Abstract:Molybdenum disulfide (MoS2) is an alternate absorber layer in 2D solar cells owing to its potential of proficient sunlight harvesting. The optimum electrical and optical properties of MoS2 validate it as a suitable photovoltaic absorber material. This work investigates the performance of 2D (and multi-layer) MoS2-based vertically stacked solar cell by numerical simulation process using one dimensional Solar Cell Capacitance Simulator (SCAPS). Two device configurations based on Schottky junction (ITO/n-MoS2/Au) and pn junction (ITO/n-MoS2/p-MoS2/Au) have been theoretically analyzed. The feasibility of ultra-thin transparent solar cells is also demonstrated, which is motivating from a technological outlook. Initially, the properties of the active layers are optimized to give the highest performance. The findings are explained on the basis of band alignment between the electrodes and the different layers. The potential barrier developed at the interface of different materials governs the output of the cells. The calculations forecast the material properties, which need to be tuned to fabricate solar cells with enhanced efficiency. After optimization, the highest efficiency obtained for single n-MoS2-based solar cell is 10.22%, while for the pn junction solar cell it is 16.86%. The optimized cells exhibit high open circuit voltages of ~ 1.2 V, which is an essential factor for commercial realization of solar cells. Lastly, the performance of transparent solar cells based on thin 2D MoS2 films has been predicted which showcases the efficiency in the range of 0.78-4.36%. These homo-junction device investigations of solely MoS2 layer along with employment of a strict control on the defects during deposition and fabrication of MoS2-based solar cells can ensure better performance of the device. Thus, it can open ways to develop next generation feasible solar cells with higher power density as compared to existing technology.

Enhanced Photovoltaic Performances of Graphene/Si Solar Cells by Insertion of an MoS2 Thin Film

Film Thickness of Transition Metal MoS2/CNFs Electrode Effect on Dye-Sensitized Solar Cell

Silicon solar cell with tunneling oxide on sulfur‐deficient intrinsic MoS2 thin film

Enhanced Monolayer Mos2/Inp Heterostructure Solar Cells by Graphene Quantum Dots

Performance Evaluation of 2D MoS2-based Solar Cells and Realization of Transparent Ultra-thin Devices

In situ growth MoS 2 quantum dots as promising interface materials for silicon solar cells

Solution-processed Graphene-MoS2 Heterostructure for Efficient Hole Extraction in Organic Solar Cells

Metal-Organic-Compound-Modified MoS2 with Enhanced Solubility for High-Performance Perovskite Solar Cells

Mediation of Interfacial Mo2C Bridging Effect in MoS2@Carbon Colloid Dots Featuring Improved Photovoltaic Performances of Si‐Based Hybrid Solar Cells (Adv. Mater. Technol. 12/2024)

Enhanced Electrocatalytic Performance Of Graphene Via Incorporation Of Sio2 Nanoparticles For Dye-Sensitized Solar Cells

Performance enhancement of a planar perovskite solar cell with a PCE of 19.29% utilizing MoS 2D material as a hole transport layer: a computational study

In Situ Growth of MoS2 Onto Co-Based MOF Derivatives Toward High-Efficiency Quantum Dot-Sensitized Solar Cells.

One-step Fabrication of Large-Area Ultrathin MoS2nanofilms with High Catalytic Activity for Photovoltaic Devices

Interface Designed MoS2/GaAs Heterostructure Solar Cell with Sandwich Stacked Hexagonal Boron Nitride

In-situ hydrothermal growth of MoS2 absorber layer for planar heterojunction solar cells

In Situ Growth of MoS2 Onto Co-Based MOF Derivatives Toward High-Efficiency Quantum Dot-Sensitized Solar Cells

Chemical Doping and Enhanced Solar Energy Conversion of Graphene/Silicon Junctions

The Influence of MoS2 Thickness on the Efficiency of Solar Energy Conversion in TiO2/MoS2/P3HT Cells

Layer Number Controllable Molybdenum Disulfide Film Growth and Its Applications in Vertical and Planar Photodetectors

Role of Interfacial Oxide in High-Efficiency Graphene-Silicon Schottky Barrier Solar Cells.

Beyond 22% Power Conversion Efficiency in Type-II MoSi2As4/MoGe2N4 Photovoltaic Vdw Heterostructure