Abstract:Silicon carbide (SiC) power modules are attractive in many applications due to the superiority of their semiconductor characteristics. However, power modules are subjected to repetitive thermo-mechanical stress caused by the mismatch of the coefficient of thermal expansion between different layers of materials. Moreover, the relatively smaller die size of SiC chips makes the heat flux increase significantly, which brings new challenges to the thermal management and reliability of SiC power modules. To tackle these challenges, this article proposes a new thermal enhanced packaging method based on vapor chamber (VC) phase change heat spreader (PCHS) for SiC power modules, achieving the advantages of high thermal conductivity, low weight, low cost, and low thermal stress. In this new design, SiC mosfet bare dies are directly soldered on the top of VC-PCHS, which not only act as heat spreaders but also conduct the drain current of mosfets. The integrated VC-PCHS is optimized based on thermal and thermomechanical performance. An SiC power module prototype directly integrated with VC-PCHS is built using a new fabrication process. Both the simulations and experiments demonstrate significant improvements in thermal and thermomechanical performance. The modules integrated with VC-PCHS can operate under 200 W of power dissipation per die (632 Wcm2) without exceeding the maximum rated junction temperature. This article reveals the potential of directly integrating phase change cooling components inside power modules, providing a new solution to improve the thermal performance and reliability of SiC power modules without adding complexity and energy consumptions to external cooling systems.

An Evaluation on Thermal Performance Improvements for SiC Power Module Integrated with Vapor Chamber in MMC

Advancing Cryogenic Electronic Cooling: A Case Study on Embedded Manifold Microchannels in Micromachined Joule-Thomson Coolers

Simplified Thermal Modeling for IGBT Modules with Periodic Power Loss Profiles in Modular Multilevel Converters

Direct Integration of Optimized Phase-Change Heat Spreaders Into SiC Power Module for Thermal Performance Improvements Under High Heat Flux

Numerical Simulation on the Thermal Performance of a PCM-containing Ventilation System with a Continuous Change in Inlet Air Temperature

Heat spreading performance of SiC-based power module with bonded vapour chamber for electric powertrain integration

Thermal Performances and Annual Damages Comparison of MMC Using Reverse Conducting IGBT and Conventional IGBT Module

Impact Of The Thermal-Interface-Material Thickness On Igbt Module Reliability In The Modular Multilevel Converter

Comparison of High Voltage SiC MOSFET and Si IGBT Power Module Thermal Performance

Thermal Distribution Analysis of Modular Multilevel DC-DC Converters

Electrothermal Analysis of a Double-side Cooling Power Module with Large-area SiC MOSFETs

A Thermal Network Model for Multichip Power Modules Enabling to Characterize the Thermal Coupling Effects

Implementation of Space Vector Modulation (SVM) for Modular Multilevel Converter Based on Submodule Regroup

Active Thermal Control of Hybrid MMC under Over-Modulation Operation

Interleaved Planar Packaging Method of Multichip SiC Power Module for Thermal and Electrical Performance Improvement

Modeling and Simulation of Power Electronic Modules with Microchannel Coolers for Thermo-Mechanical Performance

Transient Thermal Management of SiC Power Modules by an In-Built Thermal Buffer Layer

Development of a steady state electrothermal cosimulation model of SiC power modules

A Highly Integrated Multichip SiC MOSFET Power Module With Optimized Electrical and Thermal Performances

Thermal Analysis of Modular Multilevel Converters under Subsynchronous Oscillation

Junction Temperature Estimation of a SiC MOSFET Module for 800V High-Voltage Application in Electric Vehicles