Achieving High-Temperature Multiferroism by Atomic Architecture.
Yi Cao,Yun-Long Tang,Yin-Lian Zhu,Yujia Wang,Nan Liu,Min-Jie Zou,Jiaqi Liu,Yan-Peng Feng,Wan-Rong Geng,Xiu-Liang Ma
DOI: https://doi.org/10.1021/acsami.2c20122
IF: 9.5
2023-01-01
ACS Applied Materials & Interfaces
Abstract:Materials with multiple order parameters, typically, in which ferroelectricity and magnetism are coupled, are illuminative for next-generation multifunctional electronics. However, searching for such single-phase multiferroics is challenging owing to antagonistic orbital occupancy and chemical bonding requirements for polarity and magnetism. Appropriate multiferroic candidates have been proposed, but their practical implementation is impeded by the low working temperature, weak coupling between ferroic orders, or antiparallel spin alignment in magnetic sublattices. Here, we report a family of single-phase multiferroic materials in which high-temperature magnetism and voltage-switchable ferroelectricity are coupled. Using pulsed laser deposition, we have fabricated single-crystalline thin films incorporating a uniformly percolated open-shell dn framework, which are composed of Fe cations with B-site occupancy and exhibit long-range spin ordering into the displacive ferroelectric PbTiO3 lattice, as demonstrated by atomically resolved chemical analysis. The tetragonal polar Pb(Ti1-x,Fex)O3 (PFT(x), x ≤ 0.10) family exhibits a switchable ferroelectric nature and magnetic interaction with a moderate coercive field of around 300 Oe at room temperature. Notably, the magnetic order even persists above 500 K, which is higher than already reported potential multiferroic candidates until now. Our strategy of merging a spin-ordered sublattice into inherent ferroelectrics via atomic occupancy engineering provides an available pathway for highly thermally stable multiferroic and spintronic applications.