Superior ferroelectric properties and fatigue resistance in Tb modified (BaCa)(ZrTi)O3 film grown on SrTiO3 prepared by pulsed laser deposition

Haowei Lu,Jiaqi Lin,Haiwu Zheng
DOI: https://doi.org/10.1016/j.apsusc.2020.146892
IF: 6.7
2020-10-01
Applied Surface Science
Abstract:<p>The ferroelectric properties and fatigue resistance of 47(Ba<sub>0.7</sub>Ca<sub>0.3</sub>)TiO<sub>3</sub>–53Ba(Zr<sub>0.2</sub>Ti<sub>0.8</sub>)O<sub>3</sub>(BCZT) film can be enhanced by Tb modified and adding SrTiO<sub>3</sub>(STO) buffer layer using pulsed laser deposition(PLD) method. The 0.4 mol% Tb doped BCZT/STO(0.4Tb-BCZT/STO) film possesses optimal comprehensive electrical properties. Comparing with traditional BCZT film gown on Pt, the residual polarization(<em>P</em><sub>r</sub>), piezoelectric coefficient(<em>d</em><sub>33</sub>*), permittivity(<em>ε</em><sub>r</sub>) of 0.4Tb-BCZT/STO film increase from 3.6 to 9.0 μC/cm<sup>2</sup>, 52 to 75 pm/V, 880 to 1210 and loss(tanθ) decrease from 0.028 to 0.017(10<sup>4</sup> Hz), respectively. During a high electric field, the degradation of <em>P</em><sub>r</sub> is only 5.8% and the increase of <em>E</em><sub>c</sub> is about 6.1% in 0.4Tb-BCZT/STO film after 10<sup>9</sup> switching cycles, which show the excellent fatigue resistance. The improved polarization and fatigue performances of film benefits from the reduced pinning influence with lower defect concentration based on a series of experiments and theoretical simulation. This work demonstrates the potential candidates of lead-free nonvolatile memory micro-devices applied in microelectronic industry.</p>
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
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