the proactive event-driven decision making can improve the recommendations generated and be used to inform users online about the impact of the recommended action following its implementation. We propose an approach for learning cost functions from Sensor-Enabled Feedback (SEF) for the continuous improvement of proactive event-driven decision making. We suggest using Kalman Filter, dynamic Curve Fitting and Extrapolation to update online (i.e. during action implementation) cost functions of actions, with the aim to improve the parameters taken into account for generating recommendations and thus, the recommendations themselves. We implemented our approach in a real proactive manufacturing scenario and we conducted extensive experiments in order to validate its effectiveness.
Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices

Bejoys Jacob,Filipe Camarneiro,Jérôme Borme,Oleksandr Bondarchuk,Jana B. Nieder,Bruno Romeira

DOI: https://doi.org/10.1021/acsaelm.2c00195

2022-06-30

Abstract:Numerous efforts have been devoted to improve the electronic and optical properties of III-V compound materials via reduction of their nonradiative states, aiming at highly-efficient III-V sub-micrometer devices. Despite many advances, there is still a controversial debate on which combination of chemical treatment and capping dielectric layer can best reproducibly protect the crystal surface of III-Vs, while being compatible with readily available plasma deposition methods. This work reports on a systematic experimental study on the role of sulfide ammonium chemical treatment followed by dielectric coating in the passivation effect of GaAs/AlGaAs nanopillars. Our results conclusively show that the best surface passivation is achieved using ammonium sulfide followed by encapsulation with a thin layer of silicon nitride by low frequency plasma enhanced chemical deposition. Here, the sulfurized GaAs surfaces, the high level of hydrogen ions and the low frequency (380 kHz) excitation plasma that enable intense bombardment of hydrogen, all seem to provide a combined active role in the passivation mechanism of the pillars. We observe up to a 29-fold increase of the photoluminescence (PL) integrated intensity for the best samples as compared to untreated nanopillars. X-ray photoelectron spectroscopy analysis confirms the best treatments show remarkable removal of gallium and arsenic native oxides. Time-resolved micro-PL measurements display nanosecond lifetimes resulting in a record-low surface recombination velocity for dry etched GaAs nanopillars. We achieve robust, stable and long-term passivated nanopillar surfaces which creates expectations for remarkable high internal quantum efficiency (IQE>0.5) in nanoscale light-emitting diodes. The enhanced performance paves the way to many other nanostructures and devices such as miniature resonators, lasers, photodetectors and solar cells.

Optics,Mesoscale and Nanoscale Physics,Materials Science
The composited high reflectivity p-type electrodes with patterned ITO for AlGaN-based ultraviolet light emitting diodes

J. Lang,F. J. Xu,J. M. Wang,L. S. Zhang,Z. H. Sun,H. D. Zhang,X. Q. Guo,Z. Y. Zhang,C. Ji,F. Y. Tan,C. Z. Ji,X. N. Kang,X. L. Yang,N. Tang,Z. Z. Chen,X. Q. Wang,W. K. Ge,B. Shen

DOI: https://doi.org/10.1063/5.0216179

IF: 4

2024-07-01

Applied Physics Letters

Abstract:Composited p-type electrodes with high reflectivity have been investigated in AlGaN-based ultraviolet light emitting diodes (UV-LEDs) to improve the light extraction efficiency, which are composed of a patterned ITO layer and an Al reflector. It is verified that the patterned ITO with a thickness of 30 nm can not only well form Ohmic contact with p-GaN capping layer, but also be nearly 90% transparent to ultraviolet light, and thus presenting a reflectivity of 73% at 280 nm when combined with an Al reflector. Further experimental efforts confirm that the performance of the UV-LEDs is dramatically improved with such p-type electrodes. The maximum light output power and wall plug efficiency in the current range of 0–100 mA are severally increased by 49.8% and 54.2% compared to the device with traditional Ni/Au electrodes.

physics, applied
Effects of Passivation Materials on Performance of Deep Ultraviolet LEDs

