Abstract:Although the research history of triboelectrification has been more than 2000 years, there are still many problems to be solved so far. The use of scanning probe microscopy provides an important way to quantitatively study the transfer, accumulation, and dissipation of triboelectric charges in the process of triboelectrification. Two-dimensional materials are considered to be key materials for new electronic devices in the post-Moore era due to their atomic-scale size advantages. If the electrostatic field generated by triboelectrification can be used to replace the traditional gate electrostatic field, it is expected to simplify the structure of two-dimensional electronic devices and reconfigure them at any time according to actual needs. Here, we investigate the triboelectrification process of various two-dimensional materials such as MoS2, WSe2, and ZnO. Different from traditional bulk materials, after two-dimensional materials are rubbed, the triboelectric charges generated may tunnel through the two-dimensional materials to the underlying substrate surface. Because the tunneling triboelectric charge is protected by the two-dimensional material, its stable residence time on the substrate surface can reach more than 7 days, which is more than tens of minutes for the traditional triboelectric charge. In addition, the electrostatic field generated by the tunneling triboelectric charge can effectively regulate the carrier transport performance of two-dimensional materials, and the source–drain current of the field effect device regulated by the triboelectric floating gate is increased by nearly 60 times. The triboelectric charge tunneling phenomenon in two-dimensional materials is expected to be applied in the fields of new two-dimensional electronic devices and reconfigurable functional circuits.

Contact Electrification by Quantum-Mechanical Tunneling

Valuations of Charging Efficiency and Critical Gap for Electron Tunnelling under Contact Electrification Model

A Two Dimensional Tunneling Resistance Transmission Line Model for Nanoscale Parallel Electrical Contacts

A Quantitative Model of Triboelectric Charge Transfer

Electronic heat tunneling between two metals beyond the WKB approximation

The electron transfer dynamics in the contact electrification and its effects on the intensity of triboluminescence

Interacting electrodynamics of short coherent conductors in quantum circuits

Electronic conductance via atomic wires: a phase field matching theory approach

A Three-Dimensional Model of Single-Electron Tunneling Between A Conductive Probe and A Localized Electronic State in A Dielectric

Resonant Tunneling and Charging Effects, a Path Integral Approach

Quantum Electron Transport in Ohmic Edge Contacts between Two-Dimensional Materials

Charge Transport Model in Nanodielectric Composites Based on Quantum Tunneling Mechanism and Dual-Level Traps

Quantum electron transport controlled by cavity vacuum fields

A MOS Quantum Tunneling Analytical Model Based on Theory of Density Gradient

Electron transfer in the contact-electrification between corrugated 2D materials: A first-principles study

Quantifying electron-transfer in liquid-solid contact electrification and the formation of electric double-layer

Modeling Tunneling for the Unconventional Superconducting Proximity Effect

Anti-resonance and the “0.7 Anomaly” in Conductance Through a Quantum Point Contact

Thermoelectric transport across a tunnel contact between two charge Kondo circuits: beyond perturbation theory

Electric and Magnetic Field-dependent Tunneling between Coupled Nanowires

Dynamic behavior of tunneling triboelectric charges in two-dimensional materials