Abstract:MoS2 monolayers exhibit excellent light absorption and large thermoelectric power, which are, however, accompanied with very strong exciton binding energy - resulting in complex photoresponse characteristics. We study the electrical response to scanning photo-excitation on MoS2 monolayer (1L) and bilayer (2L) devices, and also on monolayer/bilayer (1L/2L) planar heterojunction and monolayer/few-layer/multi-layer (1L/FL/ML) planar double heterojunction devices to unveil the intrinsic mechanisms responsible for photocurrent generation in these materials and junctions. Strong photoresponse modulation is obtained by scanning the position of the laser spot, as a consequence of controlling the relative dominance of a number of layer dependent properties, including (i) photoelectric effect (PE), (ii) photothermoelectric effect (PTE), (iii) excitonic effect, (iv) hot photo-electron injection from metal, and (v) carrier recombination. The monolayer and bilayer devices show peak photoresponse when the laser is focused at the source junction, while the peak position shifts to the monolayer/multi-layer junction in the heterostructure devices. The photoresponse is found to be dependent on the incoming light polarization when the source junction is illuminated, although the polarization sensitivity drastically reduces at the monolayer/multi-layer heterojunction. Finally, we investigate laser position dependent transient response of photocurrent to reveal trapping of carriers in SiO2 at the source junction is the critical factor to determine the transient response in 2D photodetectors, and also show that, by systematic device design, such trapping can be avoided in the heterojunction devices, resulting in fast transient response. The insights obtained will play an important role in designing fast 2D TMDs based photodetector and related optoelectronic and thermoelectric devices.

Photogalvanic Effect in Nitrogen-Doped Monolayer MoS2 from First Principles

Photothermoelectric and Photovoltaic Effects Both Present in Mos2

Pressure confinement effect in MoS2 monolayers.

Mechanisms of photoconductivity in atomically thin MoS2

Tuning Electronic and Optical Properties of Monolayer MoS2 by Transition Metal and Nitrogen Co-Doping

Piezo-photovoltaic Effect in Monolayer 2H-MoS2

Tunable Structural, Electronic, and Optical Properties of Layered Two-Dimensional C2n and Mos2 Van Der Waals Heterostructure As Photovoltaic Material

Photoresponse of atomically thin MoS2 layers and their planar heterojunctions

Emerging Photoluminescence in Monolayer MoS 2

Photogalvanic effect induced charge and spin photocurrent in group-V monolayer systems

Photodiode-Like Behavior and Excellent Photoresponse of Vertical Si/Monolayer MoS2 Heterostructures

Photoinduced valley-polarized current of layered MoS2 by electric tuning

Emerging photoluminescence in monolayer MoS2.

(Invited) Photoelectrochemistry of Monolayer 2D Semiconductors: Quantifying Band Gap Renormalization Effects and Hot Carrier Extraction

First-Principles Study of Hybrid Graphene and MoS$_2$ Nanocomposites

Photo-Induced Bandgap Renormalization Governs the Ultrafast Response of Single-Layer MoS2

Optically discriminating carrier-induced quasiparticle band gap and exciton energy renormalization in monolayer MoS2

Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors

Room-Temperature Geometrical Circular Photocurrent in Few-Layer MoS 2

Probing quantum confinement effects on the excitonic property and electronic band structures of MoS<sub>2</sub>

First-principles Analysis of Photo-current in Graphene PN Junctions