CHEN Wenxin,ZHONG Zhibai,HAN Yanjun,LUO Yi,LIANG Zhaoxuan

DOI: https://doi.org/10.16818/j.issn1001-5868.2013.05.019

2013-01-01

Abstract:The effects of silicon dioxide(SiO2),polyimide,silicon nitride(SiNx)/spin-onglass(SOG)layer on the current leakage and the stabilities of deep ultraviolet LEDs were studied.The results show that for LEDs with no passivation,or with SiO2layer,polyimide layer and SiNx/SOG layers,the leakage ratio is 100%,100%,55%and 15%,respectively.After the burn-in time exceeds 1,000hours under stress test condition,theoptical power degradation of the latter two types is 67% and 20%,respectively.The analysis shows that the application of the SiNx/SOG passivation can both reduce the surface charge recombination rate and alleviate electrode shorts during flip chip bonding.In addition,the ability of SOG to planarize rough surface has reduced electrode shorts and surface leakage resulted from pits and bumps of the epitaxial AlGaN layer,therefore,the performance and lifetime of deep ultraviolet LEDs are improved dramatically.
Improving Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Combining Thinning P-Algan/p-gan Layer with Ni/Au/Al High-Reflectivity Electrodes

Liubing Wang,Fujun Xu,Jing Lang,Jiaming Wang,Lisheng Zhang,Xueqi Guo,Chen Ji,Xiangning Kang,Xuelin Yang,Xinqiang Wang,Zhixin Qin,Weikun Ge,Bo Shen

DOI: https://doi.org/10.1109/jphot.2023.3250433

IF: 2.4

2023-01-01

IEEE Photonics Journal

Abstract:Improving light extraction efficiency (LEE) of AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs) has been attempted by thinning the p-AlGaN/p-GaN layer and adopting Ni/Au/Al composite electrodes. It is found that the thin p-AlGaN/p-GaN layer can reduce the light absorption and the Ni/Au/Al electrodes achieve high reflectivity and Ohmic contact to ensure the enhancement of the light extraction and maintain fine electrical properties. By this approach, the maximum external quantum efficiency of the DUV-LEDs with optimized Ni/Au/Al reflective electrodes is increased by 40%, compared to that with conventional Ni/Au electrodes over the whole current range.
Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting Diodes

Jing Lang,Fujun Xu,Jiaming Wang,Lisheng Zhang,Xuzhou Fang,Ziyao Zhang,Xueqi Guo,Chen Ji,Chengzhi Ji,Fuyun Tan,Yong Wu,Xuelin Yang,Xiangning Kang,Zhixin Qin,Ning Tang,Xinqiang Wang,Weikun Ge,Bo Shen

DOI: https://doi.org/10.1002/aelm.202300840

IF: 6.2

2025-01-01

Advanced Electronic Materials

Abstract:AbstractAlGaN‐based ultraviolet light‐emitting diodes (UV‐LEDs) have the advantages of mercury (Hg) pollution free, small size, high efficiency, and so on, and are widely used in military, medical, and industrial fields, which are considered to be the most promising alternative to the traditional Hg lamps. Great efforts are made over the past few decades to improve the device performance, thereby meeting the commercial production and application requirements of UV‐LEDs, which is always accompanied by a series of interesting physical topics. In this review, the recent research progress in performance of AlGaN‐based UV‐LEDs is summarized from the perspectives of electrical injection, electro‐optical conversion, and light extraction, which are responsible for the operation of devices. The detailed discussions include the major challenges, the corresponding technological breakthroughs, and also the outlook of material growth, energy band modulation, as well as device fabrication involved in UV‐LEDs, which are expected to be helpful for the thorough comprehension of device physics and further development of AlGaN‐based UV‐LEDs.
Improved Light Extraction Efficiency of AlGaN Deep-Ultraviolet Light Emitting Diodes Combining Ag-nanodots/Al Reflective Electrode with Highly Transparent P-Type Layer.

N. Zhang,F. J. Xu,J. Lang,L. B. Wang,J. M. Wang,Y. H. Sun,B. Y. Liu,N. Xie,X. Z. Fang,X. L. Yang,X. N. Kang,X. Q. Wang,Z. X. Qin,W. K. Ge,B. Shen

DOI: https://doi.org/10.1364/oe.416826

IF: 3.8

2021-01-01

Optics Express

Abstract:Enhancement of light extraction efficiency (LEE) of AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs) has been attempted by adopting Ag-nanodots/Al reflective electrodes on a highly transparent complex p-type layer. By thinning the p-GaN to several nm, highly DUV transparent p-type layer is achieved, making it meaningful for the application of reflective electrodes composed of Ag-nanodots and Al film to allow most light emitted upward to be reflected back to the sapphire side. By this approach, the maximum light output power and external quantum efficiency of the DUV-LEDs with optimized Ag nanodots/Al electrodes are severally increased by 52% and 58%, respectively, compared to those with traditional Ni/Au electrodes when the current is below 200 mA.
B-50/GAP-43 mRNA expression in cultured primary Schwann cells is regulated by cyclic AMP.

