[Purification methods in chronic renal failure].

P. Vereerstraeten

1968-08-01

Abstract:

What problem does this paper attempt to address?

High Thermoelectric Performance of a Sc2Si2Te6 Monolayer at Medium Temperatures: an Ab Initio Study.

Wenwu Shi,Nina Ge,Sheng Yu,Jiajing Wu,Tao Hu,Jun Wei,Xiao Yan,Xinzhong Wang,Zhiguo Wang

DOI: https://doi.org/10.1039/d2cp04410b

IF: 3.3

2022-01-01

Physical Chemistry Chemical Physics

Abstract:Thermoelectric (TE) materials have attracted great attention in solving the problems in the waste heat field, while low figure of merit and poor material stability drastically limit their practical applications. In this work, a two-dimensional (2D) Sc2Si2Te6 monolayer was systematically explored as a promising TE material via ab initio methods. The results reveal that the Sc2Si2Te6 monolayer possesses an indirect band gap with a rhombohedral crystal phase and exhibits excellent dynamic stability. The lower electronic/lattice thermal conductivity and higher electron carrier mobility result in good n-type power factor parameters between 6.24 × 1010 and 1.5 × 1011 W m-1 s-1 K-2 from 300 to 700 K. Such combined merits of low thermal conductivity and high power factor parameters endow the Sc2Si2Te6 monolayer with superior thermoelectric properties with figure of merit (ZT) values of 1.41 and 3.81 at 300 K and 700 K, respectively. This study presented here can shed light on the future design of various 2D materials for thermoelectric applications.
Single-material MoS$_{2}$ thermoelectric junction enabled by substrate engineering

Mohammadali Razeghi,Jean Spiece,Oğuzhan Oğuz,Doruk Pehlivanoğlu,Yubin Huang,Ali Sheraz,Phillip S. Dobson,Jonathan M. R. Weaver,Pascal Gehring,T. Serkan Kasırga

DOI: https://doi.org/10.48550/arXiv.2301.00974

2023-01-03

Abstract:To realize a thermoelectric power generator, typically a junction between two materials with different Seebeck coefficient needs to be fabricated. Such difference in Seebeck coefficients can be induced by doping, which renders difficult when working with two-dimensional (2d) materials. Here, we employ substrate effects to form a thermoelectric junction in ultra-thin few-layer MoS2 films. We investigated the junctions with a combination of scanning photocurrent microscopy and scanning thermal microscopy. This allows us to reveal that thermoelectric junctions form across the substrate-engineered parts. We attribute this to a gating effect induced by interfacial charges in combination with alterations in the electron-phonon scattering mechanisms. This work demonstrates that substrate engineering is a promising strategy to develop future compact thin-film thermoelectric power generators.

Materials Science
High-Performance MoS 2 /SWCNT Composite Films for a Flexible Thermoelectric Power Generator

Duo Jiang,Yi Li,Zan Li,Zhaohua Yang,Zhixiang Xia,Ping Fu,Yunfei Zhang,Feipeng Du

DOI: https://doi.org/10.1021/acsami.3c04596

IF: 9.5

2023-06-15

ACS Applied Materials & Interfaces

Abstract:Single-walled carbon nanotube (SWCNT)-based thermoelectric materials have been extensively studied in the field of flexible wearable devices due to their high flexibility and excellent electrical conductivity (σ). However, poor Seebeck coefficient (S) and high thermal conductivity limit their thermoelectric application. In this work, free-standing MoS(2)/SWCNT composite films with improved thermoelectric performance were fabricated by doping SWCNTs with MoS(2) nanosheets. The results...

materials science, multidisciplinary,nanoscience & nanotechnology
Development of MEMS Process Compatible (Bi,Sb)2(Se,Te)3-Based Thin Films for Scalable Fabrication of Planar Micro-Thermoelectric Generators

