Abstract:High‐performance flexible OTFTs with low operational voltages are fabricated by combining a dielectric layer (pV3D3) and a crystalline organic semiconductor (Ph‐BTBT‐10). The resulting transistors exhibit exceptional charge carrier mobility (up to 7 cm2 V−1s−1) and low threshold voltage (VT ≈ 0 V). Extended air stability, mechanical flexibility, and uniform performance during large‐scale glass and parylene substrate fabrication are maintained by them. For applications involving the implantation of organic thin‐film transistors (OTFTs) in flexible environments, maintaining uniform device performance and ultrathin profiles with excellent mechanical stability is crucial for dynamic deformable conditions. This study presents high‐performance, mechanically flexible ultrathin OTFTs with a thickness under 5 μm, designed to be scalable for utilization in large areas. The OTFTs utilized an organosilicon polymer dielectric layer synthesized via initiated chemical vapor deposition combined with the crystalline organic semiconductor 2‐Decyl‐7‐phenyl[1]benzothieno[3,2‐b][1]benzothiophene (Ph‐BTBT‐10). Compared with conventional organic transistors, the OTFTs exhibited exceptional features, such as a charge carrier mobility of up to 7 cm2 V−1 s−1 and a near‐zero threshold voltage. Their performance is showcased across 900 devices on a 10 cm × 10 cm substrate to ensure uniformity and scalability. Additionally, the OTFTs demonstrate remarkable resilience to mechanical deformation, with a 97.4% mobility retention rate under a 20% tensile compression. After 1000 cycles of repeated deformation stress, they maintain a robust 94.6% performance level compared with the initial state. In summary, the ultrathin flexible OTFTs exhibit exceptional resilience to mechanical deformation, extended air exposure, uniformity in large arrays, and high mobility. This makes them promising for diverse applications, such as in vivo organ monitoring and skin displays.

Highly Robust Flexible Vertical-Channel Thin-Film Transistors Using Atomic-Layer-Deposited Oxide Channels and Zeocoat Spacers on Ultrathin Polyimide Substrates

Highly Robust Flexible Vertical-Channel Thin-Film Transistors Using Atomic-Layer-Deposited Oxide Channels and Zeocoat Spacers on Ultrathin Polyimide Substrates

Flexible vertical-channel thin-film transistors using In-Ga-Zn-O active channel and polyimide spacer on poly(ethylene naphthalate) substrate

Flexible Thin-Film Transistors with Vertical In-Ga-Zn-O Channel Using Atomic-Layer Deposition on Poly(Ethylene Naphthalate) Substrate

Improvement in Device Performance of Vertical Thin-Film Transistors Using Atomic Layer Deposited IGZO Channel and Polyimide Spacer

Implementation of oxide vertical channel TFTs with sub-150 nm channel length using atomic-layer deposited IGZO active and HfO2 gate insulator

Implementation of In–Ga–Zn–O Thin-Film Transistors with Vertical Channel Structures Designed with Atomic-Layer Deposition and Silicon Spacer Steps

Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method

High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition

High‐mobility Flexible Thin‐film Transistors with a Low‐temperature Zirconium‐doped Indium Oxide Channel Layer

DC and AC Performance of InGaZnO Thin-Film Transistors on Flexible PEEK Substrate

Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer

Flexible Transparent Junctionless TFTs with Oxygen-Tuned Indium-Zinc-Oxide Channels

Impact of Strategic Approaches for Improving the Device Performance of Mesa-shaped Nanoscale Vertical-Channel Thin-Film Transistors Using Atomic-Layer Deposited In–Ga–Zn–O Channel Layers

Highly Flexible Electronics from Scalable Vertical Thin Film Transistors

Flexible Dual-layer Channel Gallium-doped ZnO Thin-film Transistors Fabricated on Plastic Substrates at Room Temperature

Large‐Area Processable Ultrathin Organic Transistors with High Mobility and Mechanical Stabilities

P‐1.4: Elevated‐Metal Metal‐Oxide Thin‐Film Transistor with Fluorinated Indium‐Gallium‐Zinc Oxide Channel Towards Flexible Applications

Fabrication of Flexible Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors by a Chemical Vapor Deposition-Free Process on Polyethylene Napthalate