Ultrafast Phase Transition of Si by Femtosecond Laser Pulse Irradiation

M. Fujita,Y. Izawa,S. Tokita,Y. Izawa,C. Yamanaka

DOI: https://doi.org/10.1117/12.739427

2006-09-22

Abstract:Phase transition (amorphization and crystallization) of Si by ultrashort pulse laser irradiation is reported in this paper. We investigated the dependences of ablation rate and fluence for amorphization on laser pulse width.

What problem does this paper attempt to address?

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Yong Gan,J. K. Chen

DOI: https://doi.org/10.1007/s00339-011-6573-z

2011-01-01

Applied Physics A

Abstract:Ultrafast thermomechanical responses of silicon thin films due to ultrashort-pulsed laser irradiation were investigated using an atomic-level hybrid method coupling the molecular dynamics and the ultrafast two-step energy transport model. The dynamic reflectivity and absorption were considered, and the effects of laser fluence and pulse duration on the thermomechanical response were studied. It was found that both the carrier temperature and number density rapidly increase to their maximum while the lattice temperature rises at a much slower rate. The ultrafast laser heating could induce a strong stress wave in the film, with the maximum compressive and tensile stress occurring near the front and back surfaces, respectively. For laser pulses of the same duration, the higher the laser fluence is, the higher the carrier temperature and density and lattice temperature are induced. For the same laser fluence, a longer pulse generally produces lower carrier density and temperatures and weaker stress shock strength. However, for the fluence of 0.2 J/cm(2), the lowest lattice temperature was simulated for a 100-fs pulse compared to the 1-ps and 5-ps pulses, due to the increase of reflectivity by high carrier density. It is also shown that the optical properties as functions of lattice temperature usually employed are not suited for modeling ultrafast laser interactions with silicon materials.
Numerical Investigation of the Kinetics of Non-Equilibrium Phase Transitions in Silicon Induced by an Ultra-Short Laser Pulse

Dmitry S Ivanov,Tatiana E Itina

2024-11-15

Abstract:Modern semiconductor applications demand precise laser processing at the nanometer scale, requiring a detailed understanding of phase transitions and structural modifications. Accurate control over laser-induced processes in semiconductors is essential for generating surface structures and modifying surface properties. In this study, we present a numerical investigation of non-equilibrium laser-induced phase transitions in silicon (Si) using a hybrid atomistic-continuum model. The model combines the strengths of Molecular Dynamics (MD) simulations for atomisticscale descriptions of non-equilibrium phase transitions with a continuum approach to account for laser-generated free carriers. This framework captures the generation and diffusion of electronhole pairs, thermal diffusion, and electron-phonon coupling during laser energy deposition. We apply the model to determine the melting depth as a function of fluence for a 100 fs laser pulse at 800 nm. The results show that the stand-alone continuum approach underestimates the melting threshold compared to the hybrid atomistic-continuum model, which incorporates the detailed kinetics of melting. Additionally, we explore the effect of crystal orientation on melting dynamics. Lastly, the MD model is used to identify the conditions leading to the amorphization of the Si surface. These findings provide valuable insights into experimental observations of Si surface structuring induced by ultrashort laser pulses.

Materials Science
Effect of high-power nanosecond and femtosecond laser pulses on silicon nanostructures

G. A. Kachurin,S. G. Cherkova,V. A. Volodin,D. V. Marin,M. Deutschmann

DOI: https://doi.org/10.1134/s1063782608020103

IF: 0.66

2008-02-01

Semiconductors

Abstract:The effect of high-power nanosecond (20 ns) and femtosecond (120 fs) laser pulses on silicon nanostructures produced by ion-beam-assisted synthesis in SiO2 layers or by deposition onto glassy substrates is studied. Nanosecond annealing brings about a photoluminescence band at about 500 mn, with the intensity increasing with the energy and number of laser pulses. The source of the emission is thought to be the clusters of Si atoms segregated from the oxide. In addition, the nanosecond pulses allow crystallization of amorphous silicon nanoprecipitates in SiO2. Heavy doping promotes crystallization. The duration of femtosecond pulses is too short for excess Si to be segregated from SiO2. At the same time, such short pulses induce crystallization of Thin a-Si films on glassy substrates. The energy region in which crystallization is observed for both types of pulses allows short-term melting of the surface layer.

physics, condensed matter
One-Step femtosecond laser irradiation of Single-Crystal Silicon: Evolution of Micro-Nano structures and damage investigation