Prithu Bhatnagar,Daryoosh Vashaee

DOI: https://doi.org/10.3390/mi13091459

2022-09-02

Abstract:Bismuth telluride-based thin films have been investigated as the active material in flexible and micro thermoelectric generators (TEGs) for near room-temperature energy harvesting applications. The latter is a class of compact printed circuit board compatible devices conceptualized for operation at low-temperature gradients to generate power for wireless sensor nodes (WSNs), the fundamental units of the Internet-of-Things (IoT). CMOS and MEMS compatible micro-TEGs require thin films that can be integrated into the fabrication flow without compromising their thermoelectric properties. We present results on the thermoelectric properties of (Bi,Sb)2(Se,Te)3 thin films deposited via thermal evaporation of ternary compound pellets on four-inch SiO2 substrates at room temperature. Thin-film compositions and post-deposition annealing parameters are optimized to achieve power factors of 2.75 mW m-1 K-2 and 0.59 mW m-1 K-2 for p-type and n-type thin films. The measurement setup is optimized to characterize the thin-film properties accurately. Thin-film adhesion is further tested and optimized on several substrates. Successful lift-off of p-type and n-type thin films is completed on the same wafer to create thermocouple patterns as per the target device design proving compatibility with the standard MEMS fabrication process.
Orientation optimization for high performance Mg3Sb2thermoelectric films via thermal evaporation

Yiming Zhang,Bo Li,Zhijia Han,Tao Feng,Zhenghao Liu,Xinzhi Wu,Qianjin Wang,Kang Zhu,Pengfei Hou,Weishu Liu

DOI: https://doi.org/10.1088/1361-6528/ad6e89

IF: 3.5

2024-08-23

Nanotechnology

Abstract:Low-cost, highly efficient thermoelectric thin-film materials are becoming increasingly popular as miniaturization progresses. Mg3Sb2has great potential due to its low cost and high performance. However, the fabrication of Mg3Sb2thin films with high power factors (PFs) poses a certain challenge. In this work, we propose a general approach to prepare Mg3Sb2thin films with excellent thermoelectric properties. Using a two-step thermal evaporation and rapid annealing process, (001)-oriented Mg3Sb2thin films are fabricated onc-plane-oriented Al2O3substrates. The structure of the film orientation is optimized by controlling the film thickness, which modulates the thermoelectric performance. The PF of the Mg3Sb2at 500 nm (14μW·m-1·K-2) would increase to 169μW·m-1·K-2with Ag doping (Mg3Ag0.02Sb2) at room temperature. This work provides a new strategy for the development of high-performance thermoelectric thin films at room temperature.
Efficient Zn-based pn-junction thermoelectric device for energy harvesting

L. Banupriya,R. N. Emerson,G. Josemin Bala

DOI: https://doi.org/10.1007/s10854-024-12014-8

2024-02-01

Journal of Materials Science Materials in Electronics

Abstract:This paper proposes a novel pn-junction thermoelectric device to improve the conversion of thermoelectric energy. The device was created by depositing films of p-type Zn-doped CuI and n-type Al-doped ZnO onto an ITO glass substrate using electrodeposition technique. The resulting films had a smooth surface with nano-sized grains. They also exhibited strong adhesion at − 1.2 V compared to Ag/AgCl when 5 mol% of zinc acetate dehydrate was used. The UV-visible graphs revealed that both films had an average band gap of 3 eV. X-ray graphs showed that the thin films were highly crystalline, with orientations symmetrically arranged in the (1 0 2) and (2 2 0) planes. AFM images showed that both films have highly crystalline surface and their surface roughness favours strong adhesion. These high conductive films exhibited thermoelectric energy, which was calculated using the Seebeck effect. The hot probe method showed that the p-type Zn-CuI and n-type AZO thin films were dense and exhibited a thermoelectric figure of merit (ZT) of 0.40 and 0.50 up to the temperature of 120 °C. The thermal conductivity of the p-type and n-type materials was determined to be 2.23 W m −1 K −1 and 12.65 W m −1 K −1 , respectively. The power factor of the p and n films was found to be 202.74 μW m −1 K −2 and 525.51 μW m −1 K −2 , respectively. This was followed by the fabrication of a Zn-based thermoelectric device using a single pair of p-type Zn-CuI and n-type AZO thin-film legs. The fabricated thermoelectric device generated a maximum power of 117 pW. This Zn-based thermoelectric device is highly effective for waste heat recovery and can efficiently accumulate useful electricity over time, thereby prolonging battery life.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Large Thermoelectricity via Variable Range Hopping in Chemical Vapor Deposition Grown Single-layer MoS2

