Abstract:Some metal-organic (MO) lattices with a strong spin-orbit coupling (SOC) have been predicted to behave as two-dimensional topological insulators (2D-TIs). The polarization of metallic edge states with the opposite electron spin in 2D-TIs, in otherwise insulating 2D MO sheets, is interesting for spintronic technology. The 2D-TI character of MO lattices, however, has not been confirmed by experiment. The main challenge has been that MO lattices , usually self-organize on metal substrates, which can introduce interactions that modify and can even suppress the topological, character. We calculate the topological properties of 2D metal-organic honeycomb lattice composed of noble metal atom vertices and bidentate 1,4-phenylene diisocyanide (PDI) linkers, which form metal-organic honeycomb-Kagome lattices (MOHKLs) band structure, free and on metal substrates. The selection of vertices and linkers can independently tune the SOC and transport properties. Calculations predict that unsupported 2D MOHKLs indeed possess SOC-induced gaps between the Dirac bands at the K-points. Furthermore, nanoribbons of such MOHKLs are calculated to possess metallic spin-polarized edge states. Supporting MOHKLs on a metal substrate, however, introduces an electric potential, giving rise to Rashba SOC, which can collapse the band gaps. Molecule-resolved measurements by scanning tunneling microscopy and spectroscopy test the electronic properties of Ag-PDI MOHKL self-assembled on Ag(111) surface, but find no evidence of the 2D-TI electronic band structure. Releasing MOHKLs from the electronic and chemical influences of substrates to preserve their TI properties remains a challenge. The Rashba SOC provides an additional tool for designing 2D-TI band structures.

Honeycomb-Lattice Mott Insulator on Tantalum Disulphide

Two-dimensional Mott-Hubbard Electrons in an Artificial Honeycomb Lattice.

Large gap two dimensional topological insulators: bilayer triangular lattice TlM (M = N, P, As, Sb)

Band insulator to Mott insulator transition in 1<i>T</i>-TaS<sub>2</sub>

Deconstruction of the Electronic Properties of a Topological Insulator with a Two-Dimensional Noble Metal–Organic Honeycomb–Kagome Band Structure

Band insulator to Mott insulator transition in 1T-TaS$_2$

Metal to Mott Insulator Transition in Two-dimensional 1T-TaSe$_2$

Transition-Metal Oxide (111) bilayers

Engineering Topological States in a Two-Dimensional Honeycomb Lattice.

Conductivity of Dirac-like surface states in correlated honeycomb transition metal oxide Mott insulators

Dualistic insulator states in 1T-TaS2 crystals

Topological states in honeycomb arrays of implanted acceptors in semiconductors

Electronic Janus lattice and kagome-like bands in coloring-triangular MoTe2 monolayers

Two-dimensional Kagome-in-Honeycomb materials (MN$_4$)$_3$C$_{32}$ (M=Pt or Mn)

Takagi Topological Insulator on the Honeycomb Lattice

Realization of Honeycomb Tellurene with Topological Edge States

Visualizing the evolution from Mott insulator to Anderson insulator in Ti-doped 1 T -TaS 2

Dirac magnons in a honeycomb lattice quantum XY magnet CoTiO3

Band Insulator to Mott Insulator Transition in 1 T -Tas 2

Electronic structures and Mott state of epitaxial TaS2 monolayers

Engineering topological states in two-dimensional honeycomb lattice