Symmetry-dependent field-free switching of perpendicular magnetization
Liang Liu,Chenghang Zhou,Xinyu Shu,Changjian Li,Tieyang Zhao,Weinan Lin,Jinyu Deng,Qidong Xie,Shaohai Chen,Jing Zhou,Rui Guo,Han Wang,Jihang Yu,Shu Shi,Ping Yang,Stephen Pennycook,Aurelien Manchon,Jingsheng Chen
DOI: https://doi.org/10.1038/s41565-020-00826-8
IF: 38.3
2021-01-18
Nature Nanotechnology
Abstract:Modern magnetic-memory technology requires all-electric control of perpendicular magnetization with low energy consumption. While spin–orbit torque (SOT) in heavy metal/ferromagnet (HM/FM) heterostructures<sup><a href="#ref-CR1">1</a>,<a href="#ref-CR2">2</a>,<a href="#ref-CR3">3</a>,<a href="#ref-CR4">4</a>,<a href="/articles/s41565-020-00826-8#ref-CR5">5</a></sup> holds promise for applications in magnetic random access memory, until today, it has been limited to the in-plane direction. Such in-plane torque can switch perpendicular magnetization only deterministically with the help of additional symmetry breaking, for example, through the application of an external magnetic field<sup><a href="/articles/s41565-020-00826-8#ref-CR2">2</a>,<a href="/articles/s41565-020-00826-8#ref-CR4">4</a></sup>, an interlayer/exchange coupling<sup><a href="#ref-CR6">6</a>,<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="/articles/s41565-020-00826-8#ref-CR9">9</a></sup> or an asymmetric design<sup><a href="#ref-CR10">10</a>,<a href="#ref-CR11">11</a>,<a href="#ref-CR12">12</a>,<a href="#ref-CR13">13</a>,<a href="/articles/s41565-020-00826-8#ref-CR14">14</a></sup>. Instead, an out-of-plane SOT<sup><a href="/articles/s41565-020-00826-8#ref-CR15">15</a></sup> could directly switch perpendicular magnetization. Here we observe an out-of-plane SOT in an HM/FM bilayer of <i>L</i>1<sub>1</sub>-ordered CuPt/CoPt and demonstrate field-free switching of the perpendicular magnetization of the CoPt layer. The low-symmetry point group (3<i>m</i>1) at the CuPt/CoPt interface gives rise to this spin torque, hereinafter referred to as 3<i>m</i> torque, which strongly depends on the relative orientation of the current flow and the crystal symmetry. We observe a three-fold angular dependence in both the field-free switching and the current-induced out-of-plane effective field. Because of the intrinsic nature of the 3<i>m</i> torque, the field-free switching in CuPt/CoPt shows good endurance in cycling experiments. Experiments involving a wide variety of SOT bilayers with low-symmetry point groups<sup><a href="/articles/s41565-020-00826-8#ref-CR16">16</a>,<a href="/articles/s41565-020-00826-8#ref-CR17">17</a></sup> at the interface may reveal further unconventional spin torques in the future.
materials science, multidisciplinary,nanoscience & nanotechnology