Jing Wu,Hennrik Schmidt,Amara Kiran Kumar,Xiangfan Xu,Goki Eda,Barbaros Özyilmaz

DOI: https://doi.org/10.1021/nl500666m

2014-07-09

Abstract:Ultrathin layers of semiconducting molybdenum disulfide (MoS2) offer significant prospects in future electronic and optoelectronic applications. Although an increasing number of experiments bring light into the electronic transport properties of these crystals, their thermoelectric properties are much less known. In particular, thermoelectricity in chemical vapor deposition grown MoS2, which is more practical for wafer-scale applications, still remains unexplored. Here, for the first time, we investigate these properties in grown single layer MoS2. Micro-fabricated heaters and thermometers are used to measure both electrical conductivity and thermopower. Large values of up to ~30 mV/K at room temperature are observed, which are much larger than those observed in other two dimensional crystals and bulk MoS2. The thermopower is strongly dependent on temperature and applied gate voltage with a large enhancement at the vicinity of the conduction band edge. We also show that the Seebeck coefficient follows S~T^1/3 suggesting a two-dimensional variable range hopping mechanism in the system, which is consistent with electrical transport measurements. Our results help to understand the physics behind the electrical and thermal transports in MoS2 and the high thermopower value is of interest to future thermoelectronic research and application.

Mesoscale and Nanoscale Physics
High Thermoelectric Power Factor in Two-Dimensional Crystals Ofmos2

Kedar Hippalgaonkar,Ying Wang,Yu Ye,Diana Y. Qiu,Hanyu Zhu,Yuan Wang,Joel Moore,Steven G. Louie,Xiang Zhang

DOI: https://doi.org/10.1103/physrevb.95.115407

2017-01-01

Abstract:The quest for high-efficiency heat-to-electricity conversion has been one of the major driving forces toward renewable energy production for the future. Efficient thermoelectric devices require high voltage generation from a temperature gradient and a large electrical conductivity while maintaining a low thermal conductivity. For a given thermal conductivity and temperature, the thermoelectric power factor is determined by the electronic structure of the material. Low dimensionality (1D and 2D) opens new routes to a high power factor due to the unique density of states (DOS) of confined electrons and holes. The 2D transition metal dichalcogenide (TMDC) semiconductors represent a new class of thermoelectric materials not only due to such confinement effects but especially due to their large effective masses and valley degeneracies. Here, we report a power factor of MoS2 as large as 8.5 mW m(-1) K-2 at room temperature, which is among the highest measured in traditional, gapped thermoelectric materials. To obtain these high power factors, we perform thermoelectric measurements on few-layer MoS2 in the metallic regime, which allows us to access the 2D DOS near the conduction band edge and exploit the effect of 2D confinement on electron scattering rates, resulting in a large Seebeck coefficient. The demonstrated high, electronically modulated power factor in 2D TMDCs holds promise for efficient thermoelectric energy conversion.
High Thermoelectric Powerfactor in 2D Crystals of MoS 2

