Scanning strategy-dependent etching rate in the formation of through-via holes by femtosecond laser-assisted etching

Shogo Matsuda,Shigeki Matsuo
DOI: https://doi.org/10.35848/1347-4065/ad3da2
IF: 1.5
2024-05-03
Japanese Journal of Applied Physics
Abstract:In this study, we used femtosecond laser-assisted etching (FLAE) to drill through glass vias (TGVs) in 0.3 mm thick non-alkali glass substrates. In FLAE, the focus of the femtosecond laser pulses is scanned to modify the material along a preprogrammed pattern, and the modified region is preferentially removed by chemical etching. We found that the scanning strategy affected the etching rate along the laser-modified lines. Among four types of scanning strategies tested, the strategy 〈du〉—that is, scanning in a downward direction followed by an upward direction—obtained the highest etching rate. In this case, the etching rate along the laser-modified line was approximately 10 times larger than that of the unmodified region.
physics, applied
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