Effect of lattice-induced strain on microwave dielectric polarization and properties: A case study of Ga-based garnet

Haotian Xie,Ying Tang,Yang Yang,Ning Zhang,Xiaolong Gu,Huaicheng Xiang

DOI: https://doi.org/10.1016/j.jallcom.2023.171742

IF: 6.2

2023-08-18

Journal of Alloys and Compounds

Abstract:In microwave dielectric materials, the phenomenon that the measured permittivity ( ε r ) is inconsistent with the calculated permittivity ( ε r (C-M) ) often occurs. In the present work, the intrinsic factors affecting the microwave dielectric properties of Ga-based garnet Ca 3 B 1.5 Ga 3.5 O 12 (B = Nb, Ta) are studied by bond valence and the Phillips-Van Vechten-Levine (P-V-L) methods, and the relationship between lattice-induced strain effect and dielectric polarization is elucidated. Since the ionic polarizability of Nb 5+ is lower than that of Ta 5+ , the ε r (C-M) values of Ca 3 Nb 1.5 Ga 3.5 O 12 (CNG) and Ca 3 Ta 1.5 Ga 3.5 O 12 (CTG) are 11.06 and 12.17, respectively. However, this is the opposite trend of the measured values (15.00 and 12.62). The global instability index ( GII ) is equal to 0.013 and 0.044 v.u. , respectively. Both the indexes, bond strain index ( BSI ) and GII , are related to the entire crystal structure. A stronger lattice-induced compressive strain and a higher degree of covalency lead to a lower measured ε r , a higher Q×f , a higher temperature coefficient of permittivity τ ε , and a larger negative τ f .

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering