Abstract:Promising research ﬁelds associated to solid state physics, such as thermoelectrics and spintronics, have been inﬂuenced by the unique properties of bismuth-based materials. Bismuth telluride (Bi2Te3), for example, is a semiconductor with a very small band gap and excellent thermoelectric properties which show one of the highest thermal to electrical energy conversion efﬁciency at room temperature. Moreover, bismuth telluride belongs to a new class of materials called Topological Insulators (TI), which exhibit surface conductivity with spin-momentum-locked electronic surface states while being bulk insulators. Both properties promise many application possibilities in electronic and spintronic devices with regards to energy efﬁciency and faster computing. The experimental investigation of the special topological insulator characteristics is very challenging, because the bulk conductivity dominates the electrical signal resulting in hardly accessible surface states. In order to overcome this challenge, the present dissertation initially presents the fabrication of Bi2Te3 nanowires with extremely large surface-to-volume ratio and independently controllable geometric, crystallographic and morphologic properties that enable a resolution of the surface states. The Bi2Te3 nanowires were synthesized by electrodeposition in ion-track etched polymer templates. For this purpose, 30-µm thick polycarbonate foils were irradiated by highly energetic heavy ions. Each ion creates an ion track, which can be converted into cylindrical nanopores by selective chemical etching. Subsequent electrochemical deposition within these nanopores resulted in nanowires with diameters between 25 and 100 nm. X-ray diffraction and transmission electron microscopy reveals highly textured nanowires consisting of single crystalline sections that are several hundreds of nanometers long. For both, bulk and surface, the chemical composition was analyzed by energy-dispersive x-ray spectroscopy and x-ray photoemission spectroscopy. The former shows a chemically homogeneous composition close to stoichiometry, while the latter revealed oxide and carbon contaminations, which is attributed to polymer residues from the template. Investigations of the electronic properties of individual Bi2Te3 nanowires were performed using nano-angle-resolved photoemission spectroscopy (nano-ARPES) at the French synchrotron SOLEIL. Sections of single nanowires were analyzed by employing a setup that was especially developed to obtain photoemission signals from individual nanoobjects. Angle-integrated measurements along the length of the nanowire recording the core levels, conﬁrmed the homogeneous chemical composition. Employing the angle-resolved mode, the valence band structure of single nanowires sections was successfully revealed. First principles calculations of the preferably deposited crystallographic orientation are in good agreement with the experimental nano-ARPES results. In order to conduct electrical transport measurements, individual nanowires were contacted by laser and electron beam lithography. The resistivity recorded as a function of temperature exhibits typical metallic behavior and increases with decreasing wire diameter. Magnetotransport investigations for different nanowire diameters were successfully performed by applying pulsed (up to 60 T) or static (up to 12 T) magnetic ﬁelds perpendicular and parallel to the wire axis. Generally, the magnetoresistance was found to be positive, increasing either linearly or quadratically with the magnetic ﬁeld and shows no saturation. At low temperatures and within the zero-magnetic-ﬁeld regime, the appearance of weak antilocalization effects indicates the presence of quantum interference caused by large spin-orbit coupling. The obtained results provide ﬁrst signs of quantum phenomena in electrochemically deposited Bi2Te3 nanowires. The presented successful investigation of electrodeposited Bi2Te3 nanowires by nano-ARPES and magnetotransport measurements opens new possibilities that are of great importance for future investigations of the electrical transport characteristics of topological insulators nanostructures. The developed experimental methods lay the groundwork to pursue these studies as a function of various nanowire properties such as diameter, crystallographic structure and grain boundaries. This knowledge combined with the easy and controlled fabrication of the unique nanowire samples employed here, promises many applications as innovative electronic and spintronic devices.

Nanoscale Probing of Local Electrical Characteristics on MBE-Grown Bi₂Te₃ Surfaces under Ambient Conditions

Characterization of individual Bi2Te3 nanowires electrodeposited in etched ion-track membranes for nano-ARPES and electrical transport studies

Nanoscale mapping of edge-state conductivity and charge-trap activity in topological insulators

Surface-bulk Coupling in a Bi2Te3 Nanoplate Grown by Van Der Waals Epitaxy.

Scanning Probe Microscopy Induced Surface Modifications of the Topological Insulator Bi2Te3 in Different Environments

Quantum Transport and Nano Angle-resolved Photoemission Spectroscopy on the Topological Surface States of Single Sb2Te3 Nanowires

Enhancement in surface mobility and quantum transport of Bi2-xSbxTe3-ySey topological insulator by controlling the crystal growth conditions

Surface-bulk coupling in a Bi$_2$Te$_3$ nanoplate grown by van der Waals epitaxy

Annealing-Induced Bi Bilayer on Bi2Te3 Investigated Via Quasi-Particle-Interference Mapping

Intrinsic conduction through topological surface states of insulating Bi2Te3 epitaxial thin films

Enhancement in surface mobility and quantum transport of Bi_(2-x)Sb_(x)Te_(3-y)Se_(y) topological insulator by controlling the crystal growth conditions

Raman Characterization and Transport Properties of Morphology-Dependent Two-Dimensional Bi2Te3 Nanofilms

Electron transport in stepped Bi2Se3 thin films

Identifying Native Point Defects in the Topological Insulator Bi2Te3.

Thickness-dependent electronic transport induced by in situ transformation of point defects in MBE-grown Bi 2 Te 3 thin films

Identifying Native Point Defects in the Topological Insulator Bi 2 Te 3

Intrinsic Ultrathin Topological Insulators Grown via MBE Characterized by in-situ Angle Resolved Photoemission Spectroscopy

In Situ Monitoring of Resistivity and Carrier Concentration During Molecular Beam Epitaxy of Topological Insulator Bi2Se3

Unoccupied Topological Surface State in Bi2te2se

Direct Observation of the Epitaxial Growth of Bismuth Telluride Topological Insulators from One-Dimensional Heterostructured Nanowires

Interface Effect in Nb-Bi2Te3 Hybrid Structure