Fabrication and Tuning the Structural and Optical Features of SiO2/ Si3N4 Nanomaterials Doped PS for Promising Optoelectronics Applications

Arshad Fadhil Kadhim,Ghaith Ahmed,Ahmed Hashim
DOI: https://doi.org/10.1007/s10904-024-03075-7
IF: 3.518
2024-05-03
Journal of Inorganic and Organometallic Polymers and Materials
Abstract:This study aims to develop of silica (SiO 2 )/silicon nitride(Si 3 N 4 ) nanomaterials doped polystyrene(PS) for use in a variety of electronics and optical nanodevices. By casting method, the films of (PS-SiO 2 -Si 3 N 4 ) were coursed. The structure characteristics of (PS-SiO 2 - Si 3 N 4 )nanostructures were studied including optical microscopy(OM) and FTIR, and optical characteristics of (PS-SiO 2 -Si 3 N 4 ) nanostructures also were studied. The OM confirmed that good distribution of (SiO 2 /Si 3 N 4 )NPs inside the matrix of PS and the FTIR indicates that there is a physical interaction between the polymer (PS) and (SiO 2 -Si 3 N 4 ) NPs. The optical characteristics were measured at wavelengths ranging from 260 to 760 nm. The results showed when the ratio reached 6.9 wt% from the SiO 2 and Si 3 N 4 NPs that the transmission(T) reduced while the absorption(A) increased, this capability qualifies it for use in a variety of optical fields. The energy gap(E g ) of PS when the SiO 2 and Si 3 N 4 NPs content reached 6.9 wt% decreased, because of this behaviour, (PS-SiO 2 - Si 3 N 4 ) nanostructures are regarded as crucial for optical and optoelectronic nanodevices. With increasing concentrations of SiO 2 and Si 3 N 4 NPs, the optical constants, absorption coefficient, refractive index, extinction coefficient, real and imaginary dielectric constants, and optical conductivity rise. Lastly, the results confirmed the optical properties study that the (PS-SiO 2 -Si 3 N 4 ) nanostructures might be used in a variety of nanoelectronics applications.
polymer science
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