Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds by Isovalent Bismuth Doping
Lijun Zhao,Mingyuan Wang,Jian Yang,Jiabin Hu,Yuan Zhu,Guiwu Liu,Shahid Hussain,Haicheng Shao,Shuangying Lei,Neng Wan,Zhongqi Shi,Guanjun Qiao
DOI: https://doi.org/10.1007/s10854-021-06403-6
2021-06-24
Abstract:Cu<sub>3</sub>SbSe<sub>4</sub>, featuring its earth-abundant, cheap, nontoxic and environmentally friendly constituent elements, can be considered as a promising intermediate temperature thermoelectric (TE) material. Herein, a series of p-type Bi-doped Cu<sub>3</sub>Sb<sub>1−<i>x</i></sub>Bi<sub><i>x</i></sub>Se<sub>4</sub> (<i>x</i> = 0–0.04) samples were fabricated through melting and hot pressing process, and the effects of isovalent Bi-doping on their TE properties were comparatively investigated by experimental and computational methods. TEM analysis indicates that Bi-doped samples consist of Cu<sub>3</sub>SbSe<sub>4</sub> and Cu<sub>2−<i>x</i></sub>Se impurity phases, which is in good agreement with the results of XRD, SEM and XPS. For Bi-doped samples, the reduced electrical resistivity (<i>ρ</i>) caused by the optimized carrier concentrations and enhanced Seebeck coefficient derived from the densities of states near the Fermi level give rise to a high power factor of ~ 1000 µWm<sup>−1</sup> K<sup>−2</sup> at 673 K for the Cu<sub>3</sub>Sb<sub>0.985</sub>Bi<sub>0.015</sub>Se<sub>4</sub> sample. Additionally, the multiscale defects of Cu<sub>3</sub>SbSe<sub>4</sub>-based materials involving point defects, nanoprecipitates, amorphous phases and grain boundaries can strongly scatter phonons to depress lattice thermal conductivity (<i>κ</i><sub>lat</sub>), resulting in a low <i>κ</i><sub>lat</sub> of ~ 0.53 Wm<sup>−1</sup> K<sup>−1</sup> and thermal conductivity (<i>κ</i><sub>tot</sub>) of ~ 0.62 Wm<sup>−1</sup> K<sup>−1</sup> at 673 K for the Cu<sub>3</sub>Sb<sub>0.98</sub>Bi<sub>0.02</sub>Se<sub>4</sub> sample. As a consequence, a maximum ZT value ~ 0.95 at 673 K is obtained for the Cu<sub>3</sub>Sb<sub>0.985</sub>Bi<sub>0.015</sub>Se<sub>4</sub> sample, which is ~ 1.9 times higher than that of pristine Cu<sub>3</sub>SbSe<sub>4</sub>. This work shows that isovalent heavy element doping is an effective strategy to optimize thermoelectric properties of copper-based chalcogenides.