Yanan Liu,Ye Ding,Jichang Xie,Liangliang Xu,In Wha Jeong,Lijun Yang

DOI: https://doi.org/10.1016/j.matdes.2022.111443

2022-12-04

Abstract:As a pillar material of semiconductors, single-crystal silicon (Si) has attracted much attention due to its excellent electronic properties. Meanwhile, femtosecond laser processing as a convenient fabrication method for miniaturized structures provides an effective way to improve the performance of Si-based devices. However, the final-state analysis of femtosecond laser-induced Si micro-nano structures remains to be explored. In this study, the evolution of the micro-nano structures and the variation of surface and subsurface damage with pulse number were studied. Based on the atomic structure, the amorphous layer, dislocation layer, and unaffected layer were found. The amorphous layer resulted from the re-solidification of melted materials. The dislocation layer consisted of dislocations and lattice distortion. The unaffected layer retained the initial lattice structure and was not affected by laser irradiation. The high temperature and stress induced by multiple pulses led to the stacking faults and nano-twins in the subsurface layer. The evolution of the Si structure was essentially a transition process from a dislocation layer to a high-density defect layer and a transition process from nanotips to laser-induced periodic surface structures. During this process, dislocations dominated the femtosecond laser-induced microstructural deformation, affecting the nano-hardness of the irradiated surface. As a result, the nano-hardness of Si structures fabricated using femtosecond laser processing was maximally enhanced by 9.54%. This work provides new information about ultrafast laser-induced surface and subsurface damage, which is significant for the efficient and high-precision fabrication of Si-based functional micro-nano devices.

materials science, multidisciplinary
The influence of ultrafast temporal energy regulation on the morphology of Si surfaces through femtosecond double pulse laser irradiation

M. Barberoglou,G.D. Tsibidis,D. Gray,E. Magoulakis,C. Fotakis,E. Stratakis,P. A. Loukakos

DOI: https://doi.org/10.1007/s00339-013-7893-y

2013-07-31

Abstract:The effect of ultrashort laser-induced morphological changes upon irradiation of silicon with double pulse sequences is investigated under conditions that lead to mass removal. The temporal delay between twelve double and equal-energy pulses (Ep=0.24J/cm2 each, with pulse duration tp=430fs, 800nm laser wavelength) was varied between 0 and 14ps and a decrease of the damaged area, crater depth size and periodicity of the induced subwavelength ripples (by 3-4%) was observed with increasing pulse delay. The proposed underlying mechanism is based on the combination of carrier excitation and energy thermalization and capillary wave solidification and aims to provide an alternative explanation to the control of ripple periodicity by temporal pulse tailoring. This work demonstrates the potential of pulse shaping technology to improve nano/micro processing.

Materials Science
Femtosecond Laser-Induced Phase Transformation on Single-Crystal 6H-SiC

Hongsheng Quan,Ruishi Wang,Weifeng Ma,Zhonghuai Wu,Lirong Qiu,Kemi Xu,Weiqian Zhao

DOI: https://doi.org/10.3390/mi15020242

IF: 3.4

2024-02-07

Micromachines

Abstract:Silicon carbide (SiC) is widely used in many research fields because of its excellent properties. The femtosecond laser has been proven to be an effective method for achieving high-quality and high-efficiency SiC micromachining. In this article, the ablation mechanism irradiated on different surfaces of 6H-SiC by a single pulse under different energies was investigated. The changes in material elements and the geometric spatial distribution of the ablation pit were analyzed using micro-Raman spectroscopy, Energy Dispersive Spectrum (EDS), and an optical microscope, respectively. Moreover, the thresholds for structural transformation and modification zones of 6H-SiC on different surfaces were calculated based on the diameter of the ablation pits created by a femtosecond laser at different single-pulse energies. Experimental results show that the transformation thresholds of the Si surface and the C surface are 5.60 J/cm2 and 6.40 J/cm2, corresponding to the modification thresholds of 2.26 J/cm2 and 2.42 J/cm2, respectively. The Raman and EDS results reveal that there are no phase transformations or material changes on different surfaces of 6H-SiC at low energy, however, decomposition and oxidation occur and then accumulate into dense new phase material under high-energy laser irradiation. We found that the distribution of structural phase transformation is uneven from the center of the spot to the edge. The content of this research reveals the internal evolution mechanism of high-quality laser processing of hard material 6H-SiC. We expect that this research will contribute to the further development of SiC-based MEMS devices.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Pulsed Laser Heating-induced Surface Rapid Cooling and Amorphization