L. Plantinga,L. Schrama,B. Eggen,W. Gispen,J. Verhaagen,G. Lemke

DOI: https://doi.org/10.1097/00001756-199412000-00015

1994-12-20

Neuroreport

Abstract:Following peripheral nerve crush or transection, B-50 mRNA expression increased dramatically in the distal nerve stump. This increase has been fully attributed to an up-regulation of B-50 synthesis in reactive Schwann cells. Here we describe that B-50 mRNA expression in primary Schwann cell cultures is strongly down-regulated by cyclic AMP. Treatment of neonatal Schwann cell cultures with as low as 20 nM forskolin decreased B-50 mRNA expression. We show that B-50 promoter P2, but not P1, is active in Schwann cells and that the activity of P2 is inhibited 2.5 fold by forskolin. P2 does not contain a consensus sequence of a known cyclic AMP responsive element suggesting that the effect of forskolin is indirect.
UVC LEDs on Bulk AlN Substrates Using Silicon Nanomembranes for Efficient Hole Injection

Sang June Cho,Dong Liu,Jung-Hun Seo,Rafael Dalmau,Kwangeun Kim,Jeongpil Park,Deyin Zhao,Xin Yin,Yei Hwan Jung,In-Kyu Lee,Munho Kim,Xudong Wang,John D. Albrecht,Weidong Zhou Baxter Moody,Zhenqiang Ma

DOI: https://doi.org/10.48550/arXiv.1707.04223

2017-07-14

Abstract:As UV LEDs are explored at shorter wavelengths (< 280 nm) into the UVC spectral range, the crystalline quality of epitaxial AlGaN films with high Al compositions and inefficient hole injection from p-type AlGaN severely limit the LED performance and development. In this work, we report on 237 nm light emission with a record light output power of 265 uW from AlN/Al0.72Ga028N multiple quantum well UVC LEDs using bulk AlN substrates and p-type silicon nanomembrane contact layers for significantly improved AlGaN film quality and hole injection, respectively. No intensity degradation or efficiency droop was observed up to a current density of 245 A/cm2, which is attributed to the low dislocation density within AlGaN films, the large concentration of holes from p-Si, and efficient hole-transport to the active region. Additionally, the emission peak at 237 nm is dominant across the electroluminescence spectrum with no significant parasitic emissions observed. This study demonstrates the feasibility of using p-Si as a hole injector for UVC LEDs, which can be extended to even shorter wavelengths where hole injection from chemically doped AlGaN layers is not feasible.

Applied Physics
Enhancing the optical and electrical properties of AlGaN ultraviolet-C micro-LED via a hybrid scheme of plasma and chemical treatment

Feng Feng,Yibo Liu,Ke Zhang,Mengyuan Zhanghu,Ka-Wah Chan,Ke Xu,Hoi-Sing Kwok,Zhaojun Liu

DOI: https://doi.org/10.1063/5.0123409

IF: 4

2023-04-02

Applied Physics Letters

Abstract:Ultraviolet band C (UV-C) micro light-emitting diodes (micro-LEDs) provide a high energy light emission of 200–280 nm, which are brilliantly utilized in optogenetics, communications, and fluorescence. However, the limited device efficiency notably restricts the grand potential application field. In this work, three types of 20 × 20 μ m 2 UV-C micro-LEDs with the peak wavelength of 269 nm are fabricated by different etching strategies, including an inductively coupled plasma (ICP), post-ICP tetramethylammonium hydroxide, and a hybrid scheme combining plasma and chemical treatment. By enhancing the radiative recombination and light extraction, the hybrid scheme improves the peak external quantum efficiency of UV-C micro-LEDs to 3.45%, an elevation of 57.5% compared with ICP. A step advance in the forward injection current and ideality factor is also found on the devices fabricated by the hybrid scheme due to better contact on the AlGaN surface.

physics, applied
Manipulating the Band Bending of InGaN/GaN Quantum Dots in Nanowires by Surface Passivation

