Abstract:In the wide group of thermoelectric compounds, the half-Heusler ZrNiSn alloy is one of the most promising materials thanks to its thermal stability and narrow band gap, which open it to the possibility of mid-temperature applications. A large variety of defects and doping can be introduced in the ZrNiSn crystalline structure, thus allowing researchers to tune the electronic band structure and enhance the thermoelectric performance. Within this picture, theoretical studies of the electronic properties of perfect and defective ZrNiSn structures can help with the comprehension of the relation between the topology of defects and the thermoelectric features. In this work, a half-Heusler ZrNiSn alloy is studied using different defective models by means of an accurate Density Functional Theory supercell approach. In particular, we decided to model the most common defects related to Ni, which are certainly present in the experimental samples, i.e., interstitial and antisite Ni and a substitutional defect consisting of the replacement of Sn with Sb atoms using concentrations of 3% and 6%. First of all, a comprehensive characterization of the one-electron properties is performed in order to gain deeper insight into the relationship between structural, topological and electronic properties. Then, the effects of the modeled defects on the band structure are analyzed, with particular attention paid to the region between the valence and the conduction bands, where the defective models introduce in-gap states with respect to the perfect ZrNiSn crystal. Finally, the electronic transport properties of perfect and defective structures are computed using semi-classical approximation in the framework of the Boltzmann transport theory as implemented in the Crystal code. The dependence obtained of the Seebeck coefficient and the power factor on the temperature and the carrier concentration shows reasonable agreement with respect to the experimental counterpart, allowing possible rationalization of the effect of the modeled defects on the thermoelectric performance of the synthesized samples. As a general conclusion, defect-free ZrNiSn crystal appears to be the best candidate for thermoelectric applications when compared to interstitial and antisite Ni defective models, and substitutional defects of Sn with Sb atoms (using concentrations of 3% and 6%) do not appreciably improve electronic transport properties.

Compositional Tailoring for Realizing High Thermoelectric Performance in Hafnium-Free n-Type ZrNiSn Half-Heusler Alloys

Enhanced Thermoelectric Performance in Hf-Free p-Type (Ti, Zr)CoSb Half-Heusler Alloys

Engineering the Thermoelectric Transport in Half‐Heusler Materials through a Bottom‐Up Nanostructure Synthesis

Tailoring Ni/Fe Doping for Superior Thermoelectric Performance of Zr2Ni2−xFexSnSb (x = 0.30, 0.35, 0.40) High‐Entropy Alloys

High Defect Tolerance in Heavy‐Band Thermoelectrics

Half Heusler Alloys for Efficient Thermoelectric Power Conversion

Enhancement in Thermoelectric Properties of ZrNiSn-based Alloys by Ta Doping and Hf Substitution

High performance half-Heusler thermoelectric materials with refined grains and nanoscale precipitates

High Band Degeneracy Contributes to High Thermoelectric Performance in p-Type Half-Heusler Compounds

Enhancing the Thermoelectric Properties via Modulation of Defects in P‐Type MNiSn‐Based (M = Hf, Zr, Ti) Half‐Heusler Materials

Integrated First Principles and Experimental Investigation of Thermoelectric Transport in Zr/Ti Half‐Heusler‐Type High Entropy Alloys

Increased Electrical Conductivity In Fine-Grained (Zr,Hf)Nisn Based Thermoelectric Materials With Nanoscale Precipitates

Enhancement in the thermoelectric performance of ZrNiSn-based alloys through extra Zr-rich nanoprecipitates with superstructures

Enhancing Thermoelectric Performance of Tinisn Half-Heusler Compounds Via Modulation Doping

Selective Scatterings of Phonons and Electrons in Defective Half-Heusler Nb1-CoSb for the Figure of Merit Zt > 1

Crucial Role of Ni Point Defects and Sb Doping for Tailoring the Thermoelectric Properties of ZrNiSn Half-Heusler Alloy: An Ab Initio Study

TaFeSb-Based Half-Heusler Thermoelectrics with High zT > 1 through the Alloying Effect

Half-Heusler alloys as emerging high power density thermoelectric cooling materials

Double half-Heusler alloys ( = , ) with promising thermoelectric performance: The role of varying structural phases

Improving the thermoelectric performance of double half-Heusler compounds ZrNi(In,Sb)

Selective Scatterings of Phonons and Electrons in Defective Half‐Heusler Nb1−δCoSb for the Figure of Merit zT > 1