Tian Longzhang,Wang Xinwei

DOI: https://doi.org/10.1557/proc-1066-a05-06

2008-01-01

Abstract:In this work, hybrid atomistic-macroscale simulation is conducted to explore the crystallization process of Si surface in the situation of fast melting and solidification induced by ultrafast laser heating and heat conduction. Using the environment-dependent interatomic potential, samples containing 2,880 and 11,520 Si atoms are modeled to provide accurate details for the relationship between the finial crystal structure and the parameters of laser pulses. For different pulsed lasers, amorphous layers are found to form when the laser fluence exceeds a certain critical value. An empirical correlation Ec = 448.76 × (tg)0.56 is obtained to relate this critical fluence to the laser pulse width. It is found that the final thickness of amorphous layer is related to the fluence of the laser pulse with the same full width at half maximum (FWHM). Employing laser pulses with FWHM = 6.67 ns, the formation and recrystallization processes of a 12 nm thick amorphous layer is further investigated, which may have great potential in laser manufacture techniques for Si-associated structures.
Picosecond laser pulse-driven crystallization behavior of SiSb phase change memory thin films

Huan Huang,Simian Li,Fengxiao Zhai,Yang Wang,Tianshu Lai,Yiqun Wu,Fuxi Gan

DOI: https://doi.org/10.1016/j.matchemphys.2011.03.016

IF: 4.778

2011-01-01

Materials Chemistry and Physics

Abstract:Transient phase change crystallization process of SiSb phase change thin films under the irradiation of picosecond (ps) laser pulse was studied using time-resolved reflectivity measurements. The ps laser pulse-crystallized domains were characterized by atomic force microscope, Raman spectra and ellipsometrical spectra measurements. A reflectivity contrast of about 15% can be achieved by ps laser pulse-induced crystallization. A minimum crystallization time of 11 ns was achieved by a low-fluence single ps laser pulse after pre-irradiation. SiSb was shown to be very promising for fast phase change memory applications.
Femtosecond-Laser-Ablation Dynamics in Silicon Revealed by Transient Reflectivity Change

Tao Feng,Gong Chen,Hainian Han,Jie Qiao

DOI: https://doi.org/10.3390/mi13010014

IF: 3.4

2021-12-23

Micromachines

Abstract:The dynamics of ablation in monocrystalline silicon, from electron-hole plasma generation to material expansion, upon irradiation by a single femtosecond laser pulse (1030 nm, 300 fs pulse duration) at a wide range of fluences is investigated using a time-resolved microscopy technique. The reflectivity evolution obtained from dynamic images in combination with a theoretical Drude model and a Two-Temperature model provides new insights on material excitation and ablation process. For all fluences, the reflectivity increased to a temporary stable state after hundreds of femtoseconds. This behavior was predicted using a temperature-dependent refractive index in the Drude model. The increase in velocity of plasma generation with increasing fluence was theoretically predicted by the Two-Temperature model. Two ablation regimes at high fluences (>0.86 J/cm2) were identified through the measured transient reflectivity and ablation crater profile. The simulation shows that the fluence triggering the second ablation regime produces a boiling temperature (silicon, 2628 K).

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
[30-years of sport medicine and rehabilitation].

M. Macek

1976-02-01

Abstract:
Serum gamma-glutamyltransferase as a measure of sporidesmin-induced liver damage in sheep.

N. Towers,G. Stratton

DOI: https://doi.org/10.1080/00480169.1978.34508

1978-04-01

New Zealand Veterinary Journal

Abstract:Abstract The relationship between serum concentrations of the enzyme gamma-glutamyltransferase (GGT) after experimental sporidesmin intoxication, and the severity of the liver damage seen on post-mortem examination of the liver, has been examined. Serum GGT activity in blood collected 2 to 3 weeks after ad-ministering the toxin is positively correlated to a subjective liver damage score and to losses in bodyweight associated with the intoxication. Determination of GGT activities provides a sensitive method for detecting and measuring liver damage in experimental sporidesmin poisoning. In the field, GGT determinations should prove useful in diagnosing liver damage associated with subclinical and clinical facial eczema giving additional information about the severity of the lesion.
Pausing ultrafast melting by timed multiple femtosecond-laser pulses