Z. L. Wang,Z. B. Hao,J. D. Yu,C. Wu,L. Wang,J. Wang,C. Z. Sun,B. Xiong,Y. J. Han,H. T. Li,Y. Luo

DOI: https://doi.org/10.1021/acs.jpcc.7b00578

2017-01-01

Abstract:InGaN/GaN quantum dots (QD) in nanowires exhibit excellent optical properties and are promising candidates for nanoscale optoelectronic devices. However, a large amount of surface states would cause low quantum efficiency more severely than bulk materials, through not only nonradiative recombination centers but also upward band bending. Therefore, it is necessary to control the band bending effect in order to improve the quantum efficiency of QDs. In this work, quantitative measurements are carried out by ultraviolet photoelectron spectroscopy (UPS) to describe the band bending effect in InGaN/GaN QD in nanowires coated with three different dielectric layers including SiNx, Al2O3, and SiO2. Furthermore, their passivation mechanisms are investigated by photoluminescence (PL), time-resolved PL. Contrary to SiO2 passivation, the SiNx and Al2O3 passivation nanowires demonstrate notable improvements in emission intensity. Most essentially, all experimental findings are consilience with the physical model that ...
Different sources of maternal selenium affect selenium retention, antioxidant status, and meat quality of 56-day-old offspring of broiler breeders.

L. Zhang,Y. Wang,Y. Zhou,L. Zheng,X. Zhan,Q. Pu

DOI: https://doi.org/10.3382/ps.2013-03605

IF: 4.014

2014-09-01

Poultry Science

Abstract:The maternal effect of different Se source in offspring of young broiler breeders has been reported, but the lasting maternal effect of different sources of Se on offspring of breeders has received limited attention, so this study was conducted to investigate the effects of different maternal Se sources on Se retention, antioxidant status, and meat quality of 56-d-old offspring of broiler breeders. A total of two hundred forty 39-wk-old Lingnan Yellow broiler breeders were randomly distributed into 2 treatments, each of which was replicated 3 times with 40 birds per replicate, with a 14-d pretreatment and 56-d trial period. The treatments were fed a basal corn-soybean diet (0.04 mg∙kg⁻¹ Se) supplemented with 0.3 mg∙kg⁻¹ sodium selenite (SS) or selenomethionine (Se-Met). Fertile eggs were collected for incubation, after which 180 healthy chicks from each treatment were selected and randomly allocated into 3 replicates, with 60 birds per replicate. All the chicks were fed the same basal diet (0.04 mg∙kg⁻¹ Se) for 56 d. The Se concentrations in serum and tissues (liver, kidney, and breast muscle) of the 56-d-old offspring were significantly (P < 0.01) increased by maternal Se-Met intake compared with maternal SS intake. The antioxidant status of the 56-d-old offspring was greatly improved by maternal Se-Met supplementation in contrast with maternal SS supplementation, which was shown by increased glutathione peroxidase activity in serum and breast muscle (P < 0.01), glutathione concentration in serum (P < 0.05), and total antioxidant capability in pancreas (P < 0.01), as well as cytosolic glutathione peroxidase mRNA abundance in breast muscle, liver (P < 0.01), and pancreas (P < 0.05). The maternal Se-Met treatment was more effective in maintaining the shape of liver and pancreas cells, cell nuclei, chromatin, as well as cell membrane structure, and more organelles were observed in liver cells. The maternal Se-Met treatment had significant (P < 0.05) reduced the 48-h drip loss of 56-d-old offspring in comparison with maternal SS treatment. The results suggest that maternal Se-Met diet is superior to maternal SS diet in increasing Se retention and improving antioxidant status and meat quality of 56-d-old offspring.
Vertical semiconductor deep ultraviolet light emitting diodes on a nanowire-assisted aluminum nitride buffer layer

Qihua Zhang,Heemal Parimoo,Eli Martel,Songrui Zhao

DOI: https://doi.org/10.1038/s41598-022-11246-0

IF: 4.6

2022-05-04

Scientific Reports

Abstract:Vertical light-emitting diodes (LEDs) have many advantages such as uniform current injection, excellent scalability of the chip size, and simple packaging process. Hitherto, however, technologically important semiconductor aluminum gallium nitride (AlGaN) deep ultraviolet (UV) LEDs are mainly through lateral injection. Herein, we demonstrate a new and practical path for vertical AlGaN deep UV LEDs, which exploits a thin AlN buffer layer formed on a nanowire-based template on silicon (Si). Such a buffer layer enables in situ formation of vertical AlGaN deep UV LEDs on Si. Near Lambertian emission pattern is measured from the top surface. The decent reflectivity of Si in the deep UV range makes such a configuration a viable low-cost solution for vertical AlGaN deep UV LEDs. More importantly, the use of such a thin AlN buffer layer can allow an easy transfer of device structures to other carrier wafers for vertical AlGaN deep UV LEDs with ultimately high electrical and optical performance.