K. Hippalgaonkar,Ying Wang,Yu Ye,D. Qiu,Hanyu Zhu,Yuan-yuan Wang,J. Moore,S. Louie,Xiang Zhang

2017-01-01

Abstract:The quest for high-efficiency heat-to-electricity conversion has been one of the major driving forces towards renewable energy production for the future. Efficient thermoelectric devices require high voltage generation from a temperature gradient and a large electrical conductivity, while maintaining a low thermal conductivity. For a given thermal conductivity and temperature, the thermoelectric powerfactor is determined by the electronic structure of the material . Low dimensionality (1D and 2D) opens new routes to high powerfactor due to the unique density of states (DOS) of confined electrons and holes. 2D transition metal dichalcogenide (TMDC) semiconductors represent a new class of thermoelectric materials not only due to such confinement effects, but especially due to their large effective masses and valley degeneracies. Here we report a powerfactor of MoS 2 as large as 8.5 mWm −1 K −2 at room temperature, which is amongst the highest measured in traditional, gapped thermoelectric materials. To obtain these high powerfactors, we perform thermoelectric measurements on few-layer MoS 2 in the metallic regime, which allows us to access the 2D DOS near the conduction band edge and exploit the effect of 2D confinement on electron scattering rates, which result in a large Seebeck coefficient. The demonstrated high, electronically modulated powerfactor in 2D TMDCs holds promise for efficient thermoelectric energy conversion.
Orientation Optimization for High Performance Mg3sb2 Thermoelectric Films Via Thermal Evaporation

Yiming Zhang,Bo Li,Zhijia Han,Tao Feng,Zhenghao Liu,Xinzhi Wu,Qianjin Wang,Kang Zhu,Pengfei Hou,Weishu Liu

DOI: https://doi.org/10.1088/1361-6528/ad6e89

IF: 3.5

2024-01-01

Nanotechnology

Abstract:Low-cost, highly efficient thermoelectric thin-film materials are becoming increasingly popular as miniaturization progresses. Mg3Sb2 has great potential due to its low cost and high performance. However, the fabrication of Mg3Sb2 thin films with high power factors (PFs) poses a certain challenge. In this work, we propose a general approach to prepare Mg3Sb2 thin films with excellent thermoelectric properties. Using a two-step thermal evaporation and rapid annealing process, (001)-oriented Mg3Sb2 thin films are fabricated on c-plane-oriented Al2O3 substrates. The structure of the film orientation is optimized by controlling the film thickness, which modulates the thermoelectric performance. The PF of the Mg3Sb2 at 500 nm (14 mu Wm(-1)K-2) would increase to 169 mu Wm(-1)K-2 with Ag doping (Mg3Ag0.02Sb2) at room temperature. This work provides a new strategy for the development of high-performance thermoelectric thin films at room temperature.
High Thermoelectric Powerfactor in Single and Few-Layer MoS$_2$

Kedar Hippalgaonkar,Ying Wang,Yu Ye,Diana Qiu,Hanyu Zhu,Yuan Wang,Joel Moore,Steven Louie,Xiang Zhang

DOI: https://doi.org/10.1103/PhysRevB.95.115407

2016-12-31

Abstract:The quest for high-efficiency heat-to-electricity conversion has been one of the major driving forces towards renewable energy production for the future. Efficient thermoelectric devices require high voltage generation from a temperature gradient and a large electrical conductivity, while maintaining a low thermal conductivity. For a given thermal conductivity and temperature, the thermoelectric powerfactor is determined by the electronic structure of the material. Low dimensionality (1D and 2D) opens new routes to high powerfactor due to the unique density of states (DOS) of confined electrons and holes. 2D transition metal dichalcogenide (TMDC) semiconductors represent a new class of thermoelectric materials not only due to such confinement effects, but especially due to their large effective masses and valley degeneracies. Here we report a powerfactor of $MoS_2$ as large as $8.5 mWm^{-1}K^{-2}$ at room temperature, which is amongst the highest measured in traditional, gapped thermoelectric materials. To obtain these high powerfactors, we perform thermoelectric measurements on few-layer $MoS_2$ in the metallic regime, which allows us to access the 2D DOS near the conduction band edge and exploit the effect of 2D confinement on electron scattering rates, which result in a large Seebeck coefficient. The demonstrated high, electronically modulated powerfactor in 2D TMDCs holds promise for efficient thermoelectric energy conversion.