Tobias Zier,Eeuwe S. Zijlstra,Martin E. Garcia,David A. Strubbe

2024-11-20

Abstract:An intense femtosecond-laser excitation of a solid induces highly nonthermal conditions. In materials like silicon, laser-induced bond-softening leads to a highly incoherent ionic motion and eventually nonthermal melting. But is this outcome an inevitable consequence, or can it be controlled? Here, we performed ab initio molecular dynamics simulations of crystalline silicon after timed multiple femtosecond-laser pulse excitations with fluence above the nonthermal melting threshold. Our results demonstrate an excitation mechanism that pauses nonthermal melting and creates a metastable state instead, with an electronic structure similar to the ground state. This mechanism can be generalized to other materials, potentially enabling structural and/or electronic transitions to metastable phases in the high-excitation regime. In addition, our approach could be used to switch off nonthermal contributions in experiments, allowing reliable electron-phonon coupling constants to be obtained more easily.

Materials Science
Single-Shot Multi-Stage Damage and Ablation of Silicon by Femtosecond Mid-infrared Laser Pulses

Kevin Werner,Vitaly Gruzdev,Noah Talisa,Kyle Kafka,Drake Austin,Carl M. Liebig,Enam Chowdhury

DOI: https://doi.org/10.1038/s41598-019-56384-0

2019-10-01

Abstract:Although ultrafast laser materials processing has advanced at a breakneck pace over the last two decades, most applications have been developed with laser pulses at near-IR or visible wavelengths. Recent progress in mid-infrared (MIR) femtosecond laser source development may create novel capabilities for material processing. This is because, at high intensities required for such processing, wavelength tuning to longer wavelengths opens the pathway to a special regime of laser-solid interactions. Under these conditions, due to the ${\lambda}^2$ scaling, the ponderomotive energy of laser-driven electrons may significantly exceed photon energy, band gap and electron affinity and can dominantly drive absorption, resulting in a paradigm shift in the traditional concepts of ultrafast laser-solid interactions. Irreversible high-intensity ultrafast MIR laser-solid interactions are of primary interest in this connection, but they have not been systematically studied so far. To address this fundamental gap, we performed a detailed experimental investigation of high-intensity ultrafast modifications of silicon by single femtosecond MIR pulses (${\lambda}$ = 2.7 - 4.2 ${\mu}$m). Ultrafast melting, interaction with silicon-oxide surface layer, and ablation of the oxide and crystal surfaces were ex-situ characterized by scanning electron, atomic-force, and transmission electron microscopy combined with focused ion-beam milling, electron diffractometry, and ${\mu}$-Raman spectroscopy. Laser induced damage and ablation (LIDA) thresholds were measured as functions of laser wavelength. The traditional theoretical models did not reproduce the wavelength scaling of the damage thresholds. To address the disagreement, we discuss possible novel pathways of energy deposition driven by the ponderomotive energy and field effects characteristic of the MIR wavelength regime.

Materials Science,Optics
Ultrafast laser interaction with transparent multi-layer SiO2/Si3N4 films

R. Ricca,V. Boureau,Y. Bellouard

DOI: https://doi.org/10.1063/5.0065726

2021-12-02

Abstract:We investigate the use of ultrafast lasers exposure to induce localized crystallization and elemental redistribution in amorphous dielectric multi-layers, composed of alternating Si3N4and SiO2layers of sub-micron thickness. Specifically,we report on the occurrence of a laser-induced elemental intermixing process and on the presence of silicon nanocrystals clusters localized within the multi-layers structure. The spatial distribution of these clusters goes significantly beyond the zone under direct laser exposure providing evidences of energy being channeled transversely to the laser propagation axis at the interface of the nanoscale layers. Thanks to the extreme conditions reigning during laser exposure, this process transposed to various materials may offer a pathway for local and selective crystallization of a variety of compounds and phases, difficult to obtain otherwise.

