Abstract:Broadband photodetectors are of great importance for numerous optoelectronic applications. Two-dimensional (2D) tungsten disulfide (WS2), an important family member of transition-metal dichalcogenides (TMDs), has shown great potential for high-sensitivity photodetection due to its extraordinary properties. However, the inherent large bandgap of WS2 and the strong interface recombination impede the actualization of high-sensitivity broadband photodetectors. Here, we demonstrate the fabrication of an ultrabroadband WS2/Ge heterojunction photodetector through defect engineering and interface passivation. Thanks to the narrowed bandgap of WS2 induced by the vacancy defects, the effective surface modification with an ultrathin AlOx layer, and the well-designed vertical n–n heterojunction structure, the WS2/AlOx/Ge photodetector exhibits an excellent device performance in terms of a high responsivity of 634.5 mA/W, a large specific detectivity up to 4.3 × 1011 Jones, and an ultrafast response speed. Significantly, the device possesses an ultrawide spectral response spanning from deep ultraviolet (200 nm) to mid-wave infrared (MWIR) of 4.6 μm, along with a superior MWIR imaging capability at room temperature. The detection range has surpassed the WS2-based photodetectors in previous reports and is among the broadest for TMD-based photodetectors. Our work provides a strategy for the fabrication of high-performance ultrabroadband photodetectors based on 2D TMD materials.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.1c02007?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.1c02007</a>.I–V curves of Au–WS2–Au and In/Ga–Ge–In/Ga structures; I–V curves of the heterojunction with different AlOx thickness; photoresponse performance of Ge wafer and the WS2/AlOx/Ge heterojunction device measured under light illumination of 1550 nm; current noise power spectrum of the WS2/AlOx/Ge heterojunction device; photoresponse property of the device to UV light of 265 nm; temperature-dependent current of the WS2/AlOx/Ge heterojunction device; theoretically calculated electronic band structures of WS2 with different S/W atomic ratios; EDS spectrum of WS2 layer with an S/W ratio of 1.81; temporal photoresponse of the WS1.81-based heterojunction device to IR light signals of 2.2 and 3.0 μm; optical image and photoresponse properties of a WS2 flake; Tauc plots of WS2 films; photoresponse performances of a WS2/Si heterojunction; response speeds of a WS2/AlOx/Ge heterojunction device at 2.2, 3.0, and 4.6 μm; calculated energy band diagram and carrier concentration distribution; schematic diagrams of fabrication process for the heterojunction device (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.1c02007/suppl_file/nn1c02007_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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