Materials Science,Mesoscale and Nanoscale Physics
High Thermoelectric Powerfactor in Single and Few-Layer MoS_2

Kedar Hippalgaonkar,Ying Wang,Yu Ye,Diana Qiu,Hanyu Zhu,Yuan Wang,Joel Moore,Steven Louie,Xiang Zhang

DOI: https://doi.org/10.1103/physrevb.95.115407

2015-01-01

Abstract:The quest for high-efficiency heat-to-electricity conversion has been one of the major driving forces towards renewable energy production for the future. Efficient thermoelectric devices require high voltage generation from a temperature gradient and a large electrical conductivity, while maintaining a low thermal conductivity. For a given thermal conductivity and temperature, the thermoelectric powerfactor is determined by the electronic structure of the material. Low dimensionality (1D and 2D) opens new routes to high powerfactor due to the unique density of states (DOS) of confined electrons and holes. 2D transition metal dichalcogenide (TMDC) semiconductors represent a new class of thermoelectric materials not only due to such confinement effects, but especially due to their large effective masses and valley degeneracies. Here we report a powerfactor of MoS_2 as large as 8.5 mWm^-1K^-2 at room temperature, which is amongst the highest measured in traditional, gapped thermoelectric materials. To obtain these high powerfactors, we perform thermoelectric measurements on few-layer MoS_2 in the metallic regime, which allows us to access the 2D DOS near the conduction band edge and exploit the effect of 2D confinement on electron scattering rates, which result in a large Seebeck coefficient. The demonstrated high, electronically modulated powerfactor in 2D TMDCs holds promise for efficient thermoelectric energy conversion.
Tuning the thermoelectric properties of ZnO/MoS2/carbon fabric via interface-induced energy filtering effect for wearable thermoelectric application

C. Suresh Prasanna,S. Harish,Senthil Kumar Eswaran,H. Ikeda,M. Navaneethan

DOI: https://doi.org/10.1007/s10854-024-12680-8

2024-05-30

Journal of Materials Science Materials in Electronics

Abstract:Wearable thermoelectric generators, capable of converting human body heat into electricity are one of the most suitable forms of power source to fabricate self-powered wearable electronic devices. Molybdenum disulfide (MoS 2 ), owing to its large intrinsic bandgap and high carrier mobility is one of the most widely explored materials for thermoelectric application. In this work, 2D MoS 2 nanosheets were grown on the conductive carbon fabric (CF) by a binder-free in situ hydrothermal method and the 3D ZnO nanoparticles were decorated on them via a facile dip coating technique, to form a 3D/2D interface. Apart from providing a flexible substrate to the material, the CF aids the MoS 2 with higher carrier concentration and mobility. Thus, the pristine MoS 2 possesses the highest electrical conductivity ( σ ) of all the samples at 373 K. The 20-mg ZnO-decorated sample achieved a maximum Seebeck coefficient ( S ) of 11.7 μV/K at 373 K, which is 1.25 times higher than that of pristine MoS 2 /CF. This enhancement in S is ascribed to the higher energy filtering effect at the ZnO/MoS 2 interface that allows the flow of only high-energy carriers. The 15-mg ZnO-decorated sample with optimum S and σ had the highest power factor (PF) of 311 nW/mK 2 at 373 K which is 1.2 times higher than that of the pristine sample. This enhancement in PF is mainly due to the synergistic effect of large σ and an extremely low activation energy of 0.00802 eV. Thus, the optimum concentration of ZnO nanoparticles for an enhanced PF is 15 mg owing to its very low activation energy.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
CoSb 3 -Based Thin-Film Thermoelectric Devices with High Performance Via Electrode Optimization

Dongwei Ao,Fu Li,Yuexing Chen,Jingting Luo,Guangxing Liang,Zhuanghao Zheng,Xiang-Hua Zhang,Ping Fan