multidisciplinary sciences
Photonic Crystal Tunnel Junction Deep Ultraviolet Light Emitting Diodes with Enhanced Light Extraction Efficiency

Walter Shin,Ayush Pandey,Xianhe Liu,Yi Sun,Zetian Mi

DOI: https://doi.org/10.1364/oe.380739

IF: 3.8

2019-01-01

Optics Express

Abstract:We report on the demonstration of top emitting AlGaN tunnel junction deep ultraviolet (UV) light emitting didoes (LEDs) operating at ∼267 nm. We show, both theoretically and experimentally, that the light extraction efficiency can be enhanced by nearly a factor of two with the incorporation of AlGaN nanowire photonic crystal structures. A peak wall-plug efficiency (WPE) ∼3.5% and external quantum efficiency (EQE) ∼5.4% were measured for AlGaN LEDs directly on-wafer without any packaging. This work demonstrates a viable path for achieving high efficiency deep UV LEDs through the integration of AlGaN planar and nanoscale structures.
Performance Improvement of Gan-Based Near-Uv Leds with Ingan/Algan Superlattices Strain Relief Layer and Algan Barrier

Chuanyu Jia,Tongjun Yu,Xiaohui Feng,Kun Wang,Guoyi Zhang

DOI: https://doi.org/10.1016/j.spmi.2016.07.001

IF: 3.22

2016-01-01

Superlattices and Microstructures

Abstract:The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. (C) 2016 Elsevier Ltd. All rights reserved.

Identifying a Region of Interest in Site- and Stage-Specific Colon Cancer on Chromosome 13

Improved electro-optical and photoelectric performance of GaN-based micro-LEDs with an atomic layer deposited AlN passivation layer.

The Person and the Partner: Individual Differences Moderate the Relationship Between Partner Feedback and Condom Use

Efficiency boosting of 236 nm AlGaN-based micro-LEDs

Improving AlGaN-based deep-ultraviolet light-emitting diodes: SiO2 passivation and size optimization for enhanced optoelectronic performance

Breaking the Transverse Magnetic-Polarized Light Extraction Bottleneck of Ultraviolet-C Light-Emitting Diodes Using Nanopatterned Substrates and an Inclined Reflector

Continuous Improvement of Proactive Event-driven Decision Making through Sensor-Enabled Feedback (SEF)

Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices

The composited high reflectivity p-type electrodes with patterned ITO for AlGaN-based ultraviolet light emitting diodes

Effects of Passivation Materials on Performance of Deep Ultraviolet LEDs

Improving Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Combining Thinning P-Algan/p-gan Layer with Ni/Au/Al High-Reflectivity Electrodes

Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting Diodes

Improved Light Extraction Efficiency of AlGaN Deep-Ultraviolet Light Emitting Diodes Combining Ag-nanodots/Al Reflective Electrode with Highly Transparent P-Type Layer.

B-50/GAP-43 mRNA expression in cultured primary Schwann cells is regulated by cyclic AMP.

UVC LEDs on Bulk AlN Substrates Using Silicon Nanomembranes for Efficient Hole Injection

Enhancing the optical and electrical properties of AlGaN ultraviolet-C micro-LED via a hybrid scheme of plasma and chemical treatment

Manipulating the Band Bending of InGaN/GaN Quantum Dots in Nanowires by Surface Passivation

Different sources of maternal selenium affect selenium retention, antioxidant status, and meat quality of 56-day-old offspring of broiler breeders.

Vertical semiconductor deep ultraviolet light emitting diodes on a nanowire-assisted aluminum nitride buffer layer

Photonic Crystal Tunnel Junction Deep Ultraviolet Light Emitting Diodes with Enhanced Light Extraction Efficiency

Performance Improvement of Gan-Based Near-Uv Leds with Ingan/Algan Superlattices Strain Relief Layer and Algan Barrier