Mesoscale and Nanoscale Physics,Materials Science
Fast Phase Transition Process of Ge2sb2te5 Film Induced by Picosecond Laser Pulses with Identical Fluences

Huan Huang,Fangyuan Zuo,Fengxiao Zhai,Yang Wang,Tianshu Lai,Yiqun Wu,Fuxi Gan

DOI: https://doi.org/10.1063/1.3222851

IF: 2.877

2009-01-01

Journal of Applied Physics

Abstract:Fast phase transition processes on Ge2Sb2Te5 film induced by picosecond laser pulses were studied using time-resolved reflectivity measurements. It was found that after picosecond laser pulse priming, reversible switching could be occurred upon picosecond laser pulse irradiation with the same well-chosen fluence. This is very different from general knowledge that reversible phase change process will be induced by laser pulses with different powers; that is, amorphization process needs much higher fluence than crystallization process. The possible mechanism was discussed qualitatively by a melting-cooling model.
Effect of Crystallographic Orientation on Structural Response of Silicon to Femtosecond Laser Irradiation

Zhang Xin,Zhang Liang,Mironov Sergey,Xiao Rongshi,Guo Liang,Huang Ting

DOI: https://doi.org/10.1007/s00339-021-04341-y

2021-01-01

Applied Physics A

Abstract:Femtosecond laser has been widely utilized for modification of crystal structure to achieve desired functions. So far, however, the effect of crystallographic orientation on the induced structure by femtosecond laser processing has yet been comprehensively studied. The present work is undertaken in an attempt to fill this gap in our knowledge. To this end, commercial-purity Si is used as a target material and high-resolution transmission electron microscopy as well as electron backscatter diffraction are applied to examine the irradiation-induced microstructural changes. The structural response of the pulsed material is found to be principally influenced by the crystallographic orientation of the target surface. Specifically, at the surface orientation close to {111}, a pronounced amorphization effect is observed whereas no disordered material is detected at the orientations close to {100}. This phenomenon could be explained by the lowest crystallization speed required by the (111) surface due to its smallest surface energy. Compared with nanosecond laser, non-thermal melting induced by femtosecond laser induces mild thermal gradient and favors recrystallization.
Investigation of structural transformation and residual stress under single femtosecond laser pulse irradiation of 4H–SiC

Haiyan Shi,Qi Song,Yu Hou,Song Yue,Yan Li,Zhe Zhang,Man Li,Kunpeng Zhang,Zichen Zhang

DOI: https://doi.org/10.1016/j.ceramint.2022.03.063

IF: 5.532

2022-03-01

Ceramics International

Abstract:Silicon carbide (SiC) is an attractive semiconductor material for devices that operate under extreme conditions. However, its high hardness and chemical stability hinder micromachining. Femtosecond laser has been proposed extensively as an effective micromachining tool for SiC. However, the fundamental mechanisms of laser-material interaction during femtosecond laser irradiation process remain elusive. This paper presents a comprehensive study of the structural transformation and residual stress induced by irradiating a 4H–SiC target with a single-pulse femtosecond laser. The energy dependence of the structural characteristics at the spot center and the spatial distribution across the laser spot were determined using optical microscopy and micro-Raman spectroscopy. The effect of the laser fluence on the residual stress was discussed. The obtained results showed that no structural changes occurred at low energy, whereas bond breaking occurred among crystalline SiC (c-SiC) at high energy. A central disk with no structural transformation and no residual stress was formed for the fluence of 22.2 J/cm2, owing to phase explosion-induced spluttering. Meanwhile, an inhomogeneous distribution of the structural transformation was generated from the spot centre to the edge. Based on this, threshold fluences for modification and structural transformation were proposed and calculated. The fundamental mechanisms for different laser-fluence regimes are discussed, and some suggestions for improving the surface quality are put forward. This study provides deep insights into the laser-material interaction mechanisms and is beneficial for optimising the utilisation of femtosecond laser for 4H–SiC micromachining.

materials science, ceramics
Crystallinity in periodic nanostructure surface on Si substrates induced by near- and mid-infrared femtosecond laser irradiation

Reina Miyagawa,Daisuke Kamibayashi,Hirotaka Nakamura,Masaki Hashida,Heishun Zen,Toshihiro Somekawa,Takeshi Matsuoka,Hiroyuki Ogura,Daisuke Sagae,Yusuke Seto,Takahisa Shobu,Aki Tominaga,Osamu Eryu,Norimasa Ozaki

