Fabrication and ameliorating the features of PMMA/Si3N4/SnO2 promising nanocomposites for multifunctional optics and quantum nanoelectronics applications

Ahmed Hashim,Hamed Ibrahim,Aseel Hadi
DOI: https://doi.org/10.1007/s11082-024-07619-6
IF: 3
2024-10-18
Optical and Quantum Electronics
Abstract:The current work aims to synthesize of silicon nitride(Si 3 N 4 )/tin dioxide (SnO 2 ) nanomaterials filled poly-methyl methacrylate(PMMA) as a future and advanced nanostructures to utilize in a variety of optical and tailored nanoelectronics applications. The structural, optical and dielectric properties of PMMA/Si 3 N 4 /SnO 2 films were examined. The obtained results indicated that the absorbance of PMMA increased of 51.2% at λ = 280 nm (UV-S), while the transmittance reduced of 52.6% with rising Si 3 N 4 /SnO 2 NPs content of 6.6 wt.%. On other hand, the absorbance increased of 56.3% at λ = 580 nm (VIS-S) and 59.9% at λ = 780 nm (NIR-S). The indirect energy gap of PMMA reduced from 4.3 to 3 eV for allowed transition and from 4 to 2.3 eV for forbidden transition when the Si 3 N 4 /SnO 2 NPs content increased of 6.6 wt.%, and these results are important in numerous optoelectronics fields. The optical parameters of PMMA increased with increasing Si 3 N 4 /SnO 2 NPs content. The dielectric properties of PMMA enhanced with addition of Si 3 N 4 /SnO 2 NPs content. Finally, the results showed that the PMMA/Si 3 N 4 /SnO 2 films can be considered as potential and promising nanocomposites to exploit in various future optoelectronics nanodevices.
engineering, electrical & electronic,optics,quantum science & technology
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