DOI: https://doi.org/10.1021/acsaem.1c00795

IF: 6.4

2021-04-27

ACS Applied Energy Materials

Abstract:Flexible thin-film thermoelectric devices have been extensively studied for powering wearable electronics, particularly as a power source for self-powered sensors or temperature detection. Skutterudite CoSb3 is emerging as one of the most studied candidate materials for thermoelectric applications. This work is focused on comprehensive optimization in terms of CoSb3-based thin films as well as electrode materials and structures with the objective to fabricate high-performance flexible devices. CoSb3-based thin films with nanoparticles for the enhancement of phonon scattering have been fabricated using the vacuum sputtering method. N-type and P-type thin films can be obtained by appropriate doping with Ti and In, respectively. It has been demonstrated that a multilayer structure of electrodes can greatly enhance the thermoelectric performance of thermoelectric devices by increasing the output power and the thermal stability of the device in the air atmosphere. It has also been demonstrated the possibility of obtaining a relatively high output voltage of above 90 mV and a high-power density of 0.46 mW/cm2 at a current intensity of about 0.35 mA with the device. Therefore, many applications can be considered. The thin-film thermoelectric device has also been tested as a thermal sensor, and it exhibits fast responsivity, with a reaction time of a few hundreds of milliseconds, as well as high stability.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaem.1c00795?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaem.1c00795</a>.Detailed experimental section, device measurements, XRD analysis, and SEM morphology (<a class="ext-link" href="/doi/suppl/10.1021/acsaem.1c00795/suppl_file/ae1c00795_si_001.pdf">PDF</a>).This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Use of distal Thiersch-Duplay urethroplasty for proximal hypospadias repairs in conjunction with short island pedicle flap.

M. Zaontz,W. Kaplan,E. Ritchie

DOI: https://doi.org/10.1016/S0090-4295(90)80288-X

IF: 2.633

1990-11-01

Urology

Abstract:
Silica-modified few-layered MoS 2 for SWCNT-based thermoelectric materials

Duo Jiang,Zan Li,Yi Li,Chi Wang,Yannan Wang,Ping Fu,Yunfei Zhang,Feipeng Du

DOI: https://doi.org/10.1016/j.cej.2024.149439

IF: 15.1

2024-02-11

Chemical Engineering Journal

Abstract:The design and construction of carbon nanotubes (CNT)-based thermoelectric materials are benefit for developing self-powered wearable devices. Molybdenum disulfide (MoS 2 ) with few layers has been pursued to enhance the thermoelectric properties of CNT due to its high carrier mobility and energy filtering effect. In this work, sulfhydryl silica nanoparticles were firstly synthesized as a concomitant sulfur source, and the SiO 2 @MoS 2 with few layers was prepared by hydrothermal method. By light doping SiO 2 @MoS 2 with few layers, the carrier mobility of the SiO 2 @MoS 2 /SWCNT is further improved due to the enhanced interfacial interaction between MoS 2 and SWCNTs, and the Seebeck coefficient was improved obviously without significant decrease in electrical conductivity, thus improving the power factor ( PF ) of the SWCNTs. Here, the maximum Seebeck coefficient, electrical conductivity, and PF values for SiO 2 @MoS 2 /SWCNT obtained at room temperature were 39.2 ± 0.2 μV K −1 , 1646.4 ± 117.2 S cm −1 and 253.2 ± 21.1 μW m −1 K −2 , respectively. In addition, the PF was further enhanced to 303.3 μW m −1 K −2 at 435 K. Moreover, a thermoelectric device was assembled by connecting SiO 2 @MoS 2 /SWCNT films and copper sheets in series, which exhibited an open circuit voltage of 11.2 mV and an output power of 1.1 μW under a temperature gradient of 50 K. Therefore, this work opens a novel avenue for fabricating CNT-based thermoelectric materials with high performance, which has potential application in converting heat energy into electrical power at middle-low temperature.

engineering, chemical, environmental
Improved performance in Mg3Sb2/Sb hybrid films for thermoelectric generation

Qi Zou,Hongjing Shang,Lin Zhang,Changping Feng,Hongwei Gu,Fazhu Ding

DOI: https://doi.org/10.1016/j.apsusc.2023.158100

IF: 6.7

2023-11-01

Applied Surface Science

Abstract:Mg3Sb2-based bulk materials show great potential in both waste-heat recovery and cooling applications because of their excellent thermoelectric performance. But for the Mg3Sb2-based thermoelectric films, few efforts are devoted to it. Here, the p-type Mg3Sb2-based thermoelectric films have been successfully fabricated using the radio frequency magnetic sputtering method, which are composed of Mg3Sb2 and Sb phases. Interestingly, the ratio of Mg3Sb2 and Sb phases can be regulated by adjusting deposition temperature, where thermoelectric performance can be optimized, obtaining high power factor of 43.21 μV m−1 K−2 at 195 ℃. Furthermore, both Seebeck coefficient and electrical conductivity of Mg3Sb2 films are rarely decreased even after one month of exposure to air, demonstrating good stability. In order to further evaluate practicability, the output powers of Mg3Sb2/Sb films are measured at different temperature differences (ΔT), where an output voltage of ∼0.9 mV is achieved at ΔT of 31 ℃. In particular, the output power is basically consistent in the periodic cycle measurement, further implying a good stability. This work can provide a new thinking, enlightening more researchers to focus on the Mg3Sb2-based low-dimensional materials, and promoting its applications.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
High figure-of-merit of single-walled carbon nanotubes films with metallic type conduction

Suman K. Mishra,Amit Kaushal,Rajath Alexander,Soumyabrata Patra,Meetu Bharti,V. S. Rawat,K. P. Muthe,Bhanu Pratap Singh,Ajay Singh

DOI: https://doi.org/10.1063/5.0173449

IF: 4

2024-02-19

Applied Physics Letters

Abstract:Carbon nanotubes are promising candidates for thermoelectric power generation because of their one-dimensionality mediated high Seebeck coefficient, high electrical conductivity with added advantages of flexibility, light weight, and scalability. We report the temperature-dependent thermoelectric properties of single-walled carbon nanotube (SWCNTs) films. The SWCNTs films exhibit p-type metallic conduction with high Seebeck coefficient (∼69.5 μVK−1) and moderate electrical conductivity (∼76 Scm−1). The films exhibit low thermal conductivity (∼0.1 Wm−1 K−1) due to phonon scattering at the interjunction region. The synergetic combination of thermoelectric properties resulted in a high figure-of-merit of ∼0.11 at 305 K. A flexible thermoelectric generator based on SWCNTs films mounted on a curved hot surface exhibited an output of 17 mV and 54 μA under a small temperature gradient of 10 K. The present work provides possible avenues for developing wearable SWCNTs based thermoelectric power generation modules for harvesting body heat.

physics, applied
High Thermoelectric Power Factor of P-Type Amorphous Silicon Thin Films Dispersed with Ultrafine Silicon Nanocrystals

Ngan Hoang Pham,Orjan Vallin,J. Panda,M. Venkata Kamalakar,Junji Guo,Jun Luo,Chenyu Wen,Shi-Li Zhang,Zhi-Bin Zhang

DOI: https://doi.org/10.1063/5.0004318

IF: 2.877

2020-01-01

Journal of Applied Physics

Abstract:Silicon, a candidate as an abundant-element thermoelectric material for low-temperature thermal energy scavenging applications, generally suffers from rather low thermoelectric efficiency. One viable solution to enhancing the efficiency is to boost the power factor (PF) of amorphous silicon (a-Si) while keeping the thermal conductivity sufficiently low. In this work, we report that PF >1 m Wm−1 K−2 is achievable for boron-implanted p-type a-Si films dispersed with ultrafine crystals realized by annealing with temperatures ≤600 °C. Annealing at 550 °C initiates crystallization with sub-5-nm nanocrystals embedded in the a-Si matrix. The resultant thin films remain highly resistive and thus yield a low PF. Annealing at 600 °C approximately doubles the density of the sub-5-nm nanocrystals with a bimodal size distribution characteristic and accordingly reduces the fraction of the amorphous phase in the films. Consequently, a dramatically enhanced electrical conductivity up to 104 S/m and hence PF > 1 m Wm−1 K−2 measured at room temperature are achieved. The results show the great potential of silicon in large-scale thermoelectric applications and establish a route toward high-performance energy harvesting and cooling based on silicon thermoelectrics.
Boosted Thermoelectric Properties of Molybdenum Oxide Thin Films Deposited on Si Substrates

Jiahua Zhang,Weijia Song,Xue Ge,Zhi Luo,Song Yue

DOI: https://doi.org/10.1142/s0217984919500167

2019-01-01

Modern Physics Letters B

Abstract:[Formula: see text] has novel peculiarities and complexities due to multiple valence states of 4d molybdenum, but high carrier density impedes its thermoelectric (TE) application. Recent investigation has demonstrated that the TE performance of transition metal oxide films can be greatly enhanced by activating a parallel conduction channel in the perovskite substrates through reversible incorporation of oxygen. In this work, we report the TE properties of [Formula: see text] thin films deposited on single crystalline Si and quartz glass substrates by magnetron sputtering. The TE power factor (PF) in the former is above 40 times bigger than that in the latter. Such a large enhancement originates mainly from the significantly enhanced Seebeck coefficient, correlated with the contribution of the Si substrate. The highest PF value 1.78 mW/(m[Formula: see text]⋅[Formula: see text]K2) at 700 K in this [Formula: see text]/Si system is comparable to the state-of-the-art in other TE thin films. Based on the preceding research, our experimental results suggest a more economic and scalable route to explore high-performance TE thin films.

[Purification methods in chronic renal failure].

High Thermoelectric Performance of a Sc2Si2Te6 Monolayer at Medium Temperatures: an Ab Initio Study.

Single-material MoS$_{2}$ thermoelectric junction enabled by substrate engineering

High-Performance MoS 2 /SWCNT Composite Films for a Flexible Thermoelectric Power Generator

Development of MEMS Process Compatible (Bi,Sb)2(Se,Te)3-Based Thin Films for Scalable Fabrication of Planar Micro-Thermoelectric Generators

Orientation optimization for high performance Mg3Sb2thermoelectric films via thermal evaporation

Efficient Zn-based pn-junction thermoelectric device for energy harvesting

Large Thermoelectricity via Variable Range Hopping in Chemical Vapor Deposition Grown Single-layer MoS2

High Thermoelectric Power Factor in Two-Dimensional Crystals Ofmos2

High Thermoelectric Powerfactor in 2D Crystals of MoS 2

Orientation Optimization for High Performance Mg3sb2 Thermoelectric Films Via Thermal Evaporation

High Thermoelectric Powerfactor in Single and Few-Layer MoS$_2$

High Thermoelectric Powerfactor in Single and Few-Layer MoS_2

Tuning the thermoelectric properties of ZnO/MoS2/carbon fabric via interface-induced energy filtering effect for wearable thermoelectric application

CoSb 3 -Based Thin-Film Thermoelectric Devices with High Performance Via Electrode Optimization

Use of distal Thiersch-Duplay urethroplasty for proximal hypospadias repairs in conjunction with short island pedicle flap.

Silica-modified few-layered MoS 2 for SWCNT-based thermoelectric materials

Improved performance in Mg3Sb2/Sb hybrid films for thermoelectric generation

High figure-of-merit of single-walled carbon nanotubes films with metallic type conduction

High Thermoelectric Power Factor of P-Type Amorphous Silicon Thin Films Dispersed with Ultrafine Silicon Nanocrystals

Boosted Thermoelectric Properties of Molybdenum Oxide Thin Films Deposited on Si Substrates