DOI: https://doi.org/10.1038/s41598-022-25365-1

2022-12-05

Abstract:Laser-induced periodic surface structure (LIPSS), which has a period smaller than the laser wavelength, is expected to become a potential technique for fine surface processing. We report the microscopic and macroscopic observations of the crystallinity of LIPSSs, where the characteristics such as defects generation and residual strain were analyzed, respectively. The LIPSSs were formed on a Si substrate using two different femtosecond pulses from Ti:Sapphire laser with near-infrared wavelength (0.8 μm) and free-electron laser (FEL) with mid-infrared wavelength (11.4 μm). The photon energies of the former and latter lasers used here are higher and lower than the Si bandgap energies, respectively. These LIPSSs exhibit different crystalline states, where LIPSS induced by Ti:Sapphire laser show residual strain while having a stable crystallinity; in contrast, FEL-LIPSS generates defects without residual strain. This multiple analysis (microscopic and macroscopic observations) provides such previously-unknown structural characteristics with high spatial resolution. To obtain LIPSS with suitable properties and characteristics based on each application it is paramount to identify the laser sources that can achieve such properties. Therefore, identifying the structural information of the LIPSS generated by each specific laser is of great importance.
Femtosecond laser ablation of crystals SiO2 and YAG

Shizhen Xu,Jianrong Qiu,Tianqing Jia,Chengbin Li,Haiyi Sun,Zhizhan Xu

DOI: https://doi.org/10.1016/j.optcom.2007.01.079

IF: 2.4

2007-01-01

Optics Communications

Abstract:Damage threshold of crystals SiO2 and YAG against 60–900fs, 800nm laser pulses are reported. The breakdown mechanisms were discussed based on the double-flux model and Keldysh theory. We found that impact ionization plays the important role in the femtosecond laser-induced damage in crystalline SiO2, while the roles of photoionization and impact ionization in YAG crystals depend on the laser pulse durations.
Dynamics of Ultrafast Phase Transitions in (001) Si on the Shock-Wave Front

Evgenii Igorevich Mareev,Fedor Viktorovich Potemkin

DOI: https://doi.org/10.3390/ijms23042115

IF: 5.6

2022-02-14

International Journal of Molecular Sciences

Abstract:We demonstrate an ultrafast (<0.1 ps) reversible phase transition in silicon (Si) under ultrafast pressure loading using molecular dynamics. Si changes its structure from cubic diamond to β-Sn on the shock-wave front. The phase transition occurs when the shock-wave pressure exceeds 11 GPa. Atomic volume, centrosymmetry, and the X-ray-diffraction spectrum were revealed as effective indicators of phase-transition dynamics. The latter, being registered in actual experimental conditions, constitutes a breakthrough in the path towards simple X-ray optical cross-correlation and pump-probe experiments.

biochemistry & molecular biology,chemistry, multidisciplinary

Ultrafast Phase Transition of Si by Femtosecond Laser Pulse Irradiation

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Numerical Investigation of the Kinetics of Non-Equilibrium Phase Transitions in Silicon Induced by an Ultra-Short Laser Pulse

Effect of high-power nanosecond and femtosecond laser pulses on silicon nanostructures

One-Step femtosecond laser irradiation of Single-Crystal Silicon: Evolution of Micro-Nano structures and damage investigation

The influence of ultrafast temporal energy regulation on the morphology of Si surfaces through femtosecond double pulse laser irradiation

Femtosecond Laser-Induced Phase Transformation on Single-Crystal 6H-SiC

Pulsed Laser Heating-induced Surface Rapid Cooling and Amorphization

Picosecond laser pulse-driven crystallization behavior of SiSb phase change memory thin films

Femtosecond-Laser-Ablation Dynamics in Silicon Revealed by Transient Reflectivity Change

[30-years of sport medicine and rehabilitation].

Serum gamma-glutamyltransferase as a measure of sporidesmin-induced liver damage in sheep.

Pausing ultrafast melting by timed multiple femtosecond-laser pulses

Single-Shot Multi-Stage Damage and Ablation of Silicon by Femtosecond Mid-infrared Laser Pulses

Ultrafast laser interaction with transparent multi-layer SiO2/Si3N4 films

Fast Phase Transition Process of Ge2sb2te5 Film Induced by Picosecond Laser Pulses with Identical Fluences

Effect of Crystallographic Orientation on Structural Response of Silicon to Femtosecond Laser Irradiation

Investigation of structural transformation and residual stress under single femtosecond laser pulse irradiation of 4H–SiC

Crystallinity in periodic nanostructure surface on Si substrates induced by near- and mid-infrared femtosecond laser irradiation

Femtosecond laser ablation of crystals SiO2 and YAG

Dynamics of Ultrafast Phase Transitions in (001) Si on the Shock-Wave Front