Abstract:AlGaN DUV light emitting diodes (DUV-LEDs) (275 nm emission) are safe, eco-friendly and smart alternatives for inactivating viruses and bacteria. However, DUV-LEDs suffer from the main bottleneck of low external quantum efficiencies, which are strongly associated with the low light extraction efficiency caused by the strong optical polarisation of Al-rich AlGaN. Optical simulation results show that the luminous intensity of DUV-LEDs was increased by 10% owing to the synergistic effect of the sidewalls and substrates. The optical power of DUV-LEDs was increased to 16.8%, the far-field pattern was expanded to 130 degrees and the emission intensity was more focus on the central region, proving that the highly reflective sidewalls and substrates could re-direct the sideways-travelling photons for extraction. Moreover, we also investigated the reflective mechanism of Al/MgF 2 layers. Optimise refractive index distribution of Al/MgF 2 layers could change the electric field intensity to improve the reflectivity. Meanwhile, the temperature of the sample after coating were significantly reduced by 7.33%. Thermal radiation benefits and the high stability of bonding interface are the main reasons to reduce the temperature of DUVLEDs after Al/MgF 2 coating. The present strategy is proposed from the view of the chip fabrication, which is cost-effective, able to be manufactured at a large scale.

Improving AlGaN-based deep-ultraviolet light-emitting diodes: SiO2 passivation and size optimization for enhanced optoelectronic performance

240 nm AlGaN-based deep ultraviolet micro-LEDs: size effect versus edge effect

Improving Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Combining Thinning P-Algan/p-gan Layer with Ni/Au/Al High-Reflectivity Electrodes

Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft

Enhanced external quantum efficiencies of AlGaN-based deep-UV LEDs using reflective passivation layer

Efficiency boosting of 236 nm AlGaN-based micro-LEDs

Effect of the self-aligned etching thin p-GaN layer on the performance of AlGaN-based DUV LEDs with various chip sizes

Improved light extraction efficiency of AlGaN DUV light emitting diodes using Al/MgF 2 -based highly reflective film

Improving Performance of Algan‐Based Deep‐Ultraviolet Light‐Emitting Diodes by Inserting a Higher Al‐Content Algan Layer Within the Multiple Quantum Wells

Improving AlGaInP Micro-LEDs Characteristics via Varied Dielectric Passivation Layers

Advantages of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes with an Al-composition Graded Quantum Barrier.

Thermal behavior of AlGaN-based deep-UV LEDs

AlGaN-based Deep Ultraviolet Micro-Led Emitting at 275 Nm.

Significant improvement of n-contact performance and wall plug efficiency of AlGaN-based deep ultraviolet light-emitting diodes by atomic layer etching

The impacts of SiO 2 atomic-layer-deposited passivation layer thickness on GaN-based green micro-LEDs

Performance Improvement of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes Via Si-doping Design of Quantum Barriers

Performance Enhancement of AlGaN-based Deep Ultraviolet Light-emitting Diodes with AlxGa1-xN Linear Descending Layers

Improving the Performance of Free-pGaN Deep-Ultraviolet Light-Emitting Diodes by Embedding Self-Assembled Ni Nanoparticles Between p-AlGaN/p-Electrode

Improved electro-optical and photoelectric performance of GaN-based micro-LEDs with an atomic layer deposited AlN passivation layer.

Implementation of electron restriction layer in n-AlGaN toward balanced carrier distribution in deep ultraviolet light-emitting-diodes

Colloidal etching of deep ultraviolet LED with improved